US5707900A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of heat-treating semiconductor crystal of a group II-group VI compound
Assignee: Stanley Electric Co Ltd
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Filing: 1996-11-01
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Granted: 1998-01-13
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Expires: 2016-11-01
Abstract
Abstract Known MBE methods of heat-treating semiconductor crystal of a group II-group VI compound for crystal growth are accompanied by a problem of releasing the component elements during the heat-treatment to produce a coarse crystal surface that adversely affects the subsequent crystal growth steps. According to the invention, this problem is eliminated by irradiating a substrate of a group II-group VI compound, specifically ZnSe, with Zn beams and Se beams depending on the vapor pressures of the elements between the respective starting points and the respective terminating points to compensate the released Zn and Se so that consequently no oxide film is formed on the ZnSe substrate when the heat-treatment is completed to produce a plane crystal surface that is free from coarseness.
Inventors
- 👤 Michihiro Sano
- 👤 Keizo Kawaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/22; H10P14/2913; H10P14/2916; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3431
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
176 words
A method of heat-treating a substrate of semiconductor crystal of a group II-group VI compound for growing the semiconductor crystal of the group II-group VI compound by molecular beam epitaxial (MBE) method characterized in that it comprises steps of starting an irradiation of molecular beams of the component element having a higher vapor pressure when the evaporation initiating temperature of the element is reached and starting an irradiation of molecular beams of the component element having a lower vapor pressure when the evaporation initiating temperature of the element is reached in the heating phase of raising the temperature from room temperature to heat-treatment temperature, and terminating the irradiation of molecular beams of the component element having a lower vapor pressure when the evaporation initiating temperature of the element is reached and terminating the irradiation of molecular beams of the component element having a higher vapor pressure when the evaporation initiating temperature of the element is reached in the cooling phase of lowering the temperature from heat-treatment temperature to growth temperature after the completion of the heat-treatment.
Claim 2
Independent Claim
176 words
A method of heat-treating a substrate of semiconductor crystal of a group II-group VI compound for growing the semiconductor crystal of the group II-group VI compound by molecular beam epitaxial (MBE) method characterized in that it comprises steps of starting an irradiation of molecular beams of the component element having a higher vapor pressure when the evaporation initiating temperature of the element is reached and starting an irradiation of molecular beams of the component element having a lower vapor pressure when the evaporation initiating temperature of the element is reached in the heating phase of raising the temperature from room temperature to heat-treatment temperature, and terminating the irradiation of molecular beams of the component element having a lower vapor pressure when the evaporation initiating temperature of the element is reached and terminating the irradiation of molecular beams of the component element having a higher vapor pressure when the evaporation initiating temperature of the element is reached in the cooling phase of lowering the temperature from heat-treatment temperature to growth temperature after the completion of the heat-treatment.
Claim 3
Dependent Claim
31 words
A method of heat-treating a substrate of semiconductor crystal of a group II-group VI compound according to claim 1, wherein said semiconductor crystal of a group II-group VI compound is ZnSe.
Claim 4
Dependent Claim
31 words
A method of heat-treating a substrate of semiconductor crystal of a group II - group VI compound according to claim 2, wherein said heat-treatment temperature is not lower than 400° C.
Claim 5
Dependent Claim
29 words
A method of heat-treating a substrate of semiconductor crystal of a group II-group VI compound according to claim 1, wherein said heat-treatment temperature is not lower than 400° C.
References Cited (Backward Citations)
US4685979A
Cited
US4735910A
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US4965244A
Cited
US5354708A
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US5433170A
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US5492080A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-12 | 2001-07-14 | 2002-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-12 | 2005-07-14 | 2006-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-12 | 2009-07-14 | 2010-01-13 | $7700.00 | Window Closed / Lapsed |