Field-effect transistor and manufacture thereof

Abstract

Abstract PURPOSE:To shorten a switching time by attaching a metal or a metallic compound forming an ohmic contact with a diffusion region as a source electrode and a Schottky contact with a substrate as a drain electrode. CONSTITUTION:P type Si diffusion layers 2 for shaping channels and N type Si diffusion layers as source electrodes in the layers 2 are formed to an N type Si substrate 1 as a drain electrode. An SiO2 film 5 and a polycrystalline Si film 4 as a gate electrode are shaped extending over the substrate 1, the layers 2 and the layers 3 on the substrate 1. Silicide layers 10 are formed extending over the substrate 1, the layers 2 and the layers 3 where separate from the film 4, and the layers 10 shape ohmic contacts with the layers 3 and Schottky contacts with the substrate 1. Accordingly, when potential on the substrate 1 side is brought to a negative value to the layer 3 side, the forward rise voltage of a Schottky junction is made smaller than that of a P-N junction, thus concentrating currents flowing through the drain electrode from the layer 10 to the Schottky junction, then shortening a switching time.

Inventors

• 👤 Akio Shimano
• 👤 嶋野　彰夫
• 👤 Daisuke Ueda
• 👤 大助 上田

Bibliographic Details