Patent US6593641B1 successfully refreshed from Google Patents.
US6593641B1
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Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 2001-07-16
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Granted: 2003-07-15
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Expires: 2021-07-16
Abstract
Abstract Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
Inventors
- 👤 Eugene A. Fitzergald
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:44
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/801; H10D30/01; H10D30/051; H10D30/0516; H10D30/60; H10D30/751; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0128; H10D84/0165; H10D84/0167; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181; H10D30/637; H10D84/8311
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
15 words
A SiGe heterostructure on a relaxed SiGe layer comprising active device layers and sacrificial layers.
Claim 2
Dependent Claim
15 words
A SiGe heterostructure on a relaxed SiGe layer comprising active device layers and sacrificial layers.
Claim 3
Dependent Claim
17 words
The structure of claim 1 , wherein the sacrificial layers comprise SiO 2 and semiconductor surface layers.
Claim 4
Dependent Claim
19 words
The structure of claim 2 , wherein the semiconductor surface layers comprise at least one layer of polycrystalline Si.
Claim 5
Dependent Claim
19 words
The structure of claim 2 , wherein the semiconductor surface layers comprise at least one layer of polycrystalline SiGe.
Claim 6
Dependent Claim
19 words
The structure of claim 2 , wherein the semiconductor surface layers comprise at least one layer of polycrystalline Ge.
Claim 7
Dependent Claim
19 words
The structure of claim 2 , wherein the semiconductor surface layers comprise at least one layer of amorphous Si.
Claim 8
Dependent Claim
19 words
The structure of claim 2 , wherein the semiconductor surface layers comprise at least one layer of amorphous Ge.
Claim 9
Dependent Claim
19 words
The structure of claim 2 , wherein the semiconductor surface layers comprise at least one layer of amorphous SiGe.
Claim 10
Dependent Claim
26 words
A SiGe heterostructure comprising a layer of SiGe having an average surface roughness less than 2 nm, regrown device layers thereover, and regions including alloyed metal-Si—Ge.
Claim 11
Dependent Claim
26 words
A SiGe heterostructure comprising a layer of SiGe having an average surface roughness less than 2 nm, regrown device layers thereover, and regions including alloyed metal-Si—Ge.
Claim 12
Dependent Claim
11 words
The structure of claim 9 , wherein the metal comprises Ti.
Claim 13
Dependent Claim
11 words
The structure of claim 9 , wherein the metal comprises Co.
Claim 14
Dependent Claim
11 words
The structure of claim 9 , wherein the metal comprises Ni.
Claim 15
Dependent Claim
92 words
A SiGe FET comprising: (i) a gate region comprising a relaxed SiGe layer, at least one SiGe device layer, a surface Si layer, and gate stack layers; and (ii) source and drain contact areas adjacent to but differing in structure from the gate regions, the source and drain contact areas comprising a first relaxed SiGe layer having a first Ge concentration, SiGe device layers, a Si layer, a second SiGe layer having a second Ge concentration higher than the first Ge concentration, and, thereover, a surface Si layer alloy with a metal.
Claim 16
Dependent Claim
92 words
A SiGe FET comprising: (i) a gate region comprising a relaxed SiGe layer, at least one SiGe device layer, a surface Si layer, and gate stack layers; and (ii) source and drain contact areas adjacent to but differing in structure from the gate regions, the source and drain contact areas comprising a first relaxed SiGe layer having a first Ge concentration, SiGe device layers, a Si layer, a second SiGe layer having a second Ge concentration higher than the first Ge concentration, and, thereover, a surface Si layer alloy with a metal.
Claim 17
Dependent Claim
11 words
The FET of claim 13 , wherein the metal comprises Ti.
Claim 18
Dependent Claim
11 words
The FET of claim 13 , wherein the metal comprises Co.
Claim 19
Dependent Claim
11 words
The FET of claim 13 , wherein the metal comprises Ni.
References Cited (Backward Citations)
US5155571A
Cited
US5442205A
Cited
US5426069A
Cited
US5523592A
Cited
US5792679A
Cited
US5461243A
Cited
US5759898A
Cited
US5534713A
Cited
EP0683522A2
Cited
US5683934A
Cited
US6207977B1
Cited
US6271551B1
Cited
US6096590A
Cited
US5998807A
Cited
US5891769A
Cited
US6059895A
Cited
US5906951A
Cited
WO1998059365A1
Cited
US6107653A
Cited
US6117750A
Cited
WO1999053539A1
Cited
JP2000031935A
Cited
JP2000031491A
Cited
GB2342777A
Cited
EP1020900A2
Cited
WO2000054338A1
Cited
US6350993B1
Cited
US6251755B1
Cited
US6323108B1
Cited
US6242324B1
Cited
US6339232B1
Cited
WO2001054202A1
Cited
WO2001093338A1
Cited
WO2001099169A2
Cited
WO2002013262A2
Cited
US20020068393A1
Cited
WO2002027783A1
Cited
US20020140031A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-07-14 | 2007-01-13 | 2007-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-07-14 | 2011-01-13 | 2011-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-07-14 | 2015-01-13 | 2015-07-15 | $7700.00 | Window Closed / Lapsed |