US6503819B2 — Fabrication process of a semiconductor integrated…

Claim 1

Independent Claim 143 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film which has been formed over a silicon surface of a wafer; (b) forming a refractory metal film of tungsten or molybdenum over said silicon film through a medium of a barrier layer of a nitride of tungsten; (c) forming a gate electrode by patterning said silicon film and said refractory metal film; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing (1) hydrogen, and (2) water vapor synthesized from a mixed gas of oxygen and hydrogen gases by a catalyst, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Claim 2

Dependent Claim 143 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film which has been formed over a silicon surface of a wafer; (b) forming a refractory metal film of tungsten or molybdenum over said silicon film through a medium of a barrier layer of a nitride of tungsten; (c) forming a gate electrode by patterning said silicon film and said refractory metal film; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing (1) hydrogen, and (2) water vapor synthesized from a mixed gas of oxygen and hydrogen gases by a catalyst, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Claim 3

Dependent Claim 16 words

A process according to claim 1 , wherein said gas ambient does not contain nitrogen gas.

Claim 4

Dependent Claim 27 words

A process according to claim 1 , wherein in the step (d), said wafer is heated to a temperature in a range of 800 to 900° C.

Claim 5

Dependent Claim 175 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness of not more than 5 nm and being formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film over said silicon film; (c) forming a gate electrode by patterning said silicon film and said refractory metal film, a gate length of the gate electrode being not more than 0.25 μm; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a hydrogen gas ambient containing water vapor synthesized from a mixed gas of oxygen and hydrogen gases by a catalyst, the partial pressure of the water vapor being lower than that of the hydrogen in the hydrogen gas ambient, the upper limit of total oxide film thickness grown by said thermally oxidizing being about one and a half of the thickness of the gate insulation film.

Claim 6

Dependent Claim 175 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness of not more than 5 nm and being formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film over said silicon film; (c) forming a gate electrode by patterning said silicon film and said refractory metal film, a gate length of the gate electrode being not more than 0.25 μm; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a hydrogen gas ambient containing water vapor synthesized from a mixed gas of oxygen and hydrogen gases by a catalyst, the partial pressure of the water vapor being lower than that of the hydrogen in the hydrogen gas ambient, the upper limit of total oxide film thickness grown by said thermally oxidizing being about one and a half of the thickness of the gate insulation film.

Claim 7

Dependent Claim 16 words

A process according to claim 4 , wherein said hydrogen gas ambient does not contain nitrogen.

Claim 8

Dependent Claim 26 words

A process according to claim 4 , wherein in step (d), said wafer is heated to a temperature in a range of 800 to 900° C.

Claim 9

Dependent Claim 137 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a first film of silicon over a silicon-oxide-film-containing gate insulation film which has been formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film of tungsten or molybdenum over said first film; (c) forming a gate electrode by patterning said first film and said refractory metal film; and (d) after said step (c), thermally oxidizing the first film without oxidizing said refractory metal film, under a hydrogen gas ambient, substantially without nitrogen gas, the hydrogen gas ambient containing water vapor synthesized from a mixed gas of oxygen and hydrogen gases by a catalyst, the partial pressure of the water vapor being lower than that of hydrogen gas in the hydrogen gas ambient.

Claim 10

Dependent Claim 137 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a first film of silicon over a silicon-oxide-film-containing gate insulation film which has been formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film of tungsten or molybdenum over said first film; (c) forming a gate electrode by patterning said first film and said refractory metal film; and (d) after said step (c), thermally oxidizing the first film without oxidizing said refractory metal film, under a hydrogen gas ambient, substantially without nitrogen gas, the hydrogen gas ambient containing water vapor synthesized from a mixed gas of oxygen and hydrogen gases by a catalyst, the partial pressure of the water vapor being lower than that of hydrogen gas in the hydrogen gas ambient.

Claim 11

Dependent Claim 197 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming an isolation groove in a silicon surface of a major surface of a wafer; (b) embedding an insulating material in said groove; (c) after the step (b), planarizing the major surface of said wafer by chemical mechanical polishing; (d) forming a silicon film over a gate insulation film containing a silicon oxide film having a thickness not more than 5 nm, said silicon oxide film being a principal portion of the entire thickness of the gate insulation film, the silicon oxide film having been formed over the silicon surface of said wafer by thermally oxidizing the silicon surface; (e) forming a refractory metal film over said silicon film; (f) forming a gate electrode by patterning said silicon film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (g) after said step (f), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a hydrogen gas ambient containing water vapor, the partial pressure of the water vapor being lower than that of the hydrogen in the hydrogen gas ambient.

Claim 12

Dependent Claim 197 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming an isolation groove in a silicon surface of a major surface of a wafer; (b) embedding an insulating material in said groove; (c) after the step (b), planarizing the major surface of said wafer by chemical mechanical polishing; (d) forming a silicon film over a gate insulation film containing a silicon oxide film having a thickness not more than 5 nm, said silicon oxide film being a principal portion of the entire thickness of the gate insulation film, the silicon oxide film having been formed over the silicon surface of said wafer by thermally oxidizing the silicon surface; (e) forming a refractory metal film over said silicon film; (f) forming a gate electrode by patterning said silicon film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (g) after said step (f), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a hydrogen gas ambient containing water vapor, the partial pressure of the water vapor being lower than that of the hydrogen in the hydrogen gas ambient.

Claim 13

Dependent Claim 17 words

A process according to claim 8 , wherein said hydrogen gas ambient does not contain nitrogen gas.

Claim 14

Dependent Claim 26 words

A process according to claim 8 , wherein in step (g), said wafer is heated to a temperature in a range of 800 to 900° C.

