Vertical MISFET devices

Claim 2

A Vertical MISFET device composed of at least two semiconducting materials, comprising: a source layer with a first orientation; a drain layer with second first orientation; an undoped or lowly doped channel layer in between said source layer and said drain layer and having said first orientation and having an interface with said source layer, said interface having a band structure; a gate overlapping at least partially said source layer, said channel layer and said drain layer with an insulating layer therebetween; and a semiconductor heterojunction being formed between said source layer and said channel layer, and an undoped or lowly doped region being present in said source layer adjoining to said interface, said heterojunction and said lowly doped region achieving a bending of the band structure at said interface such that transistor action can be achieved through modulating voltage being applied on said gate.

Claim 3

The Vertical MISFET device of claim 1 wherein the gate has a second orientation, said second orientation being at an angle of about 90 degrees with respect to said first orientation.

Claim 4

A Vertical MISFET device comprising at least one stack of a NMOS type vertical MISFET sub-device, said NMOS type sub-device comprising: a first drain layer made of a highly n-doped material; a first channel layer made of an undoped or lowly p-doped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer, and forms a first interface with said fist source layer, said first source layer comprising at least a double layer comprising an undoped or lowly n-type doped region adjoining to said first interface and a highly n-type doped region; a first heterojunction being formed between said first source layer and said first channel layer, and said first heterojunction and said undoped or lowly n-type doped region achieving a bending of the band structure at said first interface; said NMOS type sub-device grown on top of a PMOS type vertical MISFET sub-device, having their drain layers facing each other, said PMOS type sub-device comprising: a second drain layer made of a highly p-type doped material comprising a highly doped layer; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said second interface and a highly doped region; a second heterojunction being formed between said second source layer and said second source channel layer, and said second heterojunction and said undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said second interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first and second source layers, said first and second channel layers, and said first and second drain layers with a common insulating layer therebetween.

Claim 5

A Vertical MISFET device comprising at least one stack of a NMOS type vertical MISFET sub-device, said NMOS type sub-device comprising: a first drain layer made of a highly n-doped material; a first channel layer made of an undoped or lowly p-doped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer, and forms a first interface with said fist source layer, said first source layer comprising at least a double layer comprising an undoped or lowly n-type doped region adjoining to said first interface and a highly n-type doped region; a first heterojunction being formed between said first source layer and said first channel layer, and said first heterojunction and said undoped or lowly n-type doped region achieving a bending of the band structure at said first interface; said NMOS type sub-device grown on top of a PMOS type vertical MISFET sub-device, having their drain layers facing each other, said PMOS type sub-device comprising: a second drain layer made of a highly p-type doped material comprising a highly doped layer; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said second interface and a highly doped region; a second heterojunction being formed between said second source layer and said second source channel layer, and said second heterojunction and said undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said second interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first and second source layers, said first and second channel layers, and said first and second drain layers with a common insulating layer therebetween.

Claim 6

A Vertical MISFET device comprising at least one stack of a PMOS type vertical MISFET sub-device, said PMOS type sub-device comprising: a first drain layer made of a highly p-type doped material comprising a highly doped layer; a first channel layer made of an undoped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer and forms a first interface with said first source layer, said first source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said first interface and a highly doped region; a first heterojunction being formed between said first source layer and said first channel layer, and said first heterojunction and said undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said first interface; said PMOS sub-device grown on top of a NMOS type vertical MISFET sub-device, having their source layers facing each other, said NMOS type sub-device comprising: a second drain layer made of a highly n-doped material; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly n-type doped region adjoining to said second interface and a highly n-type doped region; a second heterojunction being formed between said second source layer and said second channel layer, and said second heterojunction and said undoped or lowly n-type doped region achieving a bending of the band structure at said second interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first and second source layers, said first and second channel layers, and said first and second drain layers with a common insulating layer therebetween.

