US6399491B2
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Method of manufacturing a barrier metal layer using atomic layer deposition
Assignee: Samsung Electronics Co Ltd
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Filing: 2001-04-06
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Granted: 2002-06-04
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Expires: 2021-04-06
Abstract
Abstract A method of manufacturing a barrier metal layer uses atomic layer deposition (ALD) as the mechanism for depositing the barrier metal. The method includes supplying a first source gas onto the entire surface of a semiconductor substrate in the form of a pulse, and supplying a second source gas, which reacts with the first source gas, onto the entire surface of the semiconductor substrate in the form of a pulse. In a first embodiment, the pulses overlap in time so that the second source gas reacts with part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form part of the barrier metal layer by atomic layer deposition. Thus, the deposition rate is greater than if the barrier metal layer were only formed by ALD. In the second embodiment, an impurity-removing gas is used to remove impurities in the barrier metal layer. Thus, even if the gas supply scheme is set up to only use ALD in creating the barrier metal layer, the deposition rate can be increased without the usual accompanying increase in the impurity content of the barrier metal layer.
Inventors
- 👤 In-Sang Jeon
- 👤 Sang-Bom Kang
- 👤 Hyun-Seok Lim
- 👤 Gil-heyun Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/038
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
232 words
A method of manufacturing a barrier metal layer, comprising the steps of: loading a semiconductor substrate into a processing chamber; supplying a first source gas, containing a metal, onto the entire surface of the semiconductor substrate in the form of a pulse having a duration lasting from a point in time A 1 to a point in time A 2 , whereby the first source gas is chemically and physically adsorbed at the surface of the semiconductor device; and supplying a second source gas, that is reactive with the first source gas to form the barrier metal, onto the entire surface of the semiconductor substrate in the form of a pulse having a duration lasting from a point in time A 3 to a point in time A 4 , wherein said point in time A 3 is no earlier than said point in time A 1 and no later than said point in time A 2 , whereby one portion of the second source gas reacts with that part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with that part of the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form the barrier metal layer by atomic layer deposition.
Claim 2
Independent Claim
232 words
A method of manufacturing a barrier metal layer, comprising the steps of: loading a semiconductor substrate into a processing chamber; supplying a first source gas, containing a metal, onto the entire surface of the semiconductor substrate in the form of a pulse having a duration lasting from a point in time A 1 to a point in time A 2 , whereby the first source gas is chemically and physically adsorbed at the surface of the semiconductor device; and supplying a second source gas, that is reactive with the first source gas to form the barrier metal, onto the entire surface of the semiconductor substrate in the form of a pulse having a duration lasting from a point in time A 3 to a point in time A 4 , wherein said point in time A 3 is no earlier than said point in time A 1 and no later than said point in time A 2 , whereby one portion of the second source gas reacts with that part of the first source gas physically adsorbed at the surface of the semiconductor substrate to thereby form the barrier metal layer by chemical vapor deposition whereas another part of the second source gas reacts with that part of the first source gas chemically adsorbed at the surface of the semiconductor substrate to thereby form the barrier metal layer by atomic layer deposition.
Claim 3
Dependent Claim
26 words
The method of claim 1 , wherein said point in time A 4 is no later in time than said point in time A 2 .
Claim 4
Dependent Claim
39 words
The method of claim 1 , and further comprising supplying a purge gas onto the entire surface of the semiconductor substrate beginning at a point in time that is no later than said point in time A 1 .
Claim 5
Dependent Claim
48 words
The method of claim 1 , and further comprising supplying a purge gas onto the entire surface of the semiconductor substrate beginning at a point in time that is later than said point in time A 1 and no later than said point in time A 3 .
Claim 6
Dependent Claim
29 words
The method of claim 1 , wherein the first source gas includes an element of the halogen family and a refractory metal, and the second source gas includes nitrogen.
Claim 7
Dependent Claim
45 words
The method of claim 1 , and further comprising supplying a purge gas onto the entire surface of the semiconductor substrate for period of time after said point in time A 4 to discharge by-products of the reaction between the first and second source gases.
Claim 8
Dependent Claim
56 words
The method of claim 6 , wherein said steps of supplying the first source gas in the form of a pulse, supplying the second source gas in the form of a pulse, and supplying the purge gas for a period of time are repeated at least once to increase the thickness of the barrier metal layer.
Claim 9
Dependent Claim
89 words
The method of claim 1 , wherein the reaction of the first and second source gases produces an impurity trapped in the barrier metal layer, and further comprising supplying a purge gas onto the entire surface of the semiconductor substrate, and supplying an impurity-removing gas, capable of reacting with the impurity, onto the entire surface of the semiconductor substrate for a period of time beginning after point in time A 4 and while the purge gas is being supplied, in order to remove impurities from the barrier metal layer.
Claim 10
Dependent Claim
14 words
The method of claim 8 , wherein the impurity removing-gas is NH 3 .
Claim 11
Dependent Claim
51 words
The method of claim 8 , wherein said steps of supplying the first source gas in the form of a pulse, supplying the second source gas in the form of a pulse, and supplying the impurity-removing gas are repeated at least once to increase the thickness of the barrier metal layer.
Claim 12
Dependent Claim
38 words
The method of claim 1 , wherein said point in time A 1 coincides with said point in time A 3 , and said point in time A 2 coincides with said point in time A 4 .
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2005-06-03 | 2005-12-03 | 2006-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-03 | 2009-12-03 | 2010-06-04 | $3760.00 | Window Closed / Lapsed |
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