Patent US6627260B2 successfully refreshed from Google Patents.
US6627260B2
Expired / Lapsed
US
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Deposition methods
Assignee: Micron Technology Inc
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Filing: 2002-09-30
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Granted: 2003-09-30
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Expires: 2022-09-30
Abstract
Abstract A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is contacted with a second initiation precursor different from the first initiation precursor and a second portion of the initiation layer is formed on the substrate. The substrate may be simultaneously contacted with a plurality of initiation precursors, forming on the substrate and initiation layer comprising components derived from each of the plurality of initiation precursors. An initiation layer may be contacted with a deposition precursor, forming a deposition layer on the initiation layer. The deposition layer may be contacted with a second initiation precursor different from the first initiation precursor forming a second initiation layer over the substrate. Also, a first initiation layer may be formed substantially selectively on a first-type substrate surface relative to a second-type substrate surface and contacted with a deposition precursor, forming a deposition layer substantially selectively over the first-type substrate surface.
Inventors
- 👤 Garo J. Derderian
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:12
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/04; C23C16/045; C23C16/22; C23C16/30; C23C16/40; C23C16/403; C23C16/45527; C23C16/45531; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; B; B05; B05D; B05D1/00; B05D1/18; B05D1/185; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
64 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on an insulative portion of the substrate; and contacting at least a part of the substrate with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on a conductive portion of the substrate.
Claim 2
Dependent Claim
64 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on an insulative portion of the substrate; and contacting at least a part of the substrate with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on a conductive portion of the substrate.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the initiation layer consists essentially of a monolayer of the first and second initiation precursors.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the contacting with the first initiation precursor and the contacting with the second initiation precursor occur simultaneously.
Claim 5
Dependent Claim
107 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate; contacting at least a part of the substrate with a second initiation precursor and forming a second portion of the initiation layer on the substrate; contacting the first and second portions of the initiation layer with a deposition precursor and forming a deposition layer on the first and second portions of the initiation layer; and contacting the deposition layer with a third initiation precursor different from both the first and second initiation precursor and forming a second initiation layer on the deposition layer.
Claim 6
Dependent Claim
107 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate; contacting at least a part of the substrate with a second initiation precursor and forming a second portion of the initiation layer on the substrate; contacting the first and second portions of the initiation layer with a deposition precursor and forming a deposition layer on the first and second portions of the initiation layer; and contacting the deposition layer with a third initiation precursor different from both the first and second initiation precursor and forming a second initiation layer on the deposition layer.
Claim 7
Dependent Claim
17 words
The method of claim 4 wherein the second initiation precursor is different from the first initiation precursor.
Claim 8
Dependent Claim
74 words
The method of claim 4 wherein: the substrate has a first region and second region, the first and second regions each having a property causing a difference between the susceptibility of the first and second regions to formation of the initiation layer by the first initiation precursor; forming the first portion comprises forming the initiation layer on the first region; and forming the second portion comprises forming the initiation layer on the second region.
Claim 9
Dependent Claim
71 words
A deposition method comprising: simultaneously contacting a substrate with a plurality of initiation precursors; chemisorbing on the substrate an initiation layer comprising components derived from each of the plurality of initiation precursors; and contacting the initiation layer with a deposition precursor and forming a deposition layer on one portion of the initiation layer derived from one initiation precursor and on another portion of the initiation layer derived from another initiation precursor.
Claim 10
Dependent Claim
71 words
A deposition method comprising: simultaneously contacting a substrate with a plurality of initiation precursors; chemisorbing on the substrate an initiation layer comprising components derived from each of the plurality of initiation precursors; and contacting the initiation layer with a deposition precursor and forming a deposition layer on one portion of the initiation layer derived from one initiation precursor and on another portion of the initiation layer derived from another initiation precursor.
Claim 11
Dependent Claim
14 words
The method of claim 7 wherein the initiation layer consists essentially of a monolayer.
Claim 12
Dependent Claim
98 words
A deposition method comprising: providing a substrate having a first region and second region, the first and second regions each having a property causing a difference between the susceptibility of the first and second regions to formation of an initiation layer by a first initiation precursor; contacting the substrate with the first initiation precursor and forming the initiation layer on the first region to consist essentially of a monolayer; and contacting at least a part of the substrate with a second initiation precursor and forming the initiation layer on the second region to consist essentially of a monolayer.
Claim 13
Dependent Claim
98 words
A deposition method comprising: providing a substrate having a first region and second region, the first and second regions each having a property causing a difference between the susceptibility of the first and second regions to formation of an initiation layer by a first initiation precursor; contacting the substrate with the first initiation precursor and forming the initiation layer on the first region to consist essentially of a monolayer; and contacting at least a part of the substrate with a second initiation precursor and forming the initiation layer on the second region to consist essentially of a monolayer.
