US5371037A
Expired / Lapsed
US
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Semiconductor member and process for preparing semiconductor member
Assignee: Canon Inc
•
Filing: 1991-08-05
•
Granted: 1994-12-06
•
Expires: 2011-08-05
Abstract
Abstract A process for preparing a semiconductor member by forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the insulating surface of a member to the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.
Inventors
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 04:17
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10P90/1914; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
66 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and then removing said porous semiconductor region by etching.
Claim 2
Dependent Claim
66 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and then removing said porous semiconductor region by etching.
Claim 3
Dependent Claim
85 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of the region constituted of said insulating substance, and removing said porous semiconductor region by etching.
Claim 4
Dependent Claim
85 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of the region constituted of said insulating substance, and removing said porous semiconductor region by etching.
Claim 5
Dependent Claim
79 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and removing said porous semiconductor region by etching.
Claim 6
Dependent Claim
79 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and removing said porous semiconductor region by etching.
Claim 7
Dependent Claim
96 words
A process of preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure, forming a region constituted of an insulating substance on said non-porous monocrystalline semiconductor region side, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and removing said porous semiconductor region by etching.
Claim 8
Dependent Claim
96 words
A process of preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure, forming a region constituted of an insulating substance on said non-porous monocrystalline semiconductor region side, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and removing said porous semiconductor region by etching.
Claim 9
Dependent Claim
100 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, an removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
Claim 10
Dependent Claim
100 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, an removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
Claim 11
Dependent Claim
117 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region. forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
Claim 12
Dependent Claim
117 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region. forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side, bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
Claim 13
Dependent Claim
86 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said second monocrystalline semiconductor region, and removing said porous semiconductor region by etching.
Claim 14
Dependent Claim
86 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said second monocrystalline semiconductor region, and removing said porous semiconductor region by etching.
Claim 15
Dependent Claim
103 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side, bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said region constituted of an insulating substance, and removing said porous semiconductor region by etching.
Claim 16
Dependent Claim
103 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side, bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said region constituted of an insulating substance, and removing said porous semiconductor region by etching.
Claim 17
Dependent Claim
25 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said monocrystalline semiconductor comprises silicon.
Claim 18
Dependent Claim
30 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said porous semiconductor region maintaining the monocrystalline structure is P-type.
Claim 19
Dependent Claim
33 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 20
Dependent Claim
31 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said bonding step is carried out in an atmosphere containing nitrogen.
Claim 21
Dependent Claim
32 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 22
Dependent Claim
30 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 23
Dependent Claim
60 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 24
Dependent Claim
40 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said porous semiconductor region maintaining a monocrystalline structure is formed by making the non-porous monocrystalline semiconductor region porous by anodization.
Claim 25
Dependent Claim
21 words
A process for preparing a semiconductor member according to claim 16, wherein said anodization is carried out in an HF solution.
Claim 26
Dependent Claim
21 words
A process for preparing a semiconductor member according to claim 9, wherein said non-porous monocrystalline semiconductor region is intrinsic or N-type.
Claim 27
Dependent Claim
23 words
A process for preparing a semiconductor member according to claim 18, wherein said N-type silicon is formed by proton irradiation or epitaxial growth.
Claim 28
Dependent Claim
36 words
A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.
Claim 29
Dependent Claim
38 words
A process for preparing a semiconductor member according to claim 1, 2, 3, 4, 5, 6, 7, or 8, having the surface constituted of an insulating substance wherein said member is a silicon substrate with an oxidized surface.
Claim 30
Dependent Claim
41 words
A process for preparing a semiconductor member according to claims 1 or 2, wherein etching of said porous semiconductor region maintaining the monocrystalline structure is carried out such that the members bonded to each other are covered with an anti-etching material.
Claim 31
Dependent Claim
18 words
A process for preparing a semiconductor member according to claim 22, wherein said anti-etching material is silicon nitride.
Claim 32
Dependent Claim
18 words
A process for preparing a semiconductor member according to claim 22, wherein said anti-etching material is Apiezon Wax.
Claim 33
Dependent Claim
57 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and then removing said porous semiconductor region by etching.
Claim 34
Dependent Claim
57 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and then removing said porous semiconductor region by etching.
