Patent US225156A successfully refreshed from Google Patents.
US6537846B2
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Substrate bonding using a selenidation reaction
Assignee: Hewlett Packard Development Co LP
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Filing: 2001-03-30
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Granted: 2003-03-25
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Expires: 2021-03-30
Abstract
Abstract A selenidation reaction for bonding one or more active substrates to a base substrate is disclosed. A bonded-substrate is fabricated by forming a first multi-stacked layer of selenium and indium on a bonding surface of an active substrate and forming a second multi-stacked layer of selenium and indium on a mounting surface of a base substrate. The first and second multi-stacked layers are placed into contact with each other with substantially no pressure. Then the active substrate and the base substrate are bonded to each other by annealing them in an inert ambient to form an indium-selenium compound bond layer that adhesively bonds the substrates to each other. The annealing can occur at a lower temperature than prior wafer-bonding processes and the first and second multi-stacked layers can be deposited over a wide range of relatively low temperatures including room temperature. Additionally, tellurium can be added to the selenium of either one or both of the first and second multi-stacked layers to reduce the annealing temperature and to form an indium-selenium-tellurium compound bond layer that adhesively bonds the substrates to each other. Elemental compounds or amorphous compounds can be used for the materials of the first and second multi-stacked layers to form a polycrystalline or amorphous compound bond layer respectively. One advantage of the compound bond layer is that it can be dissolved using a selective wet etching material so that the active substrate and the base substrate can be non-destructively detached from each other.
Inventors
- 👤 Heon Lee
- 👤 Chung Ching Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:59
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
146 words
A method of fabricating a bonded-substrate that includes at least one active substrate and a base substrate upon which the active substrate is bonded by a selenidation reaction, comprising: forming a first multi-stacked layer by depositing alternating layers of a first material and a second material on a bonding surface of the active substrate, the first material including selenium, and the second material including a material selected from the group consisting of indium, gallium, antimony, and aluminum; forming a second multi-stacked layer by depositing alternating layers of the first material and the second material on a mounting surface of the base substrate; placing the first and second multi-stacked layers into contact with each other; and bonding the active and base substrates to each other by annealing the substrates in an inert ambient to form a compound bond layer that adhesively bonds the substrates to each other.
Claim 2
Independent Claim
146 words
A method of fabricating a bonded-substrate that includes at least one active substrate and a base substrate upon which the active substrate is bonded by a selenidation reaction, comprising: forming a first multi-stacked layer by depositing alternating layers of a first material and a second material on a bonding surface of the active substrate, the first material including selenium, and the second material including a material selected from the group consisting of indium, gallium, antimony, and aluminum; forming a second multi-stacked layer by depositing alternating layers of the first material and the second material on a mounting surface of the base substrate; placing the first and second multi-stacked layers into contact with each other; and bonding the active and base substrates to each other by annealing the substrates in an inert ambient to form a compound bond layer that adhesively bonds the substrates to each other.
Claim 3
Dependent Claim
29 words
The method as set forth in claim 1 wherein the annealing step comprises heating the substrates at a temperature from about 200 degrees centigrade to about 300 degrees centigrade.
Claim 4
Dependent Claim
34 words
The method as set forth in claim 1 wherein the alternating layers of the first and second multi-staked layers are deposited at a temperature from about 0.0 degrees centigrade to about 50.0 degrees centigrade.
Claim 5
Dependent Claim
15 words
The method as set forth in claim 1 wherein the first material further includes tellurium.
Claim 6
Dependent Claim
29 words
The method as set forth in claim 4 wherein the annealing step comprises heating the substrates at a temperature from about 150 degrees centigrade to about 300 degrees centigrade.
Claim 7
Dependent Claim
34 words
The method as set forth in claim 4 wherein the alternating layers of the first and second multi-staked layers are deposited at a temperature from about 0.0 degrees centigrade to about 50.0 degrees centigrade.
Claim 8
Dependent Claim
32 words
The method as set forth in claim 1 wherein the active substrate and the base substrate are a material selected from the group consisting of a semiconductor, a metal, and a dielectric.
Claim 9
Dependent Claim
32 words
The method as set forth in claim 1 wherein the active substrate and the base substrate are a material selected from the group consisting of silicon, silicon oxide, alumina, and gallium arsenide.
Claim 10
Dependent Claim
21 words
The method as set forth in claim 1 wherein the active substrate and the base substrate are made from dissimilar materials.
