US5811348A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for separating a device-forming layer from a base body
Assignee: Sony Corp
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Filing: 1996-02-01
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Granted: 1998-09-22
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Expires: 2016-02-01
Abstract
Abstract A porous Si layer is formed on a single-crystal Si substrate, and then a p+-type Si layer, p-type Si layer and n+-type Si layer which all make up a solar cell layer. After a protective film is made on the n+-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Then, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.
Inventors
- 👤 Takeshi Matsushita
- 👤 Hiroshi Tayanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:11
CPC Classifications
H; H10; H10P; H10P95/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/174; H10F19/00; H10F19/80; H10F71/00; H10F71/121; H10F71/139; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; H10P14/38; H10P90/1924; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
73 words
A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate by an anodic oxidization; forming at least one semiconductor layer on said porous layer; and separating said semiconductor layer from said substrate by forming a mechanical rupture in said porous layer or along an interface formed between the porous layer and the substrate or between the porous layer and the semiconductor layer.
Claim 2
Independent Claim
73 words
A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate by an anodic oxidization; forming at least one semiconductor layer on said porous layer; and separating said semiconductor layer from said substrate by forming a mechanical rupture in said porous layer or along an interface formed between the porous layer and the substrate or between the porous layer and the semiconductor layer.
Claim 3
Dependent Claim
21 words
A method for separating a semiconductor layer from a substrate according to claim 1, wherein said substrate is a Si substrate.
Claim 4
Dependent Claim
23 words
A method for separating a semiconductor layer from a substrate according to claim 1, wherein said porous layer is a Si porous layer.
Claim 5
Dependent Claim
31 words
A method for separating a semiconductor layer from a substrate according to claim 1, wherein the method further comprises a step of oxidizing said porous layer after forming said porous layer.
Claim 6
Dependent Claim
29 words
A method for separating a semiconductor layer from a substrate according to claim 4, wherein said porous layer is oxidized at a temperature of 400° C. to 600° C.
Claim 7
Dependent Claim
33 words
A method for separating a semiconductor layer from a substrate according to claim 1, wherein the method further comprises a step of H 2 -annealing said porous layer after forming said porous layer.
Claim 8
Dependent Claim
31 words
A method for separating a semiconductor layer from a substrate according to claim 6, wherein said porous layer is H 2 -annealed at a temperature of 950° C. to 1000° C.
Claim 9
Dependent Claim
61 words
A method for separating a semiconductor layer from a substrate according to claim 1, wherein the method further comprises the steps of: forming a oxide film on a entire surface of said semiconductor layer, said porous layer and said substrate; and removing said oxide film to form a wedge-shaped gap in an interface between said porous layer and said semiconductor layer.
Claim 10
Independent Claim
74 words
A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate; H 2 -annealing said porous layer; forming at least one semiconductor layer on said porous layer; separating said semiconductor layer from said substrate by forming a mechanical rupture within said porous layer or along an interface formed between the substrate and the porous layer or between the porous layer and said semiconductor layer.
Claim 11
Independent Claim
74 words
A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate; H 2 -annealing said porous layer; forming at least one semiconductor layer on said porous layer; separating said semiconductor layer from said substrate by forming a mechanical rupture within said porous layer or along an interface formed between the substrate and the porous layer or between the porous layer and said semiconductor layer.
Claim 12
Independent Claim
72 words
A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate; oxidizing said porous layer; forming at least one semiconductor layer on said porous layer; separating said semiconductor layer from said substrate by forming a mechanical rupture within said porous layer or along an interface formed between the substrate and the porous layer or between the porous layer and said semiconductor layer.
Claim 13
Independent Claim
72 words
A method for separating a semiconductor layer from a substrate, comprising: forming a porous layer on a surface of a substrate; oxidizing said porous layer; forming at least one semiconductor layer on said porous layer; separating said semiconductor layer from said substrate by forming a mechanical rupture within said porous layer or along an interface formed between the substrate and the porous layer or between the porous layer and said semiconductor layer.
Claim 14
Independent Claim
75 words
A method for manufacturing a solar cell, comprising; forming a porous layer on a surface of a substrate by anodic oxidization; forming a plurality of semiconductor layers on said porous layer to form the solar cell; separating said plurality of semiconductor layers from said substrate by forming a mechanical rupture within said porous layer or along an interface formed between the substrate and the porous layer or between the porous layer and said semiconductor layer.
Claim 15
Independent Claim
75 words
A method for manufacturing a solar cell, comprising; forming a porous layer on a surface of a substrate by anodic oxidization; forming a plurality of semiconductor layers on said porous layer to form the solar cell; separating said plurality of semiconductor layers from said substrate by forming a mechanical rupture within said porous layer or along an interface formed between the substrate and the porous layer or between the porous layer and said semiconductor layer.
References Cited (Backward Citations)
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