US5372970A
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Method for epitaxially growing a II-VI compound semiconductor
Assignee: Panasonic Holdings Corp
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Filing: 1993-06-23
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Granted: 1994-12-13
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Expires: 2013-06-23
Abstract
Abstract A method for epitaxially growing a II-VI compound semiconductor according to this invention comprises the steps of epitaxially growing a GaAs x Se 1-x layer on a GaAs substrate and epitaxially growing a ZnSe layer or a compound semiconductor layer including ZnSe on the GaAs x Se 1-x layer. This method provides a II-VI compound semiconductor in which a strain caused by a lattice mismatch is prevented and the hetero interface is excellent.
Inventors
- 👤 Minoru Kubo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3236; H10P14/3242; H10P14/3244; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3431; H10P14/3436; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S438/00; Y10S438/936; Y10S438/938
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
91 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as n-type an impurity, doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion being approximately 10 21 cm -3 ; epitaxially growing a GaAs x Se 1-x layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the GaAs x Se 1-x layer.
Claim 2
Independent Claim
91 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as n-type an impurity, doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion being approximately 10 21 cm -3 ; epitaxially growing a GaAs x Se 1-x layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the GaAs x Se 1-x layer.
Claim 3
Dependent Claim
33 words
A method according to claim 1, wherein the density of the Se on the uppermost portion of the GaAs layer is in the range of from 1 to 5×10 21 cm -3 .
Claim 4
Independent Claim
92 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as an n-type impurity, a doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion is approximately 10 21 cm -3 ; epitaxially growing a GaAs x Se 1-x layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the GaAs x Se 1-x layer.
Claim 5
Independent Claim
92 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as an n-type impurity, a doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion is approximately 10 21 cm -3 ; epitaxially growing a GaAs x Se 1-x layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the GaAs x Se 1-x layer.
Claim 6
Independent Claim
53 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a Ga 2 Se 3 layer on a GaAs substrate; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the Ga 2 Se 3 layer.
Claim 7
Independent Claim
53 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a Ga 2 Se 3 layer on a GaAs substrate; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the Ga 2 Se 3 layer.
Claim 8
Dependent Claim
66 words
A method according to claim 4, wherein the compound semiconductor layer including ZnSe is a II-VI compound semiconductor comprising ZnSe and at least one selected from the group consisting of Cd and Hg belonging to the group IIB; Be, Mg, Ca, Sr, Bi and Mn belonging to the group IIA; S, Se and Te belonging to the group VI; and Mn belonging to the group VIIB.
Claim 9
Independent Claim
91 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as an n-type impurity, doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion being approximately 10 21 cm -3 ; epitaxially growing a Ga 2 Se 3 layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the Ga 2 Se 3 layer.
Claim 10
Independent Claim
91 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as an n-type impurity, doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion being approximately 10 21 cm -3 ; epitaxially growing a Ga 2 Se 3 layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the Ga 2 Se 3 layer.
Claim 11
Dependent Claim
33 words
A method according to claim 6, wherein the density of the Se on the uppermost portion of the GaAs layer is in the range of from 1 to 5×10 21 cm -3 .
Claim 12
Independent Claim
92 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as an n-type impurity, a doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion is approximately 10 21 cm -3 ; epitaxially growing a Ga 2 Se 3 layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the Ga 2 Se 3 layer.
Claim 13
Independent Claim
92 words
A method for epitaxially growing a II-VI compound semiconductor comprising the steps of: epitaxially growing a GaAs layer while doping Se as an n-type impurity, a doping amount of the Se being gradually increased so that a density of the Se on the uppermost portion is approximately 10 21 cm -3 ; epitaxially growing a Ga 2 Se 3 layer on the GaAs layer; and epitaxially growing a layer selected from the group consisting of a ZnSe layer and a compound semiconductor layer including ZnSe on the Ga 2 Se 3 layer.
References Cited (Backward Citations)
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