US5057183A
Expired / Lapsed
US
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Process for preparing epitaxial II-VI compound semiconductor
Assignee: Sharp Corp
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Filing: 1989-12-05
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Granted: 1991-10-15
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Expires: 2009-12-05
Abstract
Abstract An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.
Inventors
- 👤 Yoshitaka Tomomura
- 👤 Masahiko Kitagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:01
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10D; H10D62/00; H10D62/80; H10D62/86; H10F; H10F71/00; H10F71/125; H10F71/1253; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2913; H10P14/2915; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3228; H10P14/3231; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3436; H10P14/3438; H10P14/3441; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
81 words
A process for preparing an epitaxial II-VI compound semiconductor containing sulfur as a VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam, the molecular beam epitaxy comprising the steps of heating solid sulfur at a first temperature to obtain a sulfur vapor with a suitable vapor pressure for the molecular beam epitaxy, and subsequently heating the sulfur vapor at a second temperature higher than said first temperature to produce the sulfur molecular beam.
Claim 2
Dependent Claim
81 words
A process for preparing an epitaxial II-VI compound semiconductor containing sulfur as a VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam, the molecular beam epitaxy comprising the steps of heating solid sulfur at a first temperature to obtain a sulfur vapor with a suitable vapor pressure for the molecular beam epitaxy, and subsequently heating the sulfur vapor at a second temperature higher than said first temperature to produce the sulfur molecular beam.
Claim 3
Dependent Claim
24 words
The process of claim 1 in which the heating of said solid sulfur is effected at a temperature of about 50° to 150° C.
Claim 4
Dependent Claim
22 words
The process of claim 1 in which the sulfur vapor has a vapor pressure of about 1×10 -7 to 1×10 -5 torr.
Claim 5
Dependent Claim
24 words
The process of claim 1 in which the heating of the sulfur vapor is effected at a temperature of about 400° to 1000° C.
Claim 6
Dependent Claim
17 words
The process of claim 1 in which the sulfur molecular beam is supplied through a Knudsen cell.
Claim 7
Dependent Claim
28 words
The process of claim 1 in which the II element molecular beam is selected from the group consisting of Zn, Cd, Hg, Be, Mg, Ca, Sr and Ba.
Claim 8
Dependent Claim
30 words
The process of claim 1 in which a molecular beam of a VI element other than sulfur or of a hetero element is further employed in the molecular beam epitaxy.
Claim 9
Dependent Claim
30 words
The process of claim 1 in which the epitaxial II-VI compound semiconductor is of ZnS, CdS, HgS, MgS, CaS, ZnCdS, ZnHgS, CaHgS, ZnSSe, CdSSe, ZnSTe, CdSTe, ZnCdSSe, MnS or ZnMnS.
Claim 10
Dependent Claim
17 words
The process of claim 1 which is used for producing a light-emitting layer of a luminescent device.
Claim 11
Dependent Claim
15 words
The process of claim 9 in which the light-emitting layer has a super lattice structure.
Claim 12
Dependent Claim
41 words
The process of claim 1, wherein said sulfur molecular beam and said II element molecular beam have intensities whereby the ratio of said sulfur molecular beam intensity to said II element molecular beam intensity is equal to about 3 or greater.
Claim 13
Dependent Claim
20 words
The process of claim 1, wherein said first temperature is a temperature near the evaporation temperature of said solid sulfur.
References Cited (Backward Citations)
US3152022A
Cited
US3929527A
Cited
US4058430A
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US4147571A
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US4159919A
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US4233092A
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US4383872A
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US4330360A
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US4575462A
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US4526809A
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US4757030A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-14 | 1995-04-15 | 1995-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-14 | 1999-04-15 | 1999-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-14 | 2003-04-15 | 2003-10-15 | $7700.00 | Window Closed / Lapsed |