US6524752B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Phase shift masking for intersecting lines
Assignee: Synopsys Inc
•
Filing: 2000-09-26
•
Granted: 2003-02-25
•
Expires: 2020-09-26
Abstract
Abstract Techniques are provided for extending the use of phase shift techniques to implementation of masks used for complex layouts in the layers of integrated circuits, beyond selected critical dimension features such as transistor gates to which such structures have been limited in the past. The method includes identifying features for which phase shifting can be applied, automatically mapping the phase shifting regions for implementation of such features, resolving phase conflicts which might occur according to a given design rule, and application of sub-resolution assist features within phase shift regions and optical proximity correction features to phase shift regions. Both opaque field phase shift masks and complementary binary masks defining interconnect structures and other types of structures that are not defined using phase shifting, necessary for completion of the layout of the layer are produced.
Inventors
- 👤 Christophe Pierrat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:20
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/30; G03F1/36
Claims Analysis
Total Claims: 100
Claim 1
Independent Claim
193 words
A method, comprising: identifying features of a pattern for a layer to be formed using a photolithographic mask, the pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; and laying out phase shift regions for the identified features to produce a phase shift mask, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and laying out a complementary mask including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 2
Independent Claim
193 words
A method, comprising: identifying features of a pattern for a layer to be formed using a photolithographic mask, the pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; and laying out phase shift regions for the identified features to produce a phase shift mask, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and laying out a complementary mask including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 3
Dependent Claim
22 words
The method of claim 1 , including an opaque feature in the one corner between the first and second phase shift regions.
Claim 4
Dependent Claim
27 words
The method of claim 1 , said step of identifying features includes reading a layout file which identifies features of the pattern, and processing the layout file.
Claim 5
Dependent Claim
49 words
The method of claim 1 , wherein said phase shift mask includes an opaque field, and said phase shift regions include a plurality of transparent regions having said first phase within said opaque field, and a plurality of complementary transparent regions having said second phase within said opaque field.
Claim 6
Dependent Claim
22 words
The method of claim 1 , wherein said first phase is 180 degrees out of phase with respect to said second phase.
Claim 7
Dependent Claim
28 words
The method of claim 1 , including laying out a complementary mask comprising opaque regions and transparent regions defining features having dimensions greater than the particular feature size.
Claim 8
Dependent Claim
22 words
The method of claim 1 , including adding sub-resolution features inside one or more phase shift regions in the phase shift mask.
Claim 9
Dependent Claim
40 words
The method of claim 1 , including dividing a phase shift region having a first phase into first and second phase shift regions having the first phase and adding a sub-resolution feature between the first and second phase shift regions.
Claim 10
Dependent Claim
42 words
The method of claim 1 , including adding sub-resolution features inside a particular phase shift region in the phase shift mask, where the particular phase shift region has a perimeter and the sub-resolution feature is inside and does not contact said perimeter.
Claim 11
Dependent Claim
15 words
The method of claim 1 , including adding sub-resolution features to the phase shift mask.
Claim 12
Dependent Claim
17 words
The method of claim 1 , including identifying the one excepted corner according to a design rule.
Claim 13
Dependent Claim
42 words
The method of claim 11 , wherein the intersection is near an active region on the integrated circuit, and one excepted corner is selected so that it is farther from the active region than the other corners in the plurality of corners.
Claim 14
Dependent Claim
32 words
The method of claim 1 , wherein the plurality of corners define respective angles of less than 180 degrees, and the one excepted corner defines the largest angle of the respective angles.
Claim 15
Dependent Claim
14 words
The method of claim 1 , wherein said complementary mask comprises a binary mask.
Claim 16
Dependent Claim
26 words
The method of claim 1 , including producing a machine readable layout file defining the layout of the phase shift mask and of the complementary mask.
Claim 17
Dependent Claim
16 words
The method of claim 1 , including producing the phase shift mask and the complementary mask.
Claim 18
Dependent Claim
20 words
The method of claim 16 , including producing an integrated circuit using the phase shift mask and the complementary mask.
Claim 19
Dependent Claim
28 words
The method of claim 1 , wherein the one excepted corner is selected so that it corresponds to a region on the layer characterized by greater process latitude.
