US6468923B1 — Method of producing semiconductor member

Claim 1

Independent Claim 153 words

A method of producing a semiconductor member, said method comprising: a first step of preparing a first member, the first member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first member onto a second member, wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2, wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output, wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.

Claim 2

Independent Claim 153 words

A method of producing a semiconductor member, said method comprising: a first step of preparing a first member, the first member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first member onto a second member, wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2, wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output, wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.

Claim 3

Dependent Claim 68 words

A method of producing a semiconductor member according to claim 1 , wherein the first member has the non-porous layer on the semiconductor substrate through a separation layer, and the second step includes a step of bonding the first and second members to each other while positioning the non-porous layer inside the SOI wafer to form a multilayer structure and separating the multilayer structure at the separation layer.

Claim 4

Dependent Claim 38 words

A method of producing a semiconductor member according to claim 1 , wherein the use other than that of the first and second steps is selling the semiconductor substrate separated from the non-porous layer in the second step.

Claim 5

Dependent Claim 26 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the semiconductor substrate has an epitaxial layer on a surface thereof.

Claim 6

Dependent Claim 24 words

A method of producing a semiconductor member according to claim 4 , wherein the semiconductor substrate has a different resistivity than the epitaxial layer.

Claim 7

Dependent Claim 40 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the semiconductor substrate has a first epitaxial layer and a second epitaxial layer on a surface thereof in this order from the semiconductor substrate side.

Claim 8

Dependent Claim 30 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the semiconductor substrate has a semiconductor layer doped with a dopant on a surface thereof.

Claim 9

Dependent Claim 39 words

A method of producing a semiconductor member according to claim 2 , wherein the separation layer is a porous layer formed by anodization of a non-porous region, or an ion-implanted layer formed by implanting ions into a non-porous region.

Claim 10

Dependent Claim 24 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the non-porous layer is a non-porous single-crystalline silicon layer.

Claim 11

Dependent Claim 38 words

A method of producing a semiconductor member according to claim 2 , wherein after forming an insulating layer on the non-porous layer, the insulating layer and the second-member are bonded to each other to form the multilayer structure.

Claim 12

Dependent Claim 32 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein a device is formed on the non-porous layer and the device is transferred onto the second member.

Claim 13

Dependent Claim 23 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the non-porous layer comprises a plurality of layers.

Claim 14

Dependent Claim 72 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the step of preparing the first member includes: a step of forming a first epitaxial semiconductor layer on the semiconductor substrate; a step of making at least a part of the first epitaxial semiconductor layer porous to a porous layer; and a step of forming the non-porous layer on the porous layer, therein preparing the first member.

Claim 15

Dependent Claim 40 words

A method of producing a semiconductor member according to claim 13 , wherein the porous layer is formed so that a thickness of a portion not made porous in the first epitaxial semiconductor layer is 100 nm to 20 μm.

Claim 16

Dependent Claim 22 words

A method of producing a semiconductor member according to claim 13 , wherein the semiconductor substrate is a high-concentration p-type semiconductor substrate.

Claim 17

Dependent Claim 33 words

A method of producing a semiconductor member according to claim 13 , wherein the first epitaxial semiconductor layer has a boron concentration of 1×10 17 cm −3 to 1×10 20 cm −3 .

Claim 18

Dependent Claim 102 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the step of preparing the first member includes: a step of forming, on the semiconductor substrate, a first semiconductor layer which is an epitaxial layer, a second semiconductor layer different in impurity concentration and/or conductivity type from the first semiconductor layer in this order from the semiconductor substrate side; a step of making at least a part of the first and second semiconductor layers porous to form a porous layer; and a step of forming the non-porous layer on the porous layer, thereby preparing the first member.

Claim 19

Dependent Claim 69 words

A method of producing a semiconductor member according to claim 17 , wherein the semiconductor substrate is a p-type semiconductor substrate, and wherein the first semiconductor layer has a concentration of an impurity for controlling a p-type conductivity smaller than that of the semiconductor substrate, and the second semiconductor layer has a concentration of an impurity for controlling a p-type conductivity larger than that of the first semiconductor layer.

Claim 20

Dependent Claim 27 words

A method of producing a semiconductor member according to claim 17 , wherein the porous layer comprises a plurality of layers having different porosities from each other.

Claim 21

Dependent Claim 55 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the step of preparing the first member includes: a step of forming a first epitaxial semiconductor layer on the semiconductor substrate; and a step of forming an ion-implanted layer inside the first epitaxial semiconductor layer, thereby preparing the first member.

Claim 22

Dependent Claim 43 words

A method of producing a semiconductor member according to claim 20 , wherein a position of the ion-implanted layer is determined to be a position of 100 nm to 20 μm away from the semiconductor substrate side inside the first epitaxial semiconductor layer.

Claim 23

Dependent Claim 33 words

A method of producing a semiconductor member according to claim 20 , wherein the first epitaxial semiconductor layer has a boron concentration of 1×10 17 cm −3 to 1×10 20 cm −3 .

Claim 24

Dependent Claim 87 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the step of preparing the first member includes: a step of forming, on the semiconductor substrate, a first semiconductor layer which is an epitaxial layer, a second semiconductor layer different in impurity concentration or conductivity type from the first semiconductor layer in this order from the semiconductor substrate side; and a step of forming an ion-implanted layer inside the first semiconductor layer and/or the second semiconductor layer, thereby preparing the first member.