Claim 35
Dependent Claim
74 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor on a porous semiconductor, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then bonding the surface of another member onto the surface of the region constituted of said insulating substance, and removing said porous semiconductor region by etching.
Claim 36
Dependent Claim
74 words
A process for preparing a semiconductor member comprising the steps of: forming a member having a non-porous monocrystalline semiconductor on a porous semiconductor, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then bonding the surface of another member onto the surface of the region constituted of said insulating substance, and removing said porous semiconductor region by etching.
Claim 37
Dependent Claim
70 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and removing said porous semiconductor region by etching
Claim 38
Dependent Claim
70 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and removing said porous semiconductor region by etching
Claim 39
Dependent Claim
72 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said region constituted of an insulating substance, and removing said porous semiconductor region by etching.
Claim 40
Dependent Claim
72 words
A process for preparing a semiconductor member comprising the steps of: making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said region constituted of an insulating substance, and removing said porous semiconductor region by etching.
Claim 41
Dependent Claim
92 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said third non-porous monocrystalline semiconductor region, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing, and removing said porous semiconductor region by etching.
Claim 42
Dependent Claim
92 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said third non-porous monocrystalline semiconductor region, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing, and removing said porous semiconductor region by etching.
Claim 43
Dependent Claim
109 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure, forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side, bonding the surface of another member onto the surface of said region constituted on the insulating substance, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
Claim 44
Dependent Claim
109 words
A process for preparing a semiconductor member comprising the steps of: making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region, forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure, forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side, bonding the surface of another member onto the surface of said region constituted on the insulating substance, and removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.
Claim 45
Dependent Claim
77 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said second monocrystalline semiconductor region, and removing said porous semiconductor region by etching.
Claim 46
Dependent Claim
77 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, bonding the surface of another member onto the surface of said second monocrystalline semiconductor region, and removing said porous semiconductor region by etching.
Claim 47
Dependent Claim
94 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side, bonding the surface of another member onto the surface of said region constituted of an insulating substance, and removing said porous semiconductor region by etching.
Claim 48
Dependent Claim
94 words
A process for preparing a semiconductor member comprising the steps of: forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type, making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure, forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side, bonding the surface of another member onto the surface of said region constituted of an insulating substance, and removing said porous semiconductor region by etching.
Claim 49
Dependent Claim
26 words
A process for preparing a semiconductor member according to claim 20, wherein the member of which the surface is constituted of an insulating substance is glass.
Claim 50
Dependent Claim
26 words
A process for preparing a semiconductor member according to claim 20, wherein the member of which the surface is constituted of an insulating substance is quartz.
Claim 51
Dependent Claim
25 words
A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said monocrystalline semiconductor comprises silicon.
Claim 52
Dependent Claim
30 words
A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32 wherein said porous semiconductor region maintaining the monocrystalline structure is P-type.
Claim 53
Dependent Claim
33 words
A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 54
Dependent Claim
31 words
A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said bonding step in carried out in an atmosphere containing nitrogen.
Claim 55
Dependent Claim
32 words
A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.
Claim 56
Dependent Claim
30 words
A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 57
Dependent Claim
60 words
A process for preparing a semiconductor member according to claim 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.
Claim 58
Dependent Claim
37 words
A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region is obtained by making the non-porous monocrystalline porous region porous by anodization.
Claim 59
Dependent Claim
27 words
A process for preparing a semiconductor member according to claim 25, 26, 27, 28, 29, 30, 31 or 32, wherein said another member comprises a light-transmissive material.
Claim 60
Dependent Claim
41 words
A process for preparing a semiconductor member according to claims 25 or 26, wherein etching of said porous semiconductor region maintaining the monocrystalline structure is carried out such that the members bonded to each other are covered with an anti-etching material.
Claim 61
Dependent Claim
17 words
A process for preparing a semiconductor member according to claim 43, wherein said another member is glass.
Claim 62
Dependent Claim
18 words
A process for preparing a semiconductor member according to claim 43, wherein said another member is quartz glass.
Claim 63
Dependent Claim
22 words
A semiconductor member obtained by a process according to any one of claim 1, 2, 3, 4, 5, 6, 7 or 8.
Claim 64
Dependent Claim
22 words
A semiconductor member obtained by a process according to any one of claims 25, 26, 27, 28, 29, 30, 31 or 32.
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