Claim 20
Dependent Claim
229 words
A data processing system, comprising: a processor; a machine readable data storage medium coupled to the processor, having stored thereon instructions executable by the processor defining steps for laying out a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein said pattern consists of an intersection of an odd number of line segments, the intersection defining a plurality of corners, the steps comprising: identifying features of said pattern; laying out phase shift regions for the identified features to produce a phase shift mask, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and laying out a complementary mask including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 21
Dependent Claim
229 words
A data processing system, comprising: a processor; a machine readable data storage medium coupled to the processor, having stored thereon instructions executable by the processor defining steps for laying out a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein said pattern consists of an intersection of an odd number of line segments, the intersection defining a plurality of corners, the steps comprising: identifying features of said pattern; laying out phase shift regions for the identified features to produce a phase shift mask, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and laying out a complementary mask including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 22
Dependent Claim
30 words
The system of claim 19 , the steps further including a step to lay out an opaque feature in the one corner between the first and second phase shift regions.
Claim 23
Dependent Claim
28 words
The system of claim 19 , wherein said step of identifying features includes reading a layout file which identifies features of the pattern, and processing the layout file.
Claim 24
Dependent Claim
49 words
The system of claim 19 , wherein said phase shift mask includes an opaque field, and said phase shift regions include a plurality of transparent regions having said first phase within said opaque field, and a plurality of complementary transparent regions having said second phase within said opaque field.
Claim 25
Dependent Claim
22 words
The system of claim 19 , wherein said first phase is 180 degrees out of phase with respect to said second phase.
Claim 26
Dependent Claim
31 words
The system of claim 19 , the steps further including laying out a complementary mask comprising opaque regions and transparent regions defining features having dimensions greater than the particular feature size.
Claim 27
Dependent Claim
24 words
The system of claim 19 , the steps further including adding sub-resolution features inside one or more phase shift regions in the phase shift.
Claim 28
Dependent Claim
43 words
The system of claim 19 , the steps further including dividing a phase shift region having a first phase into first and second phase shift regions having the first phase and adding a sub-resolution feature between the first and second phase shift regions.
Claim 29
Dependent Claim
45 words
The system of claim 19 , the steps further including adding sub-resolution features inside a particular phase shift region in the phase shift mask, where the particular phase shift region has a perimeter and the sub-resolution feature is inside and does not contact said perimeter.
Claim 30
Dependent Claim
18 words
The system of claim 19 , the steps further including adding sub-resolution features to the phase shift mask.
Claim 31
Dependent Claim
20 words
The system of claim 19 , the steps further including identifying the one excepted corner according to a design rule.
Claim 32
Dependent Claim
42 words
The system of claim 29 , wherein the intersection is near an active region on the integrated circuit, and one excepted corner is selected so that it is farther from the active region than the other corners in the plurality of corners.
Claim 33
Dependent Claim
32 words
The system of claim 19 , wherein the plurality of corners define respective angles of less than 180 degrees, and the one excepted corner defines the largest angle of the respective angles.
Claim 34
Dependent Claim
14 words
The system of claim 19 , wherein said complementary mask comprises a binary mask.
Claim 35
Dependent Claim
29 words
The system of claim 19 , the steps further including producing a machine readable layout file defining the layout of the phase shift mask and of the complementary mask.
Claim 36
Dependent Claim
28 words
The system of claim 19 , wherein the one excepted corner is selected so that it corresponds to a region on the layer characterized by greater process latitude.
Claim 37
Dependent Claim
225 words
An article of manufacture, comprising: a machine readable data storage medium, having stored thereon instructions executable by a data processing system defining steps for laying out a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein said pattern consists of an intersection of an odd number of line segments, the intersection defining a plurality of corners, the steps comprising: identifying features of said pattern; laying out phase shift regions for the identified features to produce a phase shift mask, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner, and laying out a complementary mask including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 38
Dependent Claim
225 words
An article of manufacture, comprising: a machine readable data storage medium, having stored thereon instructions executable by a data processing system defining steps for laying out a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein said pattern consists of an intersection of an odd number of line segments, the intersection defining a plurality of corners, the steps comprising: identifying features of said pattern; laying out phase shift regions for the identified features to produce a phase shift mask, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner, and laying out a complementary mask including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 39
Dependent Claim
30 words
The article of claim 35 , the steps further including a step to lay out an opaque feature in the one corner between the first and second phase shift regions.
