Patent US6797340B2 successfully refreshed from Google Patents.
US6797340B2
Expired / Lapsed
US
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Method for depositing refractory metal layers employing sequential deposition techniques
Assignee: Applied Materials Inc
•
Filing: 2002-10-10
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Granted: 2004-09-28
•
Expires: 2022-10-10
Abstract
Abstract A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiCl 2 H 2 ), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
Inventors
- 👤 Hongbin Fang
- 👤 Hyung-Suk A. Yoon
- 👤 Ken Kaung Lai
- 👤 Chi Chung Young
- 👤 James Horng
- 👤 Ming Xi
- 👤 Michael X. Yang
- 👤 Hua Chung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:23
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/06; C23C16/02; C23C16/0209; C23C16/0218; C23C16/0272; C23C16/0281; C23C16/04; C23C16/045; C23C16/08; C23C16/16; C23C16/45523; C23C16/45525
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
74 words
A method for forming a tungsten layer on a substrate surface, comprising: positioning the substrate surface in a processing chamber; exposing the substrate surface to a boride; and depositing a nucleation layer in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiCl 2 H 2 ), derivatives thereof, and combinations thereof.
Claim 2
Independent Claim
74 words
A method for forming a tungsten layer on a substrate surface, comprising: positioning the substrate surface in a processing chamber; exposing the substrate surface to a boride; and depositing a nucleation layer in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiCl 2 H 2 ), derivatives thereof, and combinations thereof.
Claim 3
Dependent Claim
19 words
The method of claim 1 , wherein the nucleation layer is deposited by alternately pulsing tungsten hexafluoride and silane.
Claim 4
Dependent Claim
17 words
The method of claim 1 , wherein the nucleation layer has a thickness of about 100 angstroms.
Claim 5
Dependent Claim
28 words
The method of claim 1 , wherein the tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl (W(CO) 6 ), and a combination thereof.
Claim 6
Dependent Claim
74 words
The method of claim 1 , wherein the boride comprises borane (BH 3 , diborane (B 2 H 6 ), triborane (B 3 H 9 ), tetraborane (B 4 H 12 ), pentaborane (B 5 H 15 ), hexaborane (B 6 H 18 ), heptaborane (B 7 H 21 ), octaborane (B 8 H 24 ), nanoborane (B 9 H 27 ) and decaborane (B 10 H 30 ), derivatives thereof, and combinations thereof.
Claim 7
Dependent Claim
31 words
The method of claim 1 , wherein exposing the substrate surface to a boride occurs at processing conditions of the nucleation layer deposition and lasts for about 30 seconds or less.
Claim 8
Dependent Claim
29 words
The method of claim 1 , further comprising forming a bulk tungsten deposition film on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
Claim 9
Dependent Claim
19 words
The method of claim 1 , wherein the nucleation layer is deposited by alternately pulsing tungsten hexafluoride and silane.
Claim 10
Dependent Claim
31 words
The method of claim 1 , wherein exposing the substrate surface to a boride occurs at processing conditions of the nucleation layer deposition and lasts for about 30 seconds or less.
Claim 11
Dependent Claim
13 words
The method of claim 1 , wherein the substrate surface comprises titanium nitride.
Claim 12
Independent Claim
71 words
A method for forming a tungsten layer on a substrate surface, comprising: exposing a substrate surface comprising titanium nitride to diborane for less than 30 seconds at about 1 to about 5 Torr and between about 300° C. and about 350° C.; depositing a nucleation layer by alternately pulsing a tungsten-containing compound and silane gas at the same process conditions; and forming a bulk tungsten deposition film on the nucleation layer.
Claim 13
Independent Claim
71 words
A method for forming a tungsten layer on a substrate surface, comprising: exposing a substrate surface comprising titanium nitride to diborane for less than 30 seconds at about 1 to about 5 Torr and between about 300° C. and about 350° C.; depositing a nucleation layer by alternately pulsing a tungsten-containing compound and silane gas at the same process conditions; and forming a bulk tungsten deposition film on the nucleation layer.
Claim 14
Dependent Claim
23 words
The method of claim 11 , wherein exposing the substrate surface to diborane and depositing the nucleation layer occurs in the same chamber.
Claim 15
Dependent Claim
21 words
The method of claim 11 , wherein the nucleation layer has a thickness between about 10 angstroms and about 200 angstroms.
Claim 16
Dependent Claim
23 words
The method of claim 11 , wherein the bulk tungsten deposition film has a thickness between about 1,000 angstroms and about 2500 angstroms.
Claim 17
Independent Claim
56 words
A method for forming a tungsten layer on a substrate surface, comprising: positioning the substrate surface in a processing chamber; exposing the substrate surface to a boride; depositing a nucleation layer in the same processing chamber by alternately pulsing a tungsten-containing compound and silane gas; and forming a bulk tungsten deposition film on the nucleation layer.
Claim 18
Independent Claim
56 words
A method for forming a tungsten layer on a substrate surface, comprising: positioning the substrate surface in a processing chamber; exposing the substrate surface to a boride; depositing a nucleation layer in the same processing chamber by alternately pulsing a tungsten-containing compound and silane gas; and forming a bulk tungsten deposition film on the nucleation layer.
Claim 19
Dependent Claim
21 words
The method of claim 15 , wherein the nucleation layer has a thickness between about 10 angstroms and about 200 angstroms.
Claim 20
Dependent Claim
23 words
The method of claim 15 , wherein the bulk tungsten deposition film has a thickness between about 1,000 angstroms and about 2500 angstroms.
Claim 21
Dependent Claim
28 words
The method of claim 15 , wherein the tungsten-containing compound is selected from the group consisting of tungsten hexafluoride, tungsten hexacarbonyl (W(CO) 6 ), and a combination thereof.
Claim 22
Dependent Claim
74 words
The method of claim 15 , wherein the boride comprises borane (BH 3 ), diborane (B 2 H 6 ), triborane (B 3 H 9 ), tetraborane (B 4 H 12 ), pentaborane (B 5 H 15 ), hexaborane (B 6 H 18 ), heptaborane (B 7 H 21 ), octaborane (B 8 H 24 ), nanoborane (B 9 H 27 ) and decaborane (B 10 H 30 ), derivatives thereof, and combinations thereof.
Claim 23
Dependent Claim
31 words
The method of claim 15 , wherein exposing the substrate surface to a boride occurs at processing conditions of the nucleation layer deposition and lasts for about 30 seconds or less.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-09-28 | 2008-03-29 | 2008-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-09-28 | 2012-03-29 | 2012-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-09-28 | 2016-03-29 | 2016-09-28 | $7700.00 | Window Closed / Lapsed |