Claim 11
Dependent Claim
21 words
The method as set forth in claim 1 wherein the active substrate and the base substrate are made from identical materials.
Claim 12
Dependent Claim
37 words
The method as set forth in claim 1 wherein the placing step comprises bringing the first and second multi-stacked layers into contact with each other with substantially no pressure being applied to the active and base substrates.
Claim 13
Dependent Claim
35 words
The method as set forth in claim 1 wherein the first material comprises an elemental compound and the second material comprises an elemental compound and the compound bond layer is a polycrystalline compound bond layer.
Claim 14
Dependent Claim
35 words
The method as set forth in claim 1 wherein the first material comprises an amorphous compound and the second material comprises an amorphous compound and the compound bond layer is an amorphous compound bond layer.
Claim 15
Dependent Claim
92 words
The method as set forth in claim 1 wherein the forming of the first and second multi-stacked layers further comprises: forming the first multi-stacked layer on the bonding surface of at least one active substrate; forming the second multi-stacked layer on a mounting surface of another active substrate; placing the first and second multi-stacked layers into contact with each other; and forming a three-dimensional stack of active substrates by annealing the active substrates in an inert ambient to form a compound bond layer that adhesively bonds the active substrates to each other.
Claim 16
Independent Claim
122 words
A method of fabricating a bonded-substrate that includes at least one active substrate and a base substrate upon which the active substrate is bonded by a selenidation reaction, comprising: forming a first amorphous layer on a bonding surface of the active substrate; forming a send amorphous layer on a mounting ace of the base substrate, the first and second amorphous layers including selenium and a material selected from the group consisting of indium, gallium, antimony, and aluminum; placing the first and second amorphous layers into contact with each other; and bonding the active and base substrates to each other by annealing the substrates in an inert ambient to form an amorphous compound bond layer that adhesively bonds the substrates to each other.
Claim 17
Independent Claim
122 words
A method of fabricating a bonded-substrate that includes at least one active substrate and a base substrate upon which the active substrate is bonded by a selenidation reaction, comprising: forming a first amorphous layer on a bonding surface of the active substrate; forming a send amorphous layer on a mounting ace of the base substrate, the first and second amorphous layers including selenium and a material selected from the group consisting of indium, gallium, antimony, and aluminum; placing the first and second amorphous layers into contact with each other; and bonding the active and base substrates to each other by annealing the substrates in an inert ambient to form an amorphous compound bond layer that adhesively bonds the substrates to each other.
Claim 18
Dependent Claim
29 words
The method as set forth in claim 15 wherein the annealing step comprises heating the substrates at a temperature from about 200 degrees centigrade to about 300 degrees centigrade.
Claim 19
Dependent Claim
30 words
The method as set forth in claim 15 wherein the first and second amorphous layers are deposited at a temperature from about 0.0 degrees centigrade to about 50.0 degrees centigrade.
Claim 20
Dependent Claim
21 words
The method as set forth in claim 15 wherein the selenium of the first and second amorphous layers further includes tellurium.
Claim 21
Dependent Claim
29 words
The method as set forth in claim 18 wherein the annealing step comprises heating the substrates at a temperature from about 150 degrees centigrade to about 300 degrees centigrade.
Claim 22
Dependent Claim
34 words
The method as set forth in claim 18 wherein the alternating layers of the first and second multi-staked layers are deposited at a temperature from about 0.0 degrees centigrade to about 50.0 degrees centigrade.
Claim 23
Dependent Claim
32 words
The method as set forth in claim 15 wherein the active substrate and the base substrate are a material selected from the group consisting of a semiconductor, a metal, and a dielectric.
Claim 24
Dependent Claim
32 words
The method as set forth in claim 15 wherein the active substrate and the base substrate are a material selected from the group consisting of silicon, silicon oxide, alumina, and gallium arsenide.
Claim 25
Dependent Claim
21 words
The method as set forth in claim 15 wherein the active substrate and the base substrate are made from dissimilar materials.
Claim 26
Dependent Claim
21 words
The method as set forth in claim 15 wherein the active substrate and the base substrate are made from identical materials.
Claim 27
Dependent Claim
37 words
The method as set forth in claim 15 wherein the placing step comprises bringing the first and second amorphous layers into contact with each other with substantially no pressure being applied to the active and base substrates.
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| 3.5 Years (Year 4) | 2006-03-24 | 2006-09-23 | 2007-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-24 | 2010-09-23 | 2011-03-25 | $3760.00 | Window Closed / Lapsed |
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