US5492080A
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Crystal-growth method and semiconductor device production method using the crystal-growth method
Assignee: Panasonic Holdings Corp
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Filing: 1994-12-21
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Granted: 1996-02-20
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Expires: 2014-12-21
Abstract
Abstract A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn 1-Y Mg Y S Z Se 1-Z (0<Y>1 and 0<Z>1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Inventors
- 👤 Kazuhiro Ohkawa
- 👤 Tsuneo Mitsuyu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:39
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/002; C30B23/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
73 words
A crystal-growth method comprising the steps of: filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and growing a Zn 1-Y Mg Y S Z Se 1-Z (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 2
Dependent Claim
73 words
A crystal-growth method comprising the steps of: filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and growing a Zn 1-Y Mg Y S Z Se 1-Z (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 3
Dependent Claim
75 words
A crystal-growth method comprising the steps of: filling two materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other being a ZnS X' Se 1-X' (0<X'<1) alloy in their respective effusion cells, and growing a Zn 1-Y Mg Y S Z Se 1-Z (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 4
Dependent Claim
75 words
A crystal-growth method comprising the steps of: filling two materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other being a ZnS X' Se 1-X' (0<X'<1) alloy in their respective effusion cells, and growing a Zn 1-Y Mg Y S Z Se 1-Z (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 5
Dependent Claim
59 words
A crystal-growth method comprising the steps of: filling a Zn 1-Y' Mg Y' S Z' Se 1-Z' (0<Y'<1 and 0<Z'<1) alloy in an effusion cell, and growing a Zn 1-Y Mg Y' S Z' Se 1-Z' (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
Claim 6
Dependent Claim
59 words
A crystal-growth method comprising the steps of: filling a Zn 1-Y' Mg Y' S Z' Se 1-Z' (0<Y'<1 and 0<Z'<1) alloy in an effusion cell, and growing a Zn 1-Y Mg Y' S Z' Se 1-Z' (0<Y<1 and 0<Z<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
Claim 7
Dependent Claim
50 words
A crystal-growth method according to claim 3, wherein a Zn 1-Y Mg Y S Z Se 1-Z (0.05≦Y≦0.15 and 0.10≦Z≦0.25) single-crystalline thin film is grown on a heated substrate by filling a Zn 1-Y' Mg Y' S Z' Se 1-Z' (0.02Y'≦0.08 and 0.30≦Z'≦0.60) polycrystalline alloy in the above effusion cell.
Claim 8
Dependent Claim
46 words
A crystal-growth method comprising the steps of: filling ZnSe and ZnS compounds separately in their respective effusion cells, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 9
Dependent Claim
46 words
A crystal-growth method comprising the steps of: filling ZnSe and ZnS compounds separately in their respective effusion cells, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 10
Dependent Claim
47 words
A crystal-growth method comprising the steps of: filling a ZnS X' Se 1-X' (0<X'<1) alloy in an effusion cell, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
Claim 11
Dependent Claim
47 words
A crystal-growth method comprising the steps of: filling a ZnS X' Se 1-X' (0<X'<1) alloy in an effusion cell, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
Claim 12
Dependent Claim
37 words
A crystal-growth method according to claim 6, wherein a ZnS X Se 1-X (0.03≦X≦0.10) single-crystalline thin film is grown on a heated substrate by filling a ZnS X' Se 1-X' (0.08≦X≦0.40) polycrystalline alloy in an effusion cell.
