US6562713B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of protecting semiconductor areas while exposing a gate
Assignee: GlobalFoundries US Inc
•
Filing: 2002-02-19
•
Granted: 2003-05-13
•
Expires: 2022-02-19
Abstract
Abstract Disclosed is a method of protecting semiconductor areas while exposing a gate for processing on a semiconductor surface, the method comprising depositing a planarizing high density plasma layer of a silicon compound, selected from the group silicon oxide and silicon nitride, in a manner effective in leaving an upper surface of said gate exposed. Also disclosed is a method of processing short gates while protecting long gates on a semiconductor surface, the method comprising depositing a planarizing layer of a silicon compound, selected from the group silicon nitride and silicon oxide, up to substantially the same height as said gates, and processing said semiconductor surface.
Inventors
- 👤 Michael P. Belyansky
- 👤 Omer H. Dokumaci
- 👤 Bruce B. Doris
- 👤 Hussein I. Hanafi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/017; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0135; H10D84/0142; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
52 words
A method of protecting semiconductor areas while exposing a gate for processing on a semiconductor surface, the method comprising: depositing a planarizing high density plasma layer of a silicon compound, selected from the group silicon oxide and silicon nitride, in a manner effective in leaving an upper surface of said gate exposed.
Claim 2
Independent Claim
52 words
A method of protecting semiconductor areas while exposing a gate for processing on a semiconductor surface, the method comprising: depositing a planarizing high density plasma layer of a silicon compound, selected from the group silicon oxide and silicon nitride, in a manner effective in leaving an upper surface of said gate exposed.
Claim 3
Dependent Claim
38 words
The method of claim 1 wherein said deposition step further comprises: depositing said silicon compound to a thickness substantially the same height of said gate; and the removal of any excess said silicon compound from atop said gate.
Claim 4
Dependent Claim
35 words
The method of claim 2 wherein said removal step further comprises: depositing and patterning a resist layer to expose the top of said gate; etching away said excess silicon compound; and removing said resist layer.
Claim 5
Independent Claim
19 words
The method of step 1 wherein said depositing step is accomplished with a high density plasma chemical vapor deposition.
Claim 6
Independent Claim
19 words
The method of step 1 wherein said depositing step is accomplished with a high density plasma chemical vapor deposition.
Claim 7
Independent Claim
56 words
A method of processing short gates while protecting long gates on a semiconductor surface, the method comprising: depositing a planarizing layer of a silicon compound, selected from the group silicon nitride and silicon oxide, up to substantially the same height as said gates using a high density plasma chemical vapor deposition; and processing said semiconductor surface.
Claim 8
Independent Claim
56 words
A method of processing short gates while protecting long gates on a semiconductor surface, the method comprising: depositing a planarizing layer of a silicon compound, selected from the group silicon nitride and silicon oxide, up to substantially the same height as said gates using a high density plasma chemical vapor deposition; and processing said semiconductor surface.
Claim 9
Dependent Claim
13 words
The method of claim 5 , wherein said processing is a gate implant.
Claim 10
Independent Claim
62 words
A method of protecting semiconductor areas while exposing a gate for processing on a semiconductor surface, the method comprising: depositing a planarizing high density plasma layer of a silicon compound on a dielectric layer and abutting sidewalls of the gate using high density plasma chemical vapor deposition, wherein said plasma layer is substantially level with the top horizontal surface of the gate.
Claim 11
Independent Claim
62 words
A method of protecting semiconductor areas while exposing a gate for processing on a semiconductor surface, the method comprising: depositing a planarizing high density plasma layer of a silicon compound on a dielectric layer and abutting sidewalls of the gate using high density plasma chemical vapor deposition, wherein said plasma layer is substantially level with the top horizontal surface of the gate.
Claim 12
Dependent Claim
20 words
The method of claim 7 , wherein the silicon compound is from the group of silicon oxide and silicon nitride.
Claim 13
Dependent Claim
27 words
The method of claim 7 , wherein said deposition step further comprises: removing of any excess said silicon compound from the top horizontal surface of the gate.
Claim 14
Dependent Claim
36 words
The method of claim 9 , wherein said removal step further comprises; depositing and patterning a resist layer to expose the top of said gate; etching away said excess silicon compound; and removing said resist layer.
References Cited (Backward Citations)
US4502202A
Cited
US4564584A
Cited
US4555843A
Cited
US4745086A
Cited
US4728617A
Cited
EP0484128A1
Cited
JPH0653507A
Cited
JPH06204213A
Cited
JPH06349765A
Cited
US5453389A
Cited
US5472898A
Cited
US5536669A
Cited
US5665621A
Cited
JPH09312397A
Cited
US5828102A
Cited
US5893739A
Cited
US5731239A
Cited
US6008096A
Cited
US6060345A
Cited
US6117715A
Cited
US6060358A
Cited
US5856225A
Cited
US6133102A
Cited
US6110818A
Cited
US6251731B1
Cited
US6365523B1
Cited
US6060364A
Cited
US6291278B1
Cited
US6368988B1
Cited
US6239008B1
Cited
US6258677B1
Cited
US6156598A
Cited
US6277683B1
Cited
US6410403B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-05-12 | 2006-11-11 | 2007-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-12 | 2010-11-11 | 2011-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-12 | 2014-11-11 | 2015-05-13 | $7700.00 | Window Closed / Lapsed |