Claim 40
Dependent Claim
28 words
The article of claim 35 , wherein said step of identifying features includes reading a layout file which identifies features of the pattern, and processing the layout file.
Claim 41
Dependent Claim
49 words
The article of claim 35 , wherein said phase shift mask includes an opaque field, and said phase shift regions include a plurality of transparent regions having said first phase within said opaque field, and a plurality of complementary transparent regions having said second phase within said opaque field.
Claim 42
Dependent Claim
22 words
The article of claim 35 , wherein said first phase is 180 degrees out of phase with respect to said second phase.
Claim 43
Dependent Claim
31 words
The article of claim 35 , the steps further including laying out a complementary mask comprising opaque regions and transparent regions defining features having dimensions greater than the particular feature size.
Claim 44
Dependent Claim
24 words
The article of claim 35 , the steps further including adding sub-resolution features inside one or more phase shift regions in the phase shift.
Claim 45
Dependent Claim
43 words
The article of claim 35 , the steps further including dividing a phase shift region having a first phase into first and second phase shift regions having the first phase and adding a sub-resolution feature between the first and second phase shift regions.
Claim 46
Dependent Claim
45 words
The article of claim 35 , the steps further including adding sub-resolution features inside a particular phase shift region in the phase shift mask, where the particular phase shift region has a perimeter and the sub-resolution feature is inside and does not contact said perimeter.
Claim 47
Dependent Claim
18 words
The article of claim 35 , the steps further including adding sub-resolution features to the phase shift mask.
Claim 48
Dependent Claim
20 words
The article of claim 35 , the steps further including identifying the one excepted corner according to a design rule.
Claim 49
Dependent Claim
42 words
The article of claim 45 , wherein the intersection is near an active region on the integrated circuit, and one excepted corner is selected so that it is farther from the active region than the other corners in the plurality of corners.
Claim 50
Dependent Claim
32 words
The article of claim 35 , wherein the plurality of corners define respective angles of less than 180 degrees, and the one excepted corner defines the largest angle of the respective angles.
Claim 51
Dependent Claim
14 words
The article of claim 35 , wherein said complementary mask comprises a binary mask.
Claim 52
Dependent Claim
29 words
The article of claim 35 , the steps further including producing a machine readable layout file defining the layout of the phase shift mask and of the complementary mask.
Claim 53
Dependent Claim
28 words
The article of claim 35 , wherein the one excepted corner is selected so that it corresponds to a region on the layer characterized by greater process latitude.
Claim 54
Dependent Claim
210 words
A set of one or more photolithographic masks for defining a pattern in a layer to be formed using the mask, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners, and said layer includes fields outside said pattern, comprising: a substrate, a first mask pattern on said substrate; the first mask pattern including phase shift regions, the phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner, and a complementary mask pattern on one of said substrate or another substrate, including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 55
Dependent Claim
210 words
A set of one or more photolithographic masks for defining a pattern in a layer to be formed using the mask, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners, and said layer includes fields outside said pattern, comprising: a substrate, a first mask pattern on said substrate; the first mask pattern including phase shift regions, the phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner, and a complementary mask pattern on one of said substrate or another substrate, including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 56
Dependent Claim
27 words
The set of claim 51 , including an opaque feature on the first mask pattern in the one corner between the first and second phase shift regions.
Claim 57
Dependent Claim
50 words
The set of claim 51 , wherein said first mask pattern includes an opaque field, and said phase shift regions include a plurality of transparent regions having said first phase within said opaque field, and a plurality of complementary transparent regions having said second phase with in said opaque field.
Claim 58
Dependent Claim
22 words
The set of claim 51 , wherein said first phase is 180 degrees out of phase with respect to said second phase.
Claim 59
Dependent Claim
26 words
The set of claim 51 , the complementary mask pattern comprising opaque regions and transparent regions defining features having dimensions greater than a particular feature size.
Claim 60
Dependent Claim
21 words
The set of claim 51 , including sub-resolution features inside one or more phase shift regions in the first mask pattern.
Claim 61
Dependent Claim
14 words
The set of claim 51 , including sub-resolution features to the first mask pattern.
Claim 62
Dependent Claim
37 words
The set of claim 57 , wherein the intersection is near an active region on the integrated circuit, and one excepted corner is farther from the active region than the other corners in the plurality of corners.
