US4685979A
Expired / Lapsed
US
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Method of manufacturing a group II-VI compound semiconductor device having a pn junction
Assignee: Individual
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Filing: 1984-07-31
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Granted: 1987-08-11
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Expires: 2004-07-31
Abstract
Abstract A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal substrate of n type from a melt of a crystal-constituting Group VI element other than Te; forming a crystal temperature difference in the melt which applying a vapor pressure of the Group VI element onto the melt; forming, on the substrate, a semiconductor region of p type by diffusing an acceptor impurity into the n type crystal under a predetermined vapor pressure of the constituent Group VI element. Thus, it becomes possible to provide light-emitting diodes emitting green, blue-green or violet color region if ZnSe crystals are used.
Inventors
- 👤 Jun-ichi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 09:09
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; C; C30; C30B; C30B19/00; C30B19/02; C30B19/04; C30B29/00; C30B29/10; C30B29/46; C30B29/48; C30B31/00; C30B31/02; H10H20/01; H10H20/011; H10H20/012; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/29; H10P14/2901; H10P14/2913; H10P14/2916; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3432; H10P14/3438; H10P14/3441; H10P14/3446; H10P32/00; H10P32/10; H10P32/12; H10P32/17; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
157 words
A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, comprising: growing a Group II-VI compound semiconductor crystal substrate having n type conductivity from a melt of a crystal-constituting Group VI elemeht other than Te and a Group II element; forming a temperature difference in said melt by establishing a higher temperature zone in the upper region of the melt and a lower temperature zone in the lower region of the melt while holding the temperatures of the two zones constant and while constantly applying a vapor pressure of said Group VI element onto said melt throughout the growth of the crystal; and forming, on said n type Group II-VI compound semiconductor crystal substrate, a semiconductor region of p type conductivity by diffusing an acceptor impurity into said n type Group II-VI compound semiconductor crystal under a predetermined vapor pressure of the crystal-constituting Group VI element.
Claim 2
Independent Claim
157 words
A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, comprising: growing a Group II-VI compound semiconductor crystal substrate having n type conductivity from a melt of a crystal-constituting Group VI elemeht other than Te and a Group II element; forming a temperature difference in said melt by establishing a higher temperature zone in the upper region of the melt and a lower temperature zone in the lower region of the melt while holding the temperatures of the two zones constant and while constantly applying a vapor pressure of said Group VI element onto said melt throughout the growth of the crystal; and forming, on said n type Group II-VI compound semiconductor crystal substrate, a semiconductor region of p type conductivity by diffusing an acceptor impurity into said n type Group II-VI compound semiconductor crystal under a predetermined vapor pressure of the crystal-constituting Group VI element.
Claim 3
Dependent Claim
34 words
A method according to claim 1, wherein: said acceptor impurity is one having a diffusion coefficient greater than of vacancy produced in said crystal during doping of said impurity, by diffusion, into said crystal.
Claim 4
Dependent Claim
40 words
A method according to claim 1, wherein: said n type Group II-VI compound semiconductor crystal substrate is ZnSe; said melt is Se and serves as a solvent; and said vapor of the crystal-constituting Group VI element is that of Se.
Claim 5
Dependent Claim
38 words
A method according to claim 3, wherein: the diffusion is conducted at a temperature lower than 600° C. under a vapor pressure of 0.1 Torr or more of Se, and said impurity is selected from gold and silver.
Claim 6
Dependent Claim
43 words
A method according to claim 1, wherein: said n type Group II-VI compound semiconductor crystal substrate is ZnSe; said melt is Se and serves as a solvent; said vapor of the crystal-constituting element is that of Se; and said acceptor impurity is gold.
Claim 7
Dependent Claim
23 words
A method according to claim 5, wherein: the diffusion of gold is conducted at a temperature ranging from 400° C. to 300° C.
Claim 8
Dependent Claim
35 words
A method according to claim 1, wherein: said temperature difference in said melt is about 40° C., and the temperature of the vapor portion of said melt is about from 950° C. to 990° C.
Claim 9
Independent Claim
180 words
A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal comprising: growing a Group II-VI compound semiconductor crystal substrate having n-type conductivity from the melt of the crystal-constituting Group VI element except Te, forming a temperature difference in said melt by establishing a higher temperature zone in the upper region of the melt and a lower temperature zone in the lower region of the melt while holding the temperature of the two zones constant and while constantly applying a vapor pressure of said Group VI element onto said melt throughout the growth of the crystal; forming, on said n-type Group II-VI compound semiconductor crystal substrate, a semiconductor region of p type conductivity by relying on liquid-phase epitaxial growth technique from the melt of the crystal-constituting Group VI element excepting Te; and forming a temperature difference in said melt while holding each portion of said melt at a constant temperature, and constantly applying a vapor pressure of said Group VI element onto said melt throughout the growth of the crystal.
Claim 10
Independent Claim
180 words
A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal comprising: growing a Group II-VI compound semiconductor crystal substrate having n-type conductivity from the melt of the crystal-constituting Group VI element except Te, forming a temperature difference in said melt by establishing a higher temperature zone in the upper region of the melt and a lower temperature zone in the lower region of the melt while holding the temperature of the two zones constant and while constantly applying a vapor pressure of said Group VI element onto said melt throughout the growth of the crystal; forming, on said n-type Group II-VI compound semiconductor crystal substrate, a semiconductor region of p type conductivity by relying on liquid-phase epitaxial growth technique from the melt of the crystal-constituting Group VI element excepting Te; and forming a temperature difference in said melt while holding each portion of said melt at a constant temperature, and constantly applying a vapor pressure of said Group VI element onto said melt throughout the growth of the crystal.
Claim 11
Dependent Claim
37 words
A method according to claim 8, wherein: said Group II-VI compound semiconductor crystal is ZnSe and said melt is Se serving as the solvent, and said vapor of the crystal-constituting Group VI element is that of Se.
Claim 12
Dependent Claim
44 words
A method according to claim 9, wherein: said Group II-VI compound semiconductor crystal substrate is grown at a temperature of about 40° C., and the upper portion of said melt is held at a temperature difference of about from 950° C. to 990° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-10 | 1991-02-09 | 1991-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-10 | 1995-02-09 | 1995-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-10 | 1999-02-09 | 1999-08-11 | $7700.00 | Window Closed / Lapsed |