Claim 25

Dependent Claim 69 words

A method of producing a semiconductor member according to claim 23 , wherein the semiconductor substrate is a p-type semiconductor substrate, and wherein the first semiconductor layer has a concentration of an impurity for controlling a p-type conductivity smaller than that of the semiconductor substrate, and the second semiconductor layer has a concentration of an impurity for controlling a p-type conductivity larger than that of the first semiconductor layer.

Claim 26

Dependent Claim 39 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the second step includes a step of bonding the non-porous layer to the second member and separating the non-porous layer from the first member.

Claim 27

Dependent Claim 42 words

A method of producing a semiconductor member according to claim 1 or 2 , wherein the second step comprises flattening and/or smoothing a surface of the semiconductor substrate obtained by separating the non-porous layer from the first member in the second step.

Claim 28

Dependent Claim 28 words

A method of producing a semiconductor member according to claim 26 , wherein the flattening and/or smoothing is conducted by surface-polishing, etching and heat-treating of the semiconductor substrate.

Claim 29

Dependent Claim 18 words

A method of producing a semiconductor member according to claim 27 , wherein the heat-treating is hydrogen annealing.

Claim 30

Dependent Claim 39 words

A method of producing a semiconductor member according to claim 28 , wherein a temperature of the hydrogen annealing is not lower than 800° C. but not higher than a melting point of a material constituting the semiconductor substrate.

Claim 31

Dependent Claim 28 words

A method of producing a semiconductor member according to claim 26 , further comprising a step of forming an epitaxial layer on the flattened and/or smoothed semiconductor substrate.

Claim 32

Dependent Claim 59 words

A method of producing a semiconductor member according to claim 1 or 2 , further comprising an inspection step of conducting at least one of surface particle inspection, thickness distribution, defect density inspection, surface shape inspection or edge inspection, after a surface flattening and/or smoothing treatment of the semiconductor substrate used n times in production of the semiconductor member.

Claim 33

Dependent Claim 38 words

A method of producing a semiconductor member according to claim 31 , wherein in the inspection step, the semiconductor substrate is selected for use as a dummy wafer, a monitor wafer, a prime wafer or an epitaxial wafer.

Claim 34

Dependent Claim 64 words

A method of producing a semiconductor member according to claim 1 , wherein the value n can be determined by subjecting the semiconductor substrate, which is obtained by separating the non-porous layer from the first member in the second step, to an inspection step of conducting at least one of surface particle inspection, thickness distribution, defect density inspection, surface shape inspection or edge inspection.

Claim 35

Dependent Claim 62 words

A method of producing a semiconductor member according to claim 33 , wherein the semiconductor member is an SOI wafer, and wherein after the semiconductor substrate is used in the first and second steps two times or more, the semiconductor substrate is used to produce an epitaxial wafer for an use other than that of the method of producing the semiconductor member.

Claim 36

Dependent Claim 51 words

A method of producing a semiconductor member according to claim 1 , wherein the use other than that of the first and second steps is conducted for production of epitaxial wafer, and wherein n is defined by the number of ordered sheets of epitaxial wafer which is recorded in a computer.

Claim 37

Dependent Claim 44 words

A method of producing a semiconductor member according to claim 35 , wherein the epitaxial wafer has an epitaxial layer with a concentration of an impurity for controlling a p-type conductivity smaller than that of the semiconductor substrate on a high-concentration p-type semiconductor substrate.

Claim 38

Dependent Claim 39 words

A method of producing a semiconductor member according to claim 1 , wherein the semiconductor substrate is a high-concentration p-type semiconductor substrate, and wherein the use other than that of the first and second steps is an epitaxial wafer.

Claim 39

Dependent Claim 44 words

A method of producing a semiconductor member according to claim 37 , wherein the epitaxial wafer has an epitaxial layer with a concentration of an impurity for controlling a p-type conductivity smaller than that of the semiconductor substrate on a high-concentration p-type semiconductor substrate.

Claim 40

Dependent Claim 38 words

A method of producing a semiconductor member according to claim 1 , wherein the use other than that of the first and second steps is a dummy wafer, a monitor wafer, or a wafer for producing a device.

Claim 41

Independent Claim 159 words

A system of producing two kinds of semiconductor members, said system comprising: a first step of preparing a first semiconductor member, the first semiconductor member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first semiconductor member onto a second semiconductor member, wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2, wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output, wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.

Claim 42

Independent Claim 159 words

A system of producing two kinds of semiconductor members, said system comprising: a first step of preparing a first semiconductor member, the first semiconductor member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first semiconductor member onto a second semiconductor member, wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2, wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output, wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.

Claim 43

Independent Claim 160 words

A method of controlling the production of a semiconductor member, said method comprising: a first step of preparing a first semiconductor member, the first semiconductor member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first semiconductor member onto a second semiconductor member, wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2, wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output, wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.

Claim 44

Independent Claim 160 words

A method of controlling the production of a semiconductor member, said method comprising: a first step of preparing a first semiconductor member, the first semiconductor member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first semiconductor member onto a second semiconductor member, wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n−1) times, where n is a natural number greater than or equal to 2, wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output, wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2005-10-21	2006-04-22	2006-10-22	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2009-10-21	2010-04-22	2010-10-22	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2013-10-21	2014-04-22	2014-10-22	$7700.00	Window Closed / Lapsed

Method of producing semiconductor member

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