US6036772A
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US
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Method for making semiconductor device
Assignee: Sony Corp
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Filing: 1997-12-29
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Granted: 2000-03-14
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Expires: 2017-12-29
Abstract
Abstract A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; wherein before depositing the Group II-VI compound semiconductor layer, a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the Group III-V compound semiconductor layer in a dose of 8×10 -4 Torr·sec or more.
Inventors
- 👤 Tomonori Hino
- 👤 Satoshi Taniguchi
- 👤 Satoshi Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/22; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3224; H10P14/3228; H10P14/3231; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
167 words
A method for making a semiconductor device comprising: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; wherein before depositing said Group II-VI compound semiconductor layer, a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the surface of said Group III-V compound semiconductor layer for a multiplet structure in the<110>direction on said surface observed by RHEED to change from a quadruplet pattern (4×) to a singlet pattern (1×).
Claim 2
Independent Claim
167 words
A method for making a semiconductor device comprising: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; wherein before depositing said Group II-VI compound semiconductor layer, a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the surface of said Group III-V compound semiconductor layer for a multiplet structure in the<110>direction on said surface observed by RHEED to change from a quadruplet pattern (4×) to a singlet pattern (1×).
Claim 3
Dependent Claim
22 words
A method for making a semiconductor device according to claim 1, wherein said Group III-V compound semiconductor layer comprises gallium and arsenic.
Claim 4
Dependent Claim
68 words
A method for making a semiconductor device according to claim 1, wherein before depositing said Group II-VI compound semiconductor layer, the dose of said particle beam composed of at least one Group II element is at least 1.5 times the dose which is applied for said multiplet structure in the<110>direction on said surface observed by RHEED to change from a quadruplet pattern (4×) to a singlet pattern (1×).
Claim 5
Dependent Claim
64 words
A method for making a semiconductor device according to claim 1, wherein said Group III-V compound semiconductor layer is deposited onto a Group III-V compound semiconductor substrate comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth.
Claim 6
Dependent Claim
26 words
A method for making a semiconductor device according to claim 1, wherein said Group III-V compound semiconductor layer has a thickness of 10 nm or more.
Claim 7
Dependent Claim
89 words
A method for making a semiconductor device according to claim 1, wherein a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and a particle beam composed of at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium are alternately radiated each at least one time, so as to deposit at least a portion, adjoining said Group III-V compound semiconductor layer, of said Group II-VI compound semiconductor layer.
Claim 8
Dependent Claim
89 words
A method for making a semiconductor device according to claim 1, wherein a particle beam composed of at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium is intermittently radiated at least one time while radiating a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury, so as to deposit at least a portion, adjoining said Group III-V compound semiconductor layer, of said Group II-VI compound semiconductor layer.
Claim 9
Dependent Claim
91 words
A method for making a semiconductor device according to claim 1, wherein the ratio by intensity of the dose of said particle beam composed of said Group II element to the dose of said particle beam composed of said Group VI element is 0.91 or more and 1.39 or less, and the ratio of the particle beams reaching the deposited surface is 0.64 or more and 0.98 or less, so as to deposit at least a portion, adjoining said Group III-V compound semiconductor layer, of said Group II-VI compound semiconductor layer.
Claim 10
Dependent Claim
33 words
A method for making a semiconductor device according to claim 1, wherein the surface of said III-V compound semiconductor is rearranged to a (2×4) stabilized-arsenic surface observed by RHEED by adjusting the temperature.
Claim 11
Independent Claim
196 words
A method for making a semiconductor device comprising: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; wherein before depositing said Group II-VI compound semiconductor layer, the surface of said III-V compound semiconductor is rearranged to a (2×2) stabilized-phosphorus surface or a (2×4) stabilized-phosphorus surface observed by RHEED, and then a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the surface of said Group III-V compound semiconductor layer for a multiplet structure in the<110>direction on said surface observed by RHEED to change from a doublet pattern (2×) or a quadruplet pattern (4×) to a singlet pattern (1×).
Claim 12
Independent Claim
196 words
A method for making a semiconductor device comprising: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; wherein before depositing said Group II-VI compound semiconductor layer, the surface of said III-V compound semiconductor is rearranged to a (2×2) stabilized-phosphorus surface or a (2×4) stabilized-phosphorus surface observed by RHEED, and then a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium and mercury is radiated onto the surface of said Group III-V compound semiconductor layer for a multiplet structure in the<110>direction on said surface observed by RHEED to change from a doublet pattern (2×) or a quadruplet pattern (4×) to a singlet pattern (1×).
Claim 13
Dependent Claim
22 words
A method for making a semiconductor device according to claim 10, wherein said Group III-V compound semiconductor layer comprises indium and phosphorus.
Claim 14
Dependent Claim
22 words
A method for making a semiconductor device according to claim 10, wherein said Group III-V compound semiconductor layer comprises gallium and arsenic.
Claim 15
Dependent Claim
68 words
A method for making a semiconductor device according to claim 10, wherein before depositing said Group II-VI compound semiconductor layer, the dose of said particle beam composed of at least one Group II element is at least 1.5 times the dose which is applied for said multiplet structure in the<110>direction on said surface observed by RHEED to change from a quadruplet pattern (4×) to a singlet pattern (1×).
Claim 16
Dependent Claim
64 words
A method for making a semiconductor device according to claim 10, wherein said Group III-V compound semiconductor layer is deposited onto a Group III-V compound semiconductor substrate comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth.
Claim 17
Dependent Claim
26 words
A method for making a semiconductor device according to claim 10, wherein said Group III-V compound semiconductor layer has a thickness of 10 nm or more.
Claim 18
Dependent Claim
89 words
A method for making a semiconductor device according to claim 10, wherein a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and a particle beam composed of at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium are alternately radiated each at least one time, so as to deposit at least a portion, adjoining said Group III-V compound semiconductor layer, of said Group II-VI compound semiconductor layer.
Claim 19
Dependent Claim
89 words
A method for making a semiconductor device according to claim 10, wherein a particle beam composed of at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium is intermittently radiated at least one time while radiating a particle beam composed of at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury, so as to deposit at least a portion, adjoining said Group III-V compound semiconductor layer, of said Group II-VI compound semiconductor layer.
Claim 20
Dependent Claim
91 words
A method for making a semiconductor device according to claim 10, wherein the ratio by intensity of the dose of said particle beam composed of said Group II element to the dose of said particle beam composed of said Group VI element is 0.91 or more and 1.39 or less, and the ratio of the particle beams reaching the deposited surface is 0.64 or more and 0.98 or less, so as to deposit at least a portion, adjoining said Group III-V compound semiconductor layer, of said Group II-VI compound semiconductor layer.
Claim 21
Dependent Claim
38 words
A method for making a semiconductor device according to claim 10, wherein the surface of said III-V compound semiconductor is rearranged to a (2×2) stabilized-phosphorus surface or a (2×4) stabilized-phosphorus surface observed by RHEED by adjusting the temperature.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |