US6653209B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
Assignee: Canon Inc
•
Filing: 2000-09-28
•
Granted: 2003-11-25
•
Expires: 2020-09-28
Abstract
Abstract To decrease the thickness of a silicon thin film to a desired value without deterioration of the quality thereof while avoiding the surface roughness due to speed increasing oxidation of crystal defect portions occurring when conducting the conventional sacrificial oxidation, effect of dust particles, etc. and also avoiding deterioration of high pressure resistance of the oxide film associated with the surface roughness. A silicon ultrathin film SOI layer is produced in the following two steps: preparing a SOI wafer having a silicon thin film, which exhibits less precipitation of oxygen, thereon by the SIMOX method or the semiconductor bonding method, and cleaning the SOI wafer with an alkali solution such as SC1 and TMAH, so as to utilize the etching action of the aqueous cleaner.
Inventors
- 👤 Kenji Yamagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:24
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P70/00; H10P70/10; H10P70/15; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P90/1924; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
66 words
A method for producing a silicon thin film provided on an insulating surface, which comprises the steps of: preparing the silicon thin film at a thickness larger than 100 nm on the insulating surface; heat-treating the silicon thin film in a reducing atmosphere containing hydrogen; and wet-cleaning the heat-treated silicon thin film to decrease the thickness of the silicon thin film to 100 nm or less.
Claim 2
Independent Claim
66 words
A method for producing a silicon thin film provided on an insulating surface, which comprises the steps of: preparing the silicon thin film at a thickness larger than 100 nm on the insulating surface; heat-treating the silicon thin film in a reducing atmosphere containing hydrogen; and wet-cleaning the heat-treated silicon thin film to decrease the thickness of the silicon thin film to 100 nm or less.
Claim 3
Dependent Claim
31 words
The method for producing a silicon thin film according to claim 1 , wherein the thickness of the silicon thin film is decreased to 50 nm or smaller by the wet-cleaning.
Claim 4
Dependent Claim
25 words
The method for producing a silicon thin film according to claim 1 , wherein the silicon thin film is prepared from an epitaxially grown film.
Claim 5
Dependent Claim
25 words
The method for producing a silicon thin film according to claim 1 , wherein the silicon thin film is prepared from a hydrogen annealed silicon.
Claim 6
Dependent Claim
25 words
The method for producing a silicon thin film according to claim 1 , wherein the silicon thin film is prepared from a FZ silicon wafer.
Claim 7
Dependent Claim
28 words
The method for producing a silicon thin film according to claim 1 , wherein the wet-cleaning is performed using an SC1 aqueous cleaner or an organic alkali solution.
Claim 8
Dependent Claim
30 words
The method for producing a silicon thin film according to claim 1 , wherein the etch rate by the wet-cleaning is 0.1 nm/min or higher and 10 nm/min or lower.
Claim 9
Dependent Claim
30 words
The method for producing a silicon thin film according to claim 1 , wherein the silicon thin film is subjected to the wet-cleaning treatment without being subjected to thermal oxidation.
Claim 10
Dependent Claim
35 words
The method for producing a silicon thin film according to claim 1 , wherein the silicon thin film comprises a silicon thin film in which oxygen content is lower than that of a CZ wafer.
Claim 11
Dependent Claim
26 words
The method for producing a silicon thin film according to claim 1 , wherein the wet-cleaning is performed using a cleaner containing ammonia and hydrogen peroxide.
Claim 12
Independent Claim
60 words
A method for fabricating a SOI substrate which comprises the steps of: preparing a substrate having a silicon thin film larger than 100 nm in thickness on an insulating surface; heat-treating said substrate in a reducing atmosphere containing hydrogen; and wet-cleaning the heat-treated substrate so as to decrease the thickness of said silicon thin film to 100 nm or less.
Claim 13
Independent Claim
60 words
A method for fabricating a SOI substrate which comprises the steps of: preparing a substrate having a silicon thin film larger than 100 nm in thickness on an insulating surface; heat-treating said substrate in a reducing atmosphere containing hydrogen; and wet-cleaning the heat-treated substrate so as to decrease the thickness of said silicon thin film to 100 nm or less.
Claim 14
Dependent Claim
62 words
The method for fabricating a SOI substrate according to claim 11 , wherein the substrate is prepared by a process which comprises the steps of: forming a composite member by bonding a first substrate comprising a porous layer and a silicon thin film formed thereon to a second substrate via an insulating layer; and separating said composite member by the porous layer.
Claim 15
Dependent Claim
64 words
The method for fabricating a SOI substrate according to claim 11 , wherein the substrate is prepared by a process comprising the steps of: forming a composite member by bonding a first substrate, which comprises an ion implanted layer and a silicon thin film formed thereon, to a second substrate via an insulating layer; and separating said composite member at the ion implanted layer.
Claim 16
Dependent Claim
36 words
The method for fabricating a SOI substrate according to claim 13 , wherein the first substrate is formed by a process comprising a step of implanting hydrogen ions in the given regions of a silicon wafer.
Claim 17
Dependent Claim
32 words
The method for fabricating a SOI substrate according to claim 11 , wherein the substrate is prepared by a process which comprises the step of implanting oxygen ions into a silicon wafer.
Claim 18
Dependent Claim
30 words
The method for fabricating a SOI substrate according to claim 11 , wherein the thickness of the silicon thin film is decreased to 50 mn or smaller by the wet-cleaning.
Claim 19
Dependent Claim
27 words
A method for producing a semiconductor device comprising a step of forming an active region of transistor in the silicon thin film according to claim 11 .
References Cited (Backward Citations)
JPH0521338A
Cited
US5371037A
Cited
US5750000A
Cited
US5767020A
Cited
US5374564A
Cited
US6121117A
Cited
US5869387A
Cited
JPH05218053A
Cited
EP0553859A2
Cited
US5980633A
Cited
US5856229A
Cited
JPH07302889A
Cited
US6008110A
Cited
US5863830A
Cited
JPH09100197A
Cited
US6136684A
Cited
US6350702B2
Cited
EP0843344A1
Cited
EP0867917A2
Cited
WO1998052216A1
Cited
US6380099B2
Cited
US20020109144A1
Cited
EP0975012A2
Cited
US6180497B1
Cited
US6066529A
Cited
US6433615B2
Cited
US6410436B2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-11-24 | 2007-05-26 | 2007-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-11-24 | 2011-05-26 | 2011-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-11-24 | 2015-05-26 | 2015-11-25 | $7700.00 | Window Closed / Lapsed |