US5523592A
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Semiconductor optical device, manufacturing method for the same, and opto-electronic integrated circuit using the same
Assignee: Hitachi Ltd
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Filing: 1994-02-01
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Granted: 1996-06-04
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Expires: 2014-02-01
Abstract
Abstract By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si 0 .8 Ge 0 .2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenated amorphous Si 1-B C B layer on it, iii) mounting an n-Si 0 .55 Ge 0 .40 C 0 .05 layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si 0 .55 Ge 0 .40 C 0 .05 layer and Si 0 .8 Ge 0 .2 layer, an undoped single crystalline Si 0 .55 Ge 0 .40 C 0 .05 layer, and a p-Si 0 .55 Ge 0 .40 C 0 .05 layer sequentially on it or iv) mounting an n type single crystalline Si layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si layer and Si 0 .8 Ge 0 .1 Sn 0 .1 layer, an undoped single crystalline Si layer, and a p type single crystalline Si layer sequentially on it, a semiconductor optical device is obtained.
Inventors
- 👤 Kiyokazu Nakagawa
- 👤 Akio Nishida
- 👤 Toshikazu Shimada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; B; B82; B82Y; B82Y20/00; H10H29/00; H10H29/10; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0262; H01S5/10; H01S5/18; H01S5/183; H01S5/30; H01S5/34; H01S5/3427
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
107 words
A semiconductor optical device comprising a first conductivity type single crystalline Si substrate, a first conductivity type buffer layer of Si 1-X Ge X which is formed on said single crystalline Si substrate, a layered structure consisting of at least one pair of an Si 1-Y Ge Y layer and Si 1-Z Ge Z layer which are lattice-matched and formed alternately on said buffer layer, and a second conductivity type Si 1-Y Ge Y layer which is formed on said layered structure, wherein X, Y, and Z satisfy the conditions that 0<X<0.5, 0<Y<0.5, 0<Z<0.5, Y<X, and Y<Z, and wherein said layered structure forms a light emitting region.
Claim 2
Dependent Claim
107 words
A semiconductor optical device comprising a first conductivity type single crystalline Si substrate, a first conductivity type buffer layer of Si 1-X Ge X which is formed on said single crystalline Si substrate, a layered structure consisting of at least one pair of an Si 1-Y Ge Y layer and Si 1-Z Ge Z layer which are lattice-matched and formed alternately on said buffer layer, and a second conductivity type Si 1-Y Ge Y layer which is formed on said layered structure, wherein X, Y, and Z satisfy the conditions that 0<X<0.5, 0<Y<0.5, 0<Z<0.5, Y<X, and Y<Z, and wherein said layered structure forms a light emitting region.
Claim 3
Dependent Claim
36 words
A semiconductor optical device according to claim 1, wherein the thicknesses of said Si 1-Y Ge Y layer and said Si 1-Z Ge Z layer constituting said layered structure range from 5 nm to 10 nm.
Claim 4
Dependent Claim
22 words
A semiconductor optical device according to claim 2, wherein the thickness of said buffer layer is at least the critical film thickness.
Claim 5
Dependent Claim
30 words
A semiconductor optical device according to claim 1, wherein said layered structure comprises a plurality of pairs of Si 1-Y Ge Y layers and said Si 1-Z Ge Z layers.
Claim 6
Dependent Claim
128 words
A semiconductor optical device comprising a first conductivity type single crystalline Si substrate, a layered structure consisting of at least one pair of an undoped single crystalline Si layer and single crystalline Si 1-A Ge A mixed crystal layer (0<A<1) which are lattice-matched and formed alternately on said single crystalline Si layer, a second undoped single crystalline Si layer which is mounted on said layered structure, and a second conductivity type Si 1-B C B layer (0≦B<1) which is mounted on said second undoped single crystalline Si layer, wherein said Si 1-B C B layer has a wider band gap than said second undoped single crystalline Si layer to form a potential barrier and, said single crystalline Si 1-A Ge A mixed crystal is a light emitting region.
Claim 7
Dependent Claim
128 words
A semiconductor optical device comprising a first conductivity type single crystalline Si substrate, a layered structure consisting of at least one pair of an undoped single crystalline Si layer and single crystalline Si 1-A Ge A mixed crystal layer (0<A<1) which are lattice-matched and formed alternately on said single crystalline Si layer, a second undoped single crystalline Si layer which is mounted on said layered structure, and a second conductivity type Si 1-B C B layer (0≦B<1) which is mounted on said second undoped single crystalline Si layer, wherein said Si 1-B C B layer has a wider band gap than said second undoped single crystalline Si layer to form a potential barrier and, said single crystalline Si 1-A Ge A mixed crystal is a light emitting region.
