Abstract SOI substrates are fabricated with sufficient quality and with good reproducibility. At the same time, conservation of resources and reduction of cost are realized by reuse of the wafer and the like.Carried out to achieve the above are a step of bonding a principal surface of a first substrate to a principal surface of a second substrate, the first substrate being a Si substrate in which at least one layer of non-porous thin film is formed through a porous Si layer, a step of exposing the porous Si layer in a side surface of a bonding substrate comprised of the first substrate and the second substrate, a step of dividing the porous Si layer by oxidizing the bonding substrate, and a step of removing the porous Si and oxidized porous Si layer on the second substrate separated by the division of the porous Si layer.
A process for fabricating a semiconductor film comprising the steps of: preparing a first member having at least one non-porous semiconductor layer on an ion-implanted layer; forming a bonding structure by bonding said first member to a second member such that said non-porous semiconductor layer is located inside a laminate comprised of these members; separating said bonding structure at said ion-implanted layer; and heat-treating said non-porous semiconductor layer thereby transferred onto the second member in an atmosphere containing hydrogen, after the separating step.
Claim 2
Dependent Claim
83 words
A process for fabricating a semiconductor film comprising the steps of: preparing a first member having at least one non-porous semiconductor layer on an ion-implanted layer; forming a bonding structure by bonding said first member to a second member such that said non-porous semiconductor layer is located inside a laminate comprised of these members; separating said bonding structure at said ion-implanted layer; and heat-treating said non-porous semiconductor layer thereby transferred onto the second member in an atmosphere containing hydrogen, after the separating step.
Claim 3
Dependent Claim
34 words
The process according to claim 1 , wherein said ion-implanted layer is formed by ion-implanting at least one element selected from the group consisting of rare gases, hydrogen and nitrogen into a silicon region.
Claim 4
Dependent Claim
50 words
The process according to claim 1 , wherein said first member is formed by ion-implanting hydrogen ions into a substrate having a silicon oxide layer on a surface of a single crystal silicon region, wherein said ions are implanted from the direction of the side of the silicon oxide layer.
Claim 5
Dependent Claim
37 words
The process according to claim 1 , wherein a silicon oxide layer is formed on each of said first and second members, and said bonding structure is formed by bonding the silicon oxide layers to each other.