US5705831A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method
Assignee: Panasonic Holdings Corp
•
Filing: 1995-04-03
•
Granted: 1998-01-06
•
Expires: 2015-04-03
Abstract
Abstract According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn 1-x Cd x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.
Inventors
- 👤 Nobuyuki Uemura
- 👤 Minoru Kubo
- 👤 Yoichi Sasai
- 👤 Kazuhiro Ohkawa
- 👤 Satoshi Kamiyama
- 👤 Takeshi Uenoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:26
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; B; B82; B82Y; B82Y20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
150 words
A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate, wherein the semiconductor multi-layered structure comprises a Zn 1-x Cd x S y Se 1-y (0<x≦1 and 0≦y≦1) active layer and a pair of Zn 1-x' Cd x' S y' Se 1-y' (0<x'≦1 and 0≦y'≦1) guiding layers interposing the active layer; a mole fraction (x) of Cd in the active layer is larger than a mole fraction (x') of Cd in the guiding layers; a mole fraction (y) of S in the active layer is smaller than a mole fraction (y') of S in the guiding layers; a type I hetero junction is formed between the active layer and the guiding layers; and between the active layer and the guiding layers, a band offset of a valence band ΔEv and an entire band offset ΔEg satisfies a relationship of ΔEv/ΔEg>0.32.
Claim 2
Dependent Claim
150 words
A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate, wherein the semiconductor multi-layered structure comprises a Zn 1-x Cd x S y Se 1-y (0<x≦1 and 0≦y≦1) active layer and a pair of Zn 1-x' Cd x' S y' Se 1-y' (0<x'≦1 and 0≦y'≦1) guiding layers interposing the active layer; a mole fraction (x) of Cd in the active layer is larger than a mole fraction (x') of Cd in the guiding layers; a mole fraction (y) of S in the active layer is smaller than a mole fraction (y') of S in the guiding layers; a type I hetero junction is formed between the active layer and the guiding layers; and between the active layer and the guiding layers, a band offset of a valence band ΔEv and an entire band offset ΔEg satisfies a relationship of ΔEv/ΔEg>0.32.
Claim 3
Dependent Claim
50 words
A semiconductor light-emitting device according to claim 1, wherein the multi-layered structure comprises a pair of II-VI compound semiconductor cladding layers interposing The active layer and the pair of guiding layers; and the active layer, the pair of guiding layers and the pair of cladding layers form a separate-confinement heterostructure.
Claim 4
Dependent Claim
24 words
A semiconductor light-emitting device according to claim 1, wherein at least one of the active layer and the guiding layers has a superlattice structure.
Claim 5
Dependent Claim
46 words
A semiconductor light-emitting device according to claim 3, wherein the active layer is formed by a Zn 1-x Cd x Se layer, and at least one of the pair of guiding layers is formed by a superlattice layer comprising a Zn 1-x Cd x Se layer.
Claim 6
Dependent Claim
36 words
A semiconductor light-emitting device according to claim 3, wherein the superlattice structure is a (Zn 1-x Cd x Se) m (ZnS y" Se 1-y" ) n superlattice layer (0<y'≦1 and where m and n are integers).
Claim 7
Dependent Claim
53 words
A semiconductor light-emitting device according to claim 3, wherein at least one of the active layer and the guiding layers is formed by a (Zn 1-a Cd a S b Se 1-b ) m (Zn 1-c Cd d Se 1-d ) n superlattice (0<a≦1, 0<b≦1, 0<c≦1, 0<d≦1, where m and n are integers).
Claim 8
Dependent Claim
38 words
A semiconductor light-emitting device according to claim 1, wherein at least one of the pair of guiding layers is formed by a superlattice layer, the superlattice layer comprising a ZnSe layer, a CdSe layer and a ZnS layer.
Claim 9
Dependent Claim
29 words
A semiconductor light-emitting device according to claim 7, wherein the superlattice layer is a (ZnSe) m (CdSe) n (ZnS) l superlattice layer (where m, n and l are integers).
Claim 10
Dependent Claim
150 words
A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate, wherein the semiconductor multi-layered structure comprises a Zn 1-x Cd x Se 1-y S y (0<x<0.5 and 0<y<0.5) active layer and a pair of Zn 1-x' Cd x' S y' Se 1-y' (0<x'<0.5 and 0<y'<0.5) guiding layers interposing the active layer; a mole fraction of Cd (x) in the active layer is larger than a mole fraction of Cd (x') in the guiding layers; a mole fraction of S (y) in the active layer is smaller than a mole fraction of S (y') in the guiding layers; a type I hetero junction is formed between the active layer and the guiding layers; and between the active layer and the guiding layers, a band offset of a valence band ΔEv and an entire band offset ΔEg satisfies a relationship of ΔEv/ΔEg>0.32.
Claim 11
Dependent Claim
150 words
A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate, wherein the semiconductor multi-layered structure comprises a Zn 1-x Cd x Se 1-y S y (0<x<0.5 and 0<y<0.5) active layer and a pair of Zn 1-x' Cd x' S y' Se 1-y' (0<x'<0.5 and 0<y'<0.5) guiding layers interposing the active layer; a mole fraction of Cd (x) in the active layer is larger than a mole fraction of Cd (x') in the guiding layers; a mole fraction of S (y) in the active layer is smaller than a mole fraction of S (y') in the guiding layers; a type I hetero junction is formed between the active layer and the guiding layers; and between the active layer and the guiding layers, a band offset of a valence band ΔEv and an entire band offset ΔEg satisfies a relationship of ΔEv/ΔEg>0.32.
Claim 12
Dependent Claim
128 words
A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate, wherein the semiconductor multi-layered structure comprises a pair of guiding layers interposing an active layer, at least one of the guiding layers being formed by a (Zn 1-x Cd x Se) m (ZnS y Se 1-y ) n superlattice (where m and n are integers); the active layer is formed of Zn 1-u Cd u S v Se 1-v (where 0<u<1, 0<v<1, x<u and y>v); a type I hetero junction is formed between the active layer and the guiding layers; and between the active layer and the guiding layers, a band offset of a valence band ΔEv and an entire band offset ΔEg satisfies a relationship of ΔEv/ΔEg>0.32.
Claim 13
Dependent Claim
128 words
A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate, wherein the semiconductor multi-layered structure comprises a pair of guiding layers interposing an active layer, at least one of the guiding layers being formed by a (Zn 1-x Cd x Se) m (ZnS y Se 1-y ) n superlattice (where m and n are integers); the active layer is formed of Zn 1-u Cd u S v Se 1-v (where 0<u<1, 0<v<1, x<u and y>v); a type I hetero junction is formed between the active layer and the guiding layers; and between the active layer and the guiding layers, a band offset of a valence band ΔEv and an entire band offset ΔEg satisfies a relationship of ΔEv/ΔEg>0.32.
References Cited (Backward Citations)
US5291506A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-05 | 2001-07-07 | 2002-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-05 | 2005-07-07 | 2006-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-05 | 2009-07-07 | 2010-01-06 | $7700.00 | Window Closed / Lapsed |