Claim 8
Dependent Claim
58 words
A semiconductor optical device according to claim 5, wherein said first conductivity type single crystalline Si substrate is an n type single crystalline Si substrate and constitutes an electron injection electrode, and said second conductivity type Si 1-B C B layer is a p type hydrogenated amorphous Si 1-B C B layer and constitutes a hole injection electrode.
Claim 9
Dependent Claim
41 words
A semiconductor optical device according to claim 5, wherein the thicknesses of said Si 1-A Ge A mixed crystal layer and Si layer constituting said layered structure range from 2 nm to 20 nm and 2 nm to 10 nm respectively.
Claim 10
Dependent Claim
33 words
A semiconductor optical device according to claim 5, wherein said layered structure comprises a plurality of pairs of undoped single crystalline Si layers and single crystalline Si 1-A Ge A mixed crystal layers.
Claim 11
Dependent Claim
151 words
A semiconductor optical device comprising a first conductivity type single crystalline Si 1-C-D Ge C C D mixed crystal layer (0<C<1, 0<D<1), a layered structure consisting of at least one pair of an undoped single crystalline Si 1-E-F Ge E C F mixed crystal layer (0<E<1, 0<F<1) and a single crystalline Si 1-G Ge G mixed crystal layer (0<G<1) which are lattice-matched and formed alternately on said single crystalline Si 1-C-D Ge C C D mixed crystal layer, a second undoped single crystalline Si 1-E-F Ge E C F mixed crystal layer which is mounted on said layered structure, and a second conductivity type single crystalline Si 1-H-I Ge H C 1 mixed crystal layer (0≦H<1, 0<I<1) which is mounted on said second undoped single crystalline Si 1-E-F Ge E C F mixed crystal layer, wherein said single crystalline Si 1-G Ge G mixed crystal layer is a light emitting region.
Claim 12
Dependent Claim
151 words
A semiconductor optical device comprising a first conductivity type single crystalline Si 1-C-D Ge C C D mixed crystal layer (0<C<1, 0<D<1), a layered structure consisting of at least one pair of an undoped single crystalline Si 1-E-F Ge E C F mixed crystal layer (0<E<1, 0<F<1) and a single crystalline Si 1-G Ge G mixed crystal layer (0<G<1) which are lattice-matched and formed alternately on said single crystalline Si 1-C-D Ge C C D mixed crystal layer, a second undoped single crystalline Si 1-E-F Ge E C F mixed crystal layer which is mounted on said layered structure, and a second conductivity type single crystalline Si 1-H-I Ge H C 1 mixed crystal layer (0≦H<1, 0<I<1) which is mounted on said second undoped single crystalline Si 1-E-F Ge E C F mixed crystal layer, wherein said single crystalline Si 1-G Ge G mixed crystal layer is a light emitting region.
Claim 13
Dependent Claim
82 words
A semiconductor optical device according to claim 9, wherein said first conductivity type single crystalline Si 1-C-D Ge C C D mixed crystal layer is an n type single crystalline Si 1-C-D Ge C C D mixed crystal layer and constitutes an electron injection electrode and said second conductivity type single crystalline Si 1-H-I Ge H C I mixed crystal layer is a p type single crystalline Si 1-H-I Ge H C I mixed crystal layer and constitutes a hole injection electrode.
Claim 14
Dependent Claim
48 words
A semiconductor optical device according to claim 9, wherein the thicknesses of said Si 1-E-F Ge E C F mixed crystal layer and Si 1-G Ge G mixed crystal layer constituting said layered structure range from 2 nm to 10 nm and 2 nm to 20 nm respectively.
Claim 15
Dependent Claim
40 words
A semiconductor optical device according to claim 9, wherein said layered structure comprises a plurality of pairs of undoped single crystalline Si 1-E-F Ge E C F mixed crystal layers and single crystalline Si 1-G Ge G mixed crystal layers.
Claim 16
Dependent Claim
141 words
A semiconductor optical device comprising a first conductivity type single crystalline Si 1-J Ge J mixed crystal layer (0≦J<1), a layered structure consisting of at least one pair of an undoped single crystalline Si 1-K Ge K mixed crystal layer (0≦K<1) and a single crystalline Si 1-L-M Ge L Sn M mixed crystal layer (0<L<1, 0<M<1) which are lattice-matched and formed alternately on said single crystalline Si 1-J Ge J mixed crystal layer, a second undoped single crystalline Si 1-K Ge K mixed crystal layer which is mounted on said layered structure, and a second conductivity type single crystalline Si 1-N Ge N mixed crystal layer (0<N<1) which is mounted on said second undoped single crystalline Si 1-K Ge K mixed crystal layer wherein said single crystalline Si 1-L-M Ge L Sn M mixed crystal layer is a light emitting region.