Claim 63
Dependent Claim
32 words
The set of claim 51 , wherein the plurality of corners define respective angles of less than 180 degrees, and the one excepted corner defines the largest angle of the respective angles.
Claim 64
Dependent Claim
23 words
The set of claim 51 , wherein the one excepted corner corresponds to a region on the layer characterized by greater process latitude.
Claim 65
Independent Claim
231 words
A method for manufacturing a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; the method comprising: identifying features of a pattern for a layer to be formed using a photolithographic mask; laying out phase shift regions for the identified features to produce a phase shift pattern, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; laying out a complementary mask pattern including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region; and forming said phase shift pattern and said complementary mask pattern on respective portions of mask substrate material.
Claim 66
Independent Claim
231 words
A method for manufacturing a photolithographic mask that defines a pattern in a layer to be formed using the mask, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; the method comprising: identifying features of a pattern for a layer to be formed using a photolithographic mask; laying out phase shift regions for the identified features to produce a phase shift pattern, the phase shift mask having phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; laying out a complementary mask pattern including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region; and forming said phase shift pattern and said complementary mask pattern on respective portions of mask substrate material.
Claim 67
Dependent Claim
22 words
The method of claim 61 , including an opaque feature in the one corner between the first and second phase shift regions.
Claim 68
Dependent Claim
27 words
The method of claim 61 , said step of identifying features includes reading a layout file which identifies features of the pattern, and processing the layout file.
Claim 69
Dependent Claim
49 words
The method of claim 61 , wherein said phase shift mask includes an opaque field, and said phase shift regions include a plurality of transparent regions having said first phase within said opaque field, and a plurality of complementary transparent regions having said second phase within said opaque field.
Claim 70
Dependent Claim
22 words
The method of claim 61 , wherein said first phase is 180 degrees out of phase with respect to said second phase.
Claim 71
Dependent Claim
28 words
The method of claim 61 , including laying out a complementary mask comprising opaque regions and transparent regions defining features having dimensions greater than the particular feature size.
Claim 72
Dependent Claim
21 words
The method of claim 61 , including adding sub-resolution features inside one or more phase shift regions in the phase shift.
Claim 73
Dependent Claim
40 words
The method of claim 61 , including dividing a phase shift region having a first phase into first and second phase shift regions having the first phase and adding a sub-resolution feature between the first and second phase shift regions.
Claim 74
Dependent Claim
42 words
The method of claim 61 , including adding sub-resolution features inside a particular phase shift region in the phase shift mask, where the particular phase shift region has a perimeter and the sub-resolution feature is inside and does not contact said perimeter.
Claim 75
Dependent Claim
15 words
The method of claim 61 , including adding sub-resolution features to the phase shift mask.
Claim 76
Dependent Claim
17 words
The method of claim 61 , including identifying the one excepted corner according to a design rule.
Claim 77
Dependent Claim
42 words
The method of claim 70 , wherein the intersection is near an active region on the integrated circuit, and one excepted corner is selected so that it is farther from the active region than the other corners in the plurality of corners.
Claim 78
Dependent Claim
32 words
The method of claim 61 , wherein the plurality of corners define respective angles of less than 180 degrees, and the one excepted corner defines the largest angle of the respective angles.
Claim 79
Dependent Claim
14 words
The method of claim 61 , wherein said complementary mask comprises a binary mask.
Claim 80
Dependent Claim
28 words
The method of claim 61 , wherein the one excepted corner is selected so that it corresponds to a region on the layer characterized by greater process latitude.
Claim 81
Independent Claim
208 words
A method for manufacturing a layer of material in an integrated circuit, the layer of material having a pattern, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; the method comprising: using photolithographic mask patterns to define the layer of material, including a first mask pattern, the first mask pattern including phase shift regions, the phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and a complementary mask pattern on one of said substrate or another substrate, including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 82
Independent Claim
208 words
A method for manufacturing a layer of material in an integrated circuit, the layer of material having a pattern, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; the method comprising: using photolithographic mask patterns to define the layer of material, including a first mask pattern, the first mask pattern including phase shift regions, the phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and a complementary mask pattern on one of said substrate or another substrate, including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region.
Claim 83
Dependent Claim
26 words
The method of claim 76 , the first mask pattern including an opaque feature in the one corner between the first and second phase shift regions.
