US5627012A
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Method for preparing phase change optical recording medium
Assignee: TDK Corp
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Filing: 1996-02-09
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Granted: 1997-05-06
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Expires: 2016-02-09
Abstract
Abstract An optical recording medium is prepared by forming on a substrate a phase change recording layer comprising elements A, B, C and optional D wherein A is silver and/or gold, B is antimony and/or bismuth, C is tellurium and/or selenium, D is indium or a mixture of indium and aluminum and/or phosphorus. Formation of the recording layer is carried out by the step of sputtering an A-C base metal and the step of sputtering a B base metal optionally containing D in this successive order or reverse order; or by the step of sputtering an A-C base metal, the step of sputtering a B base metal, and the step of sputtering a D base metal in this successive order or reverse order. Since the resulting recording layer is already crystallized, the method eliminates a need for extra initialization.
Inventors
- 👤 Junji Tominaga
- 👤 Ryo Inaba
- 👤 Susumu Haratani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:26
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0623; G; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/242; G11B7/243; G11B7/26; G11B2007/24302; G11B2007/24308; G11B2007/2431; G11B2007/24314; G11B2007/24316; G11B7/004; G11B7/0045; G11B7/00454; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
133 words
A method for preparing an optical recording medium comprising the step of forming a phase change recording layer on a substrate, said recording layer comprising a recording material containing elements A, B and C, wherein A is at least one element of silver and gold, B is at least one element of antimony and bismuth, and C is at least one element of tellurium and selenium, said recording layer having a thickness of 100 to 500Å, said recording layer forming step including successively manner the step of sputtering from an A--C base metal target composed mainly of elements A and C and the step of sputtering from a B base metal target composed mainly of element B, and the method being free of a separate step for crystallizing the recording layer for initialization.
Claim 2
Independent Claim
133 words
A method for preparing an optical recording medium comprising the step of forming a phase change recording layer on a substrate, said recording layer comprising a recording material containing elements A, B and C, wherein A is at least one element of silver and gold, B is at least one element of antimony and bismuth, and C is at least one element of tellurium and selenium, said recording layer having a thickness of 100 to 500Å, said recording layer forming step including successively manner the step of sputtering from an A--C base metal target composed mainly of elements A and C and the step of sputtering from a B base metal target composed mainly of element B, and the method being free of a separate step for crystallizing the recording layer for initialization.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein said B base metal target contains element D wherein D is indium or a mixture of indium and at least one of aluminum and phosphorus.
Claim 4
Dependent Claim
47 words
The method of claim 2 wherein at least one of said A--C base metal target and said B base metal target further contains M wherein M is at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mn, W, and Mo.
Claim 5
Dependent Claim
45 words
The method of claim 1 wherein said recording layer forming step includes subsequently the step of sputtering a D base metal target composed mainly of element D, wherein D is indium or a mixture of indium and at least one element of aluminum and phosphorous.
Claim 6
Dependent Claim
52 words
The method of claim 4 wherein at least one of said A--C base metal target, said B base metal target, and said D base metal target further contains M wherein M is at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mn, W, and Mo.
Claim 7
Dependent Claim
140 words
The method of claim 1 wherein said recording material is of the formula: A.sub.a B.sub.b C.sub.c D.sub.d M.sub.e wherein A is at least one element of silver and gold, B is at least one element of antimony and bismuth, C is at least one element of tellurium and selenium, D is indium or a mixture of indium and at least one of aluminum and phosphorus, M is at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mn, W, and Mo, letters a, b, c, d, and e represent atomic ratios and fall in the range: ______________________________________
3.0 ≦ a ≦ 13.0,
45.0 ≦ b ≦ 87.0,
8.0 ≦ c ≦ 34.0,
2.0 ≦ d ≦ 8.0,
0 ≦ e ≦ 5.0,
a + b + c + d + e = 100.
______________________________________
Claim 8
Dependent Claim
14 words
The method of claim 6 wherein the recording layer contains an ABC 2 phase.
Claim 9
Dependent Claim
13 words
The method of claim 6 wherein the recording layer contains a B phase.
Claim 10
Dependent Claim
13 words
The method of claim 6 wherein the recording layer contains a D--C phase.
Claim 11
Independent Claim
120 words
A method for preparing an optical recording medium comprising the step of forming a phase change recording layer on a substrate, said recording layer comprising a recording material containing element B and a low Tx metal wherein B is at least one element of antimony and bismuth, said recording layer having a thickness of 100 to 500Å, said recording layer forming step including successively the step of sputtering from a B base metal target composed mainly of element B and the step of sputtering from a low Tx metal target composed mainly of a metal element having a lower crystallization temperature than said element B, and the method being free of a step for crystallizating the recording layer for initialization.
Claim 12
Independent Claim
120 words
A method for preparing an optical recording medium comprising the step of forming a phase change recording layer on a substrate, said recording layer comprising a recording material containing element B and a low Tx metal wherein B is at least one element of antimony and bismuth, said recording layer having a thickness of 100 to 500Å, said recording layer forming step including successively the step of sputtering from a B base metal target composed mainly of element B and the step of sputtering from a low Tx metal target composed mainly of a metal element having a lower crystallization temperature than said element B, and the method being free of a step for crystallizating the recording layer for initialization.
Claim 13
Dependent Claim
49 words
The method of claim 10 wherein said recording layer forming step further includes subsequent a successive step to said B base metal target sputtering step, the step of sputtering a high Tx metal target composed mainly of a metal element having a higher crystallization temperature than said element B.
Claim 14
Dependent Claim
140 words
The method of claim 10 wherein said recording material is of the formula: A.sub.a B.sub.b C.sub.c D.sub.d M.sub.e wherein A is at least one element of silver and gold, B is at least one element of antimony and bismuth, C is at least one element of tellurium and selenium, D is indium or a mixture of indium and at least one of aluminum and phosphorus, M is at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Mn, W, and Mo, letters a, b, c, d, and e represent atomic ratios and fall in the range: ______________________________________
3.0 ≦ a ≦ 13.0,
45.0 ≦ b ≦ 87.0,
8.0 ≦ c ≦ 34.0,
2.0 ≦ d ≦ 8.0,
0 ≦ e ≦ 5.0,
a + b + c + d + e = 100.
______________________________________
Claim 15
Dependent Claim
14 words
The method of claim 12 wherein the recording layer contains an ABC 2 phase.
Claim 16
Dependent Claim
13 words
The method of claim 12 wherein the recording layer contains a B phase.
Claim 17
Dependent Claim
13 words
The method of claim 12 wherein the recording layer contains a D--C phase.
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