Claim 17
Dependent Claim
141 words
A semiconductor optical device comprising a first conductivity type single crystalline Si 1-J Ge J mixed crystal layer (0≦J<1), a layered structure consisting of at least one pair of an undoped single crystalline Si 1-K Ge K mixed crystal layer (0≦K<1) and a single crystalline Si 1-L-M Ge L Sn M mixed crystal layer (0<L<1, 0<M<1) which are lattice-matched and formed alternately on said single crystalline Si 1-J Ge J mixed crystal layer, a second undoped single crystalline Si 1-K Ge K mixed crystal layer which is mounted on said layered structure, and a second conductivity type single crystalline Si 1-N Ge N mixed crystal layer (0<N<1) which is mounted on said second undoped single crystalline Si 1-K Ge K mixed crystal layer wherein said single crystalline Si 1-L-M Ge L Sn M mixed crystal layer is a light emitting region.
Claim 18
Dependent Claim
74 words
A semiconductor optical device according to claim 13, wherein said first conductivity type single crystalline Si 1-J Ge J mixed crystal layer is an n type single crystalline Si 1-J Ge J mixed crystal layer and constitutes an electron injection electrode, and said second conductivity type single crystalline Si 1-N Ge N mixed crystal layer is a p type single crystalline Si 1-N Ge N mixed crystal layer and constitutes a hole injection electrode.
Claim 19
Dependent Claim
49 words
A semiconductor optical device according to claim 13, wherein the thicknesses of said Si 1-K Ge K mixed crystal layer and said Si 1-L-M Ge L Sn M mixed crystal layer constituting said layered structure range from 2 nm to 10 nm and 2 nm to 20 nm respectively.
Claim 20
Dependent Claim
40 words
A semiconductor optical device according to claim 13, wherein said layered structure comprises a plurality of pairs of undoped single crystalline Si 1-K Ge K mixed crystal layers and single crystalline Si 1-L-M Ge L Sn M mixed crystal layers.
Claim 21
Dependent Claim
22 words
An opto-electronic integrated circuit comprising a semiconductor optical device as claimed in claim 1 and electronic elements formed on said Si substrate.
Claim 22
Dependent Claim
22 words
An opto-electronic integrated circuit comprising a semiconductor optical device as claimed in claim 5 and electronic elements formed on said Si substrate.
Claim 23
Dependent Claim
38 words
An opto-electronic integrated circuit comprising a semiconductor optical device as claimed in claim 9, said device being mounted on a semiconductor substrate, and electronic elements formed on the semiconductor substrate on which said semiconductor optical device is mounted.
Claim 24
Dependent Claim
38 words
An opto-electronic integrated circuit comprising a semiconductor optical device as claimed in claim 13, said device being mounted on a semiconductor substrate, and electronic elements formed on the semiconductor substrate on which said semiconductor optical device is mounted.
Claim 25
Dependent Claim
97 words
An opto-electronic integrated circuit comprising: (1) a light emitting portion having a light emitting device comprising a first semiconductor optical device as claimed in claim 1 and electronic elements formed on said Si substrate; and (2) a light sensing portion having a light sensing device comprising a second semiconductor optical device which is formed on said Si substrate and other electronic elements formed on said semiconductor substrate, wherein the light emitting surface of said light emitting device and the light sensing surface of said light sensing device are arranged so that they are opposite to each other.
Claim 26
Dependent Claim
97 words
An opto-electronic integrated circuit comprising: (1) a light emitting portion having a light emitting device comprising a first semiconductor optical device as claimed in claim 5 and electronic elements formed on said Si substrate; and (2) a light sensing portion having a light sensing device comprising a second semiconductor optical device which is formed on said Si substrate and other electronic elements formed on said semiconductor substrate, wherein the light emitting surface of said light emitting device and the light sensing surface of said light sensing device are arranged so that they are opposite to each other.
Claim 27
Dependent Claim
113 words
An opto-electronic integrated circuit comprising: (1) a light emitting portion having a light emitting device comprising a first semiconductor optical device as claimed in claim 9, said device being mounted on a semiconductor substrate, and electronic elements formed on the semiconductor substrate on which said light emitting device is mounted; and (2) a light sensing portion having a light sensing device comprising a second semiconductor optical device which is formed on said semiconductor substrate and other electronic elements formed on said semiconductor substrate, wherein the light emitting surface of said light emitting device and the light sensing surface of said light sensing device are arranged so that they are opposite to each other.
Claim 28
Dependent Claim
113 words
An opto-electronic integrated circuit comprising: (1) a light emitting portion having a light emitting device comprising a first semiconductor optical device as claimed in claim 13, said device being mounted on a semiconductor substrate, and electronic elements formed on the semiconductor substrate on which said light emitting device is mounted; and (2) a light sensing portion having a light sensing device comprising a second semiconductor optical device which is formed on said semiconductor substrate and other electronic elements formed on said semiconductor substrate, wherein the light emitting surface of said light emitting device and the light sensing surface of said light sensing device are arranged so that they are opposite to each other.
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