Semiconductor substrate having a superconducting thin film

Claim 2

A semiconductor substrate structure comprising: a silicon substrate; a superconducting thin film layer composed of compound oxide; an intermediate semiconductor layer interposed between said silicon substrate and said superconducting thin film layer, a first side of said intermediate semiconductor layer being in contact with said substrate and a second side of said intermediate semiconductor layer being in contact with said superconducting thin film layer, wherein said intermediate semiconductor layer comprises a compound semiconductor material, and wherein said compound semiconductor material is selected from a group consisting of SiC, GaAs, GaP, InP, InSb, ZnSe, CdTe, HgCdTe, GaAlAs, GaInAs, InAlAs, and InGaAsP.

Claim 3

A semiconductor substrate set forth in claim 1, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element α selected from IIa group of the Periodic Table, at least one element β selected from IIIa group of the Periodic Table and at least one element γ selected from a group comprising Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table.

Claim 4

A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: (α.sub.1-x β.sub.x)γ.sub.y O.sub.z in which α, β and γ have the same definition as above, x is an atomic ratio of β with respect to (α+β) and has a range of 0.1≦x≦0.9, and y and z are respective atomic ratios with respect to (α 1-x β x ) which is considered to be equal to 1 and each satisfies ranges of 0.4≦y≦3.0 and 1≦z≦5 respectively.

Claim 5

A semiconductor substrate set forth in claim 3, characterized in that said superconducting thin film layer is composed of a compound oxide represented by the general formula: (La.sub.1-x α.sub.x).sub.2 CuO.sub.4 in which α stands for Ba or Sr.

Claim 6

A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed of an oxide having perovskite or oxygen deficient perovskite crystalline structure.

Claim 7

A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-δ in which Ln stands for at least one lanthanide element selected from the group consisting of La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and δ is a number which satisfies a range of 0≦δ<1.

Claim 8

A semiconductor substrate set forth in claim 6, characterized in that the Ln is Y, Er, Ho or Dy.

Claim 9

A semiconductor substrate set forth in claim 6, characterized in that said compound oxide contain further at least one of element selected from the group consisting of Al, Fe, Co, Ni, Zn, Ag and Ti.

Claim 10

A semiconductor substrate set forth in claim 2, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Θ.sub.4 (Φ.sub.1-q, Ca.sub.q).sub.m Cu.sub.n O.sub.p+r in which Θ stands for Bi or T1, Φ stands for Sr when Θ is Bi and stands for Ba when Θ is T1, m and n are numbers each satisfying ranges of 6≦m≦10 and 4≦n≦8 respectively, p=(6+m+n), q is a number which satisfies a range of 0<q<1, and r is a number which satisfies a range of -2≦r≦+2.

Claim 11

A semiconductor substrate structure comprising: a silicon substrate; a superconducting thin film layer composed of compound oxide; and an intermediate semiconductor layer interposed between said silicon substrate and said superconducting thin film layer, a first side of said intermediate semiconductor layer being in contact with said substrate and a second side of said intermediate semiconductor layer being in contact with said superconducting thin film layer, and wherein said intermediate semiconductor layer comprises a compound semiconductor material, wherein said superconducting thin film layer is composed of a compound oxide of at least one element α selected from the IIa group of the Periodic Table, at least one element β selected from the IIIa group of the Periodic Table and at least one element γ selected from the group consisting of Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table and wherein said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: θ.sub.4 (Φ.sub.1-q,Ca.sub.q).sub.m Cu.sub.n O.sub.p+r in which θ stands for Bi or T1, Φ stands for Sr when θ is Bi and stands for Ba when θ is T1, m and n are numbers each satisfying ranges of 6≦m≦10 and 4≦n≦8 respectively, p=(6+m+n), Φ is a number which satisfies a range of 0<q<1, and r is a number which satisfies a range of -2≦r≦+2, and wherein Θ is Bi, Φ is Sr, and wherein said compound semiconductor material of said intermediate semiconductor layer is GaAs.

Claim 12

A semiconductor substrate structure comprising: a silicon substrate; a superconducting thin film layer composed of compound oxide; and an intermediate semiconductor layer interposed between said silicon substrate and said superconducting thin film layer, a first side of said intermediate semiconductor layer being in contact with said substrate and a second side of said intermediate semiconductor layer being in contact with said superconducting thin film layer, and wherein said intermediate semiconductor layer comprises a compound semiconductor material, wherein said superconducting thin film layer is composed of a compound oxide of at least one element α selected from the IIa group of the Periodic Table, at least one element β selected from the IIIa group of the Periodic Table and at least one element γ selected from the group consisting of Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table and wherein said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: θ.sub.4 (Φ.sub.1-q,Ca.sub.q).sub.m Cu.sub.n O.sub.p+r in which θ stands for Bi or T1, Φ stands for Sr when θ is Bi and stands for Ba when θ is T1, m and n are numbers each satisfying ranges of 6≦m≦10 and 4≦n≦8 respectively, p=(6+m+n), Φ is a number which satisfies a range of 0<q<1, and r is a number which satisfies a range of -2≦r≦+2, and wherein Θ is Bi, Φ is Sr, and wherein said compound semiconductor material of said intermediate semiconductor layer is GaAs.