US5871630A
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Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
Assignee: Individual
•
Filing: 1997-06-05
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Granted: 1999-02-16
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Expires: 2017-06-05
Abstract
Abstract A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In1-nGax)Se2, with the ratio of Ga/(In+Ga) being approximately 0.39.
Inventors
- 👤 Raghu N. Bhattacharya
- 👤 Falah S. Hasoon
- 👤 Holm Wiesner
- 👤 James Keane
- 👤 Rommel Noufi
- 👤 Kannan Ramanathan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:08
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; H10F71/00; C; C23; C23C; C23C28/00; C23C28/02; C23C28/023; C25; C25D; C25D5/00; C25D5/18; G; G03; G03C; G03C1/00; G03C1/005; G03C1/06; G03C1/08; G03C1/10; G03C1/12; G03C1/22; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10P; H10P14/00; H10P14/20; H10P14/203; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3436; C25D3/00; C25D3/02; C25D3/56; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y10; Y10S; Y10S205/00; Y10S205/915; Y10S438/00; Y10S438/93
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
142 words
A process for preparing a copper-indium-gallium-diselenide film, the process comprising the steps of: providing a substrate; providing an electrodeposition bath containing ions of copper, indium, and selenium, the bath further containing ions of gallium in a concentration of at least 0.05 molar; inserting said substrate into said electrodeposition bath; forming a semiconductor layer by simultaneously electrodepositing a film comprising copper, indium, selenium and gallium from said electrodeposition bath onto said substrate, the electrodeposition proceeding at an applied electrodeposition voltage of at least 0.5 volt; and depositing by physical vapor deposition additional material selected from the group consisting of copper, indium, gallium, and selenium, onto said semiconductor layer to achieve a final stoichiometry for said semiconductor layer and said additional material, combined, of approximately Cu 1 (In 1-x Ga x )Se 2 where x is within the range of 0 to 1, inclusive.
Claim 2
Dependent Claim
142 words
A process for preparing a copper-indium-gallium-diselenide film, the process comprising the steps of: providing a substrate; providing an electrodeposition bath containing ions of copper, indium, and selenium, the bath further containing ions of gallium in a concentration of at least 0.05 molar; inserting said substrate into said electrodeposition bath; forming a semiconductor layer by simultaneously electrodepositing a film comprising copper, indium, selenium and gallium from said electrodeposition bath onto said substrate, the electrodeposition proceeding at an applied electrodeposition voltage of at least 0.5 volt; and depositing by physical vapor deposition additional material selected from the group consisting of copper, indium, gallium, and selenium, onto said semiconductor layer to achieve a final stoichiometry for said semiconductor layer and said additional material, combined, of approximately Cu 1 (In 1-x Ga x )Se 2 where x is within the range of 0 to 1, inclusive.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein x is greater than approximately 0.34.
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said gallium ions are obtained from gallium nitrate.
Claim 5
Dependent Claim
17 words
The process of claim 3 wherein said electrodeposition bath further comprises at least 0.3 molar lithium chloride.
Claim 6
Dependent Claim
14 words
The process of claim 1 wherein: said indium ions are obtained from indium chloride.
Claim 7
Dependent Claim
37 words
The process of claim 1 wherein: said electrodeposition voltage comprises a DC voltage of at least 1.0 volt and an AC voltage of at least 0.5 V at a frequency of at least 1.0 KHz superimposed thereon.
Claim 8
Dependent Claim
14 words
The process of claim 6 wherein: said AC voltage consists of a pulsed voltage.
Claim 9
Dependent Claim
15 words
The process of claim 7 wherein said AC voltage frequency is at least 10 KHz.
Claim 10
Dependent Claim
23 words
The process of claim 8 wherein said DC voltage is at least 2 volts, and said AC voltage is at least 2 volts.
Claim 11
Dependent Claim
71 words
A process for preparing a photovoltaic device gallium-containing precursor film, the process comprising the steps of: providing a substrate; providing an electrodeposition bath containing ionic copper, indium, and selenium, and gallium in the approximate relative ratios of 1, 5, 1.5, and 5, respectively; inserting said substrate into said electrodeposition bath; and forming a thin film layer by simultaneously electrodepositing copper, indium, selenium and gallium from said electrodeposition bath onto said substrate.
Claim 12
Dependent Claim
71 words
A process for preparing a photovoltaic device gallium-containing precursor film, the process comprising the steps of: providing a substrate; providing an electrodeposition bath containing ionic copper, indium, and selenium, and gallium in the approximate relative ratios of 1, 5, 1.5, and 5, respectively; inserting said substrate into said electrodeposition bath; and forming a thin film layer by simultaneously electrodepositing copper, indium, selenium and gallium from said electrodeposition bath onto said substrate.
Claim 13
Dependent Claim
69 words
The process of claim 10 further comprising the step of: depositing by physical vapor deposition additional material selected from the group consisting of copper, indium, gallium, and selenium, onto said thin film layer to achieve a final stoichiometry for said thin film layer and said additional material, combined, of approximately Cu 1 (In 1-x Ga x )Se 2 where x is within the range of 0 to 1, inclusive.
Claim 14
Dependent Claim
22 words
The process of claim 10 wherein: said electrodeposition proceeds at an electrodeposition potential comprising a DC component of at least 0.5 volt.
Claim 15
Dependent Claim
27 words
The process of claim 12 wherein: said electrodeposition potential further comprises an AC component of at least 1.0 volt at a frequency of at least 1 KHz.
Claim 16
Dependent Claim
19 words
The process of claim 12 wherein said electrodeposition potential further includes an AC component of at least 0.5 volt.
Claim 17
Dependent Claim
120 words
A process for preparing a photovoltaic device gallium-containing precursor film, the process comprising the steps of: providing a substrate; providing an electrodeposition bath comprising approximately 0.01-0.02M copper ions, 0.05-0.15M indium ions, 0.05-0.15M gallium ions, and 0.01-0.03M selenium ions inserting said substrate into said electrodeposition bath; forming a metal-containing film by simultaneously electrodepositing at least three elements from said electrodeposition bath onto said substrate; and depositing by physical vapor deposition additional material selected from the group consisting of copper, indium, gallium, and selenium, onto said metal-containing film to achieve a final stoichiometry for said metal-containing film and said additional material, combined, of approximately Cu 1 (In 1-x Ga x )Se2 wherein x is within the range of approximately 0.34 to 0.50.
Claim 18
Dependent Claim
120 words
A process for preparing a photovoltaic device gallium-containing precursor film, the process comprising the steps of: providing a substrate; providing an electrodeposition bath comprising approximately 0.01-0.02M copper ions, 0.05-0.15M indium ions, 0.05-0.15M gallium ions, and 0.01-0.03M selenium ions inserting said substrate into said electrodeposition bath; forming a metal-containing film by simultaneously electrodepositing at least three elements from said electrodeposition bath onto said substrate; and depositing by physical vapor deposition additional material selected from the group consisting of copper, indium, gallium, and selenium, onto said metal-containing film to achieve a final stoichiometry for said metal-containing film and said additional material, combined, of approximately Cu 1 (In 1-x Ga x )Se2 wherein x is within the range of approximately 0.34 to 0.50.
Claim 19
Dependent Claim
16 words
The process of claim 15 wherein said electrodeposition bath further comprises at least 0.3M lithium chloride.
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