Claim 13
Dependent Claim
64 words
A crystal-growth method comprising the steps of: filling two materials separately, one being selected from a group consisting of elemental Cd and CdSe compound, and the other being ZnSe compound, in their respective heating effusion cells and growing a Zn X CdSe 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 14
Dependent Claim
64 words
A crystal-growth method comprising the steps of: filling two materials separately, one being selected from a group consisting of elemental Cd and CdSe compound, and the other being ZnSe compound, in their respective heating effusion cells and growing a Zn X CdSe 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
Claim 15
Dependent Claim
49 words
A crystal-growth method comprising the steps of: filling a Zn 1-W' Cd W' Se (0<W'<1) alloy in an effusion cell, and growing a Zn 1-W Cd W Se (0<W<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
Claim 16
Dependent Claim
49 words
A crystal-growth method comprising the steps of: filling a Zn 1-W' Cd W' Se (0<W'<1) alloy in an effusion cell, and growing a Zn 1-W Cd W Se (0<W<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity.
Claim 17
Dependent Claim
24 words
A crystal-growth method according to claim 1, wherein the above heated substrate temperature is set in the range between 100° C. and 400° C.
Claim 18
Dependent Claim
24 words
A method for manufacturing a semiconductor device comprising a process of forming a single-crystalline thin film by a crystal-growth method according to claim 1.
Claim 19
Dependent Claim
102 words
A method for manufacturing a semiconductor device comprising the steps of: forming well layers made of Zn 1-W Cd W Se (0<W<1) single-crystalline thin films by using a crystal-growth method according to claim 8; and forming barrier layers made of ZnS X Se 1-X (0<X<1) single-crystalline thin films by using a crystal-growth method comprising the steps of filling ZnSe and ZnS compounds separately in their respective effusion cells, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities, thereby forming a multi-quantum-well active layer.
Claim 20
Dependent Claim
102 words
A method for manufacturing a semiconductor device comprising the steps of: forming well layers made of Zn 1-W Cd W Se (0<W<1) single-crystalline thin films by using a crystal-growth method according to claim 9; and forming barrier layers made of ZnS X Se 1-X (0<X<1) single-crystalline thin films by using a crystal-growth method comprising the steps of filling ZnSe and ZnS compounds separately in their respective effusion cells, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities, thereby forming a multi-quantum-well active layer.
Claim 21
Dependent Claim
103 words
A method for manufacturing a semiconductor device comprising the steps of: forming well layers made of Zn 1-W Cd W Se (0<W<1) single-crystalline thin films by using a crystal-growth method according to claim 8; and forming barrier layers made of ZnS X Se 1-X (0<X<1) single-crystalline thin films by using a crystal-growth method comprising the steps of filling a ZnS X' Se 1-X' (0<X'<1) alloy in an effusion cell, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity, thereby forming a multi-quantum-well active layer.
Claim 22
Dependent Claim
103 words
A method for manufacturing a semiconductor device comprising the steps of: forming well layers made of Zn 1-W Cd W Se (0<W<1) single-crystalline thin films by using a crystal-growth method according to claim 9; and forming barrier layers made of ZnS X Se 1-X (0<X<1) single-crystalline thin films by using a crystal-growth method comprising the steps of filling a ZnS X' Se 1-X' (0<X'<1) alloy in an effusion cell, and growing a ZnS X Se 1-X (0<X<1) single-crystalline thin film on a heated substrate by controlling the temperature of the effusion cell and the molecular beam intensity, thereby forming a multi-quantum-well active layer.
Claim 23
Dependent Claim
24 words
A crystal-growth method according to claim 2 wherein the above heated substrate temperature is set in the range between 100° C. and 400° C.
Claim 24
Dependent Claim
24 words
A crystal-growth method according to claim 3 wherein the above heated substrate temperature is set in the range between 100° C. and 400° C.
Claim 25
Dependent Claim
24 words
A method for manufacturing a semiconductor device comprising a process of forming a single-crystalline thin film by a crystal-growth method according to claim 2.
Claim 26
Dependent Claim
24 words
A method for manufacturing a semiconductor device comprising a process of forming a single-crystalline thin film by a crystal-growth method according to claim 3.
References Cited (Backward Citations)
JPS59190295A
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JPH01279598A
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US5057183A
Cited
JPH02285630A
Cited
EP0403110A1
Cited
US5028561A
Cited
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