Claim 7

A Vertical MISFET device comprising at least one stack of a PMOS type vertical MISFET sub-device, said PMOS type sub-device comprising: a first drain layer made of a highly p-type doped material comprising a highly doped layer; a first channel layer made of an undoped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer and forms a first interface with said first source layer, said first source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said first interface and a highly doped region; a first heterojunction being formed between said first source layer and said first channel layer, and said first heterojunction and said undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said first interface; said PMOS sub-device grown on top of a NMOS type vertical MISFET sub-device, having their source layers facing each other, said NMOS type sub-device comprising: a second drain layer made of a highly n-doped material; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly n-type doped region adjoining to said second interface and a highly n-type doped region; a second heterojunction being formed between said second source layer and said second channel layer, and said second heterojunction and said undoped or lowly n-type doped region achieving a bending of the band structure at said second interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first and second source layers, said first and second channel layers, and said first and second drain layers with a common insulating layer therebetween.

Claim 8

A Vertical MISFET device comprising at least one stack of a first PMOS type vertical MISFET sub-device grown on top of a second NMOS type vertical MISFET sub-device, said second NMOS type device vertical MISFET sub-device grown on top of a third PMOS type vertical MISFET sub-device, said first PMOS type sub-device comprising: a first drain layer made of a highly p-type doped material comprising a highly doped layer; a first channel layer made of an undoped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer and forms a first interface with said first source layer, said first source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said first interface and a first highly doped region; a first heterojunction being formed between said first source and said first channel layer, and said first heterojunction and said first undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said first interface; said second NMOS type sub-device comprising: a second drain layer made of a highly n-doped material; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly n-type doped region adjoining to said second interface and a highly n-type doped region; a second heterojunction being formed between said second source layer and said second channel layer, and said second heterojunction and said undoped or lowly n-type doped region achieving a bending of the band structure at said second interface; said third PMOS type sub-device comprising: a third drain layer made of a highly p-type doped material comprising a highly doped layer; a third channel layer made of an undoped material; a third source layer positioned such that said third channel layer is located between said third drain layer and said third source layer and forms a third interface with said third source layer, said third source layer comprising at least a double layer comprising a second undoped or lowly doped Si 1-x Ge x region adjoining to said third interface and a second highly doped region; a third heterojunction being formed between said third source layer and said third channel layer, and said third heterojunction and said second undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said third interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first, second, and third source layers, said first, second, and third channel layers, and said first, second, and third drain layers with a common insulating layer therebetween; wherein the first source layer faces the second source layer, and the second drain layer faces the third drain layer.

Claim 9

A Vertical MISFET device comprising at least one stack of a first PMOS type vertical MISFET sub-device grown on top of a second NMOS type vertical MISFET sub-device, said second NMOS type device vertical MISFET sub-device grown on top of a third PMOS type vertical MISFET sub-device, said first PMOS type sub-device comprising: a first drain layer made of a highly p-type doped material comprising a highly doped layer; a first channel layer made of an undoped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer and forms a first interface with said first source layer, said first source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said first interface and a first highly doped region; a first heterojunction being formed between said first source and said first channel layer, and said first heterojunction and said first undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said first interface; said second NMOS type sub-device comprising: a second drain layer made of a highly n-doped material; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly n-type doped region adjoining to said second interface and a highly n-type doped region; a second heterojunction being formed between said second source layer and said second channel layer, and said second heterojunction and said undoped or lowly n-type doped region achieving a bending of the band structure at said second interface; said third PMOS type sub-device comprising: a third drain layer made of a highly p-type doped material comprising a highly doped layer; a third channel layer made of an undoped material; a third source layer positioned such that said third channel layer is located between said third drain layer and said third source layer and forms a third interface with said third source layer, said third source layer comprising at least a double layer comprising a second undoped or lowly doped Si 1-x Ge x region adjoining to said third interface and a second highly doped region; a third heterojunction being formed between said third source layer and said third channel layer, and said third heterojunction and said second undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said third interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first, second, and third source layers, said first, second, and third channel layers, and said first, second, and third drain layers with a common insulating layer therebetween; wherein the first source layer faces the second source layer, and the second drain layer faces the third drain layer.