Claim 14
Dependent Claim
21 words
The deposition method of claim 9 wherein the initiation layer consists essentially of a monolayer on the first and second region.
Claim 15
Dependent Claim
24 words
The deposition method of claim 9 wherein the contacting with the first initiation precursor and the contacting with the second initiation precursor occur simultaneously.
Claim 16
Dependent Claim
89 words
A deposition method comprising: providing a substrate having a first region and second region, the first and second regions each having a property causing a difference between the susceptibility of the first and second regions to formation of an initiation layer by a first initiation precursor; contacting the substrate with the first initiation precursor and forming the initiation layer on the first region; and simultaneous to contacting with the first initiation precursor, contacting the substrate with a second initiation precursor and forming the initiation layer on the second region.
Claim 17
Dependent Claim
89 words
A deposition method comprising: providing a substrate having a first region and second region, the first and second regions each having a property causing a difference between the susceptibility of the first and second regions to formation of an initiation layer by a first initiation precursor; contacting the substrate with the first initiation precursor and forming the initiation layer on the first region; and simultaneous to contacting with the first initiation precursor, contacting the substrate with a second initiation precursor and forming the initiation layer on the second region.
Claim 18
Dependent Claim
26 words
The method of claim 12 wherein the forming the initiation layer on the second region substantially fills holes in the initiation layer on the first region.
Claim 19
Dependent Claim
42 words
The method of claim 12 further comprising, simultaneous to contacting with the first initiation precursor, contacting the substrate with at least one additional initiation precursor and forming the initiation layer on at least one of the first region and the second region.
Claim 20
Dependent Claim
27 words
The method of claim 14 wherein the forming the initiation layer on the second region substantially fills holes in the initiation layer formed on the first region.
Claim 21
Dependent Claim
35 words
The method of claim 12 wherein forming the initiation layer on the first region comprises chemisorbing the first initiation precursor and forming the initiation layer on the second region comprises chemisorbing the second initiation precursor.
Claim 22
Dependent Claim
27 words
The method of claim 16 wherein the forming the initiation layer on the second region substantially fills holes in the initiation layer formed on the first region.
Claim 23
Dependent Claim
84 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first initiation layer on the substrate; contacting the first initiation layer with a deposition precursor and forming a deposition layer on the first initiation layer; and contacting at least the deposition layer and a portion of the substrate on which the first initiation layer did not form with a second initiation precursor different from the first initiation precursor, and forming a second initiation layer at least on such portion.
Claim 24
Dependent Claim
84 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first initiation layer on the substrate; contacting the first initiation layer with a deposition precursor and forming a deposition layer on the first initiation layer; and contacting at least the deposition layer and a portion of the substrate on which the first initiation layer did not form with a second initiation precursor different from the first initiation precursor, and forming a second initiation layer at least on such portion.
Claim 25
Dependent Claim
22 words
The method of claim 18 wherein the first initiation layer, deposition layer, and second initiation layer each consist essentially of a monolayer.
Claim 26
Dependent Claim
44 words
The method of claim 18 wherein the contacting at least the deposition layer and a portion of the substrate comprises contacting with a plurality of initiation precursors, including the second initiation precursor, at least one of which is different from the first initiation precursor.
Claim 27
Dependent Claim
20 words
The method of claim 18 wherein the forming the second initiation layer substantially fills holes in the first initiation layer.
Claim 28
Dependent Claim
20 words
The method of claim 20 wherein the forming the second initiation layer substantially fills holes in the first initiation layer.
Claim 29
Dependent Claim
75 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first initiation layer on the substrate; contacting the first initiation layer with a deposition precursor and forming a deposition layer on the first initiation layer; and contacting at least the deposition layer with a plurality of initiation precursors simultaneously, at least one of which is different from the first initiation precursor, and forming a second initiation layer over the substrate.
Claim 30
Dependent Claim
75 words
A deposition method comprising: contacting a substrate with a first initiation precursor and forming a first initiation layer on the substrate; contacting the first initiation layer with a deposition precursor and forming a deposition layer on the first initiation layer; and contacting at least the deposition layer with a plurality of initiation precursors simultaneously, at least one of which is different from the first initiation precursor, and forming a second initiation layer over the substrate.
Claim 31
Dependent Claim
22 words
The method of claim 23 wherein the first initiation layer, deposition layer, and second initiation layer each consist essentially of a monolayer.
Claim 32
Dependent Claim
18 words
The method of claim 23 wherein one of the plurality of initiation precursors is the first initiation precursor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-09-29 | 2007-03-31 | 2007-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-09-29 | 2011-03-31 | 2011-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-09-29 | 2015-03-31 | 2015-09-30 | $7700.00 | Window Closed / Lapsed |