EP0553859A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor substrate and process for producing the same
Assignee: Canon Inc
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Filing: 1993-01-29
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Granted: —
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Expires: 2013-01-29
Abstract
Abstract A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.
Inventors
- 👤 Nobuhiko C/O Canon Kabushiki Kaisha Sato
- 👤 Takao C/O Canon Kabushiki Kaisha Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 00:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P90/00; H10P90/12; H10P90/15; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/974; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
80 words
A process for producing a semiconductor substrate, comprising the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.
Claim 2
Dependent Claim
14 words
A process according to Claim 1, wherein the protective film is an oxide film.
Claim 3
Dependent Claim
15 words
A process according to Claim 2, wherein the oxide film is formed by thermal oxidation.
Claim 4
Dependent Claim
21 words
A process according to Claim 3, wherein the thermal oxidation is carried out at a temperature of from 400°C to 700°C.
Claim 5
Dependent Claim
21 words
A process according to Claim 3, wherein the oxide film is formed by immersing the porous layer in an oxidative solution.
Claim 6
Dependent Claim
23 words
A process according to Claim 3, wherein the oxide film is formed by immersing the porous layer in a solution containing hydrogen peroxide.
Claim 7
Dependent Claim
21 words
A semiconductor substrate prepared by the process for producing the semiconductor substrate according to any one of Claims 1 to 6.
References Cited (Backward Citations)
No citation records indexed.
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