Claim 10

A Vertical MISFET device comprising at least one stack of a first NMOS type vertical MISFET sub-device grown on the top of a second PMOS type vertical MISFET sub-device, said second PMOS type vertical MISFET sub-device grown on the top of a third NMOS type vertical MISFET sub-device, said first NMOS type sub-device comprising: a first drain layer made of a highly n-doped material; a first channel layer made of an undoped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer and forms a first interface with said first source layer, said first source layer comprising at least a double layer comprising a first undoped or lowly n-type doped region adjoining to said first interface and a first highly n-type doped region; a first heterojunction being formed between said first source layer and said first channel layer, and said first heterojunction and said first undoped or lowly n-type doped region achieving a bending of the band structure at said first interface; said second PMOS type sub-device comprising: a second drain layer made of a highly p-type doped material comprising a highly doped layer; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said second interface and a highly doped region; a second heterojunction being formed between said second source layer and said second channel layer, and said second heterojunction and said undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said second interface; said third NMOS type sub-device comprising: a third drain layer made of a highly n-doped material; a third channel layer made of an undoped material; a third source layer positioned such that said third channel layer is located between said third drain layer and said third source layer and forms a third interface with said third source layer, said third source layer comprising at least a double layer comprising a second undoped or lowly n-type doped region adjoining to said third interface and a second highly n-type doped region; a third heterojunction being formed between said third source layer and said third channel layer, and said third heterojunction and said second undoped or lowly n-type doped region achieving a bending of the band structure at said third interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first, second, and third source layers, said first second, and third channel layers, and said first, second, and third drain layers with a common insulating layer therebetween; wherein the first drain layer faces the second drain layer, and the second source layer faces the third source layer.

Claim 11

A Vertical MISFET device comprising at least one stack of a first NMOS type vertical MISFET sub-device grown on the top of a second PMOS type vertical MISFET sub-device, said second PMOS type vertical MISFET sub-device grown on the top of a third NMOS type vertical MISFET sub-device, said first NMOS type sub-device comprising: a first drain layer made of a highly n-doped material; a first channel layer made of an undoped material; a first source layer positioned such that said first channel layer is located between said first drain layer and said first source layer and forms a first interface with said first source layer, said first source layer comprising at least a double layer comprising a first undoped or lowly n-type doped region adjoining to said first interface and a first highly n-type doped region; a first heterojunction being formed between said first source layer and said first channel layer, and said first heterojunction and said first undoped or lowly n-type doped region achieving a bending of the band structure at said first interface; said second PMOS type sub-device comprising: a second drain layer made of a highly p-type doped material comprising a highly doped layer; a second channel layer made of an undoped material; a second source layer positioned such that said second channel layer is located between said second drain layer and said second source layer and forms a second interface with said second source layer, said second source layer comprising at least a double layer comprising an undoped or lowly doped Si 1-x Ge x region adjoining to said second interface and a highly doped region; a second heterojunction being formed between said second source layer and said second channel layer, and said second heterojunction and said undoped or lowly doped Si 1-x Ge x region achieving a bending of the band structure at said second interface; said third NMOS type sub-device comprising: a third drain layer made of a highly n-doped material; a third channel layer made of an undoped material; a third source layer positioned such that said third channel layer is located between said third drain layer and said third source layer and forms a third interface with said third source layer, said third source layer comprising at least a double layer comprising a second undoped or lowly n-type doped region adjoining to said third interface and a second highly n-type doped region; a third heterojunction being formed between said third source layer and said third channel layer, and said third heterojunction and said second undoped or lowly n-type doped region achieving a bending of the band structure at said third interface; the vertical MISFET device further comprising a common gate overlapping at least partially said first, second, and third source layers, said first second, and third channel layers, and said first, second, and third drain layers with a common insulating layer therebetween; wherein the first drain layer faces the second drain layer, and the second source layer faces the third source layer.

Claim 12

A Vertical MISFET device according to claim 3 having a surrounding gate common to the whole stack of devices.

Claim 13

The Vertical MISFET device of claim 4 having a surrounding gate common to the whole stack of devices.

Claim 14

The Vertical MISFET device of claim 5 having a surrounding gate common to the whole stack of devices.

Claim 15

The Vertical MISFET device of claim 6 having a surrounding gate common to the whole stack of devices.