Claim 84
Dependent Claim
49 words
The method of claim 76 , wherein said first mask pattern includes an opaque field, and said phase shift regions include a plurality of transparent regions having said first phase within said opaque field, and a plurality of complementary transparent regions having said second phase within said opaque field.
Claim 85
Dependent Claim
22 words
The method of claim 76 , wherein said first phase is 180 degrees out of phase with respect to said second phase.
Claim 86
Dependent Claim
27 words
The method of claim 76 , wherein said complementary mask pattern comprises opaque regions and transparent regions defining features having dimensions greater than the particular feature size.
Claim 87
Dependent Claim
21 words
The method of claim 76 , including sub-resolution features inside one or more phase shift regions in the first mask pattern.
Claim 88
Dependent Claim
37 words
The method of claim 81 , wherein the intersection is near an active region on the integrated circuit, and one excepted corner is farther from the active region than the other corners in the plurality of corners.
Claim 89
Dependent Claim
32 words
The method of claim 76 , wherein the plurality of corners define respective angles of less than 180 degrees, and the one excepted corner defines the largest angle of the respective angles.
Claim 90
Dependent Claim
23 words
The method of claim 76 , wherein the one excepted corner corresponds to a region on the layer characterized by greater process latitude.
Claim 91
Dependent Claim
232 words
An integrated circuit having a layer of material manufactured according to a process, the layer of material having a pattern, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; the process comprising: forming a pattern in a photosensitive material using photolithographic mask patterns to define structures in the layer of material, including a first mask pattern, the first mask pattern including phase shift regions, the phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and a complementary mask pattern on one of said substrate or another substrate, including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region; using the pattern in the photosensitive material to form the structures in the layer.
Claim 92
Dependent Claim
232 words
An integrated circuit having a layer of material manufactured according to a process, the layer of material having a pattern, wherein said pattern consisting of an intersection of an odd number of line segments, the intersection defining a plurality of corners; the process comprising: forming a pattern in a photosensitive material using photolithographic mask patterns to define structures in the layer of material, including a first mask pattern, the first mask pattern including phase shift regions, the phase shift regions extending adjacent to the line segments and around the corners in all of the plurality of corners except one, and in the one excepted corner including a first phase shift region having the first phase extending adjacent the line segment on one side of said one corner, a second phase shift region having a second phase extending adjacent the line segment on the other side of said one corner; and a complementary mask pattern on one of said substrate or another substrate, including an opaque feature preventing exposure of the intersecting line segments to be exposed using the phase shift mask, the opaque feature including a cut-out in the one excepted corner to expose any feature resulting from the phase difference in the one excepted corner between the first phase shift region and the second phase shift region; using the pattern in the photosensitive material to form the structures in the layer.
Claim 93
Dependent Claim
27 words
The integrated circuit of claim 85 , the first mask pattern including an opaque feature in the one corner between the first and second phase shift regions.
Claim 94
Dependent Claim
50 words
The integrated circuit of claim 85 , wherein said first mask pattern includes an opaque field, and said phase shift regions include a plurality of transparent regions having said first phase within said opaque field, and a plurality of complementary transparent regions having said second phase within said opaque field.
Claim 95
Dependent Claim
23 words
The integrated circuit of claim 85 , wherein said first phase is 180 degrees out of phase with respect to said second phase.
Claim 96
Dependent Claim
28 words
The integrated circuit of claim 85 , wherein said complementary mask pattern comprises opaque regions and transparent regions defining features having dimensions greater than the particular feature size.
Claim 97
Dependent Claim
22 words
The integrated circuit of claim 85 , including sub-resolution features inside one or more phase shift regions in the first mask pattern.
Claim 98
Dependent Claim
38 words
The integrated circuit of claim 90 , wherein the intersection is near an active region on the integrated circuit, and one excepted corner is farther from the active region than the other corners in the plurality of corners.
Claim 99
Dependent Claim
33 words
The integrated circuit of claim 85 , wherein the plurality of corners define respective angles of less than 180 degrees, and the one excepted corner defines the largest angle of the respective angles.
Claim 100
Dependent Claim
24 words
The integrated circuit of claim 85 , wherein the one excepted corner corresponds to a region on the layer characterized by greater process latitude.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-02-24 | 2006-08-26 | 2007-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-24 | 2010-08-26 | 2011-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-24 | 2014-08-26 | 2015-02-25 | $7700.00 | Window Closed / Lapsed |