Claim 15

Dependent Claim 141 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness not more than 5 nm and formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film of tungsten over said silicon film; (c) forming a gate electrode by patterning said silicon film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing hydrogen and water vapor, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Claim 16

Dependent Claim 141 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness not more than 5 nm and formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film of tungsten over said silicon film; (c) forming a gate electrode by patterning said silicon film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing hydrogen and water vapor, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Claim 17

Dependent Claim 185 words

A process for the fabrication of a semiconductor integrated circuit device, the semiconductor integrated circuit device comprising: (a) a gate insulating film over a silicon-base surface region; (b) a gate electrode having: (i) a lower polysilicon film constituting a silicon-base region together with the silicon-base surface region, said silicon-base region including silicon as its principal component; and (ii) an upper refractory metal film including a refractory metal as its principal component, wherein the upper refractory metal film constitutes a refractory metal region including a refractory metal as one of its principal components, and the gate insulating film and the gate electrode are elements of an insulated gate field effect transistor over a major surface of a substrate region, the fabrication process comprising: (x) after patterning the gate electrode, performing heat treatment, in a heat treatment chamber of a single wafer processing furnace by lamp heating under a mixed gas ambient including hydrogen gas and water vapor synthesized from hydrogen gas and oxygen gas by catalyst, of a wafer including the substrate region so as to oxidize the silicon-base region without oxidizing the refractory metal region.

Claim 18

Dependent Claim 185 words

A process for the fabrication of a semiconductor integrated circuit device, the semiconductor integrated circuit device comprising: (a) a gate insulating film over a silicon-base surface region; (b) a gate electrode having: (i) a lower polysilicon film constituting a silicon-base region together with the silicon-base surface region, said silicon-base region including silicon as its principal component; and (ii) an upper refractory metal film including a refractory metal as its principal component, wherein the upper refractory metal film constitutes a refractory metal region including a refractory metal as one of its principal components, and the gate insulating film and the gate electrode are elements of an insulated gate field effect transistor over a major surface of a substrate region, the fabrication process comprising: (x) after patterning the gate electrode, performing heat treatment, in a heat treatment chamber of a single wafer processing furnace by lamp heating under a mixed gas ambient including hydrogen gas and water vapor synthesized from hydrogen gas and oxygen gas by catalyst, of a wafer including the substrate region so as to oxidize the silicon-base region without oxidizing the refractory metal region.

Claim 19

Dependent Claim 30 words

A process according to claim 12 , wherein said water vapor synthesized from hydrogen gas and oxygen gas is transferred into the heat treatment chamber while maintaining its gas state.

Claim 20

Dependent Claim 28 words

A process according to claim 13 , wherein said synthesis of water vapor is performed at a temperature lower than that of the heat treatment of the wafer.

Claim 21

Dependent Claim 24 words

A process according to claim 14 , wherein a gate length of the insulated gate field effect transistor is not longer than 0.25 μm.

Claim 22

Dependent Claim 21 words

A process according to claim 15 , wherein a thickness of the gate insulating film is not thicker than 5 nm.

Claim 23

Dependent Claim 25 words

A process according to claim 16 , wherein the composition of hydrogen and oxygen in a gas provided to synthesize the r vapor is hydrogen-rich.

Claim 24

Dependent Claim 22 words

A process according to claim 17 , wherein the heat treatment is performed at a temperature not lower than 800 degrees centigrade.

Claim 25

Dependent Claim 192 words

A process for the fabrication of a semiconductor integrated circuit device, comprising: (a) forming a first insulating film over a surface region, said surface region including silicon as its principal component, over a major surface of a wafer, wherein said first insulating film is to be a gate insulating film of an insulated gate field effect transistor; (b) forming a first silicon-containing film over the first insulating film, wherein said first silicon-containing film includes silicon as its principal component; (c) forming a first refractory metal film over the first silicon containing film, wherein said first refractory metal film includes refractory metal as its principal component; (d) forming a gate electrode of the insulated gate field effect transistor by patterning the first silicon-containing film and the first refractory metal film; (e) after step (d), performing heat treatment, in a heat treatment chamber of a single wafer processing furnace by lamp heating under a mixed gas ambient including hydrogen gas and water vapor synthesized from hydrogen gas and oxygen gas by catalyst, of the wafer so as to oxidize the surface region and the first silicon-containing film without oxidizing the first refractory metal film.

Claim 26

Dependent Claim 192 words

A process for the fabrication of a semiconductor integrated circuit device, comprising: (a) forming a first insulating film over a surface region, said surface region including silicon as its principal component, over a major surface of a wafer, wherein said first insulating film is to be a gate insulating film of an insulated gate field effect transistor; (b) forming a first silicon-containing film over the first insulating film, wherein said first silicon-containing film includes silicon as its principal component; (c) forming a first refractory metal film over the first silicon containing film, wherein said first refractory metal film includes refractory metal as its principal component; (d) forming a gate electrode of the insulated gate field effect transistor by patterning the first silicon-containing film and the first refractory metal film; (e) after step (d), performing heat treatment, in a heat treatment chamber of a single wafer processing furnace by lamp heating under a mixed gas ambient including hydrogen gas and water vapor synthesized from hydrogen gas and oxygen gas by catalyst, of the wafer so as to oxidize the surface region and the first silicon-containing film without oxidizing the first refractory metal film.

Claim 27

Dependent Claim 30 words

A process according to claim 19 , wherein said water vapor synthesized from hydrogen gas and oxygen gas is transferred into the heat treatment chamber while maintaining its gas state.

Claim 28

Dependent Claim 28 words

A process according to claim 20 , wherein the synthesis of water vapor is performed at a temperature lower than that of the heat treatment of the wafer.

Claim 29

Dependent Claim 28 words

A process according to claim 21 , wherein a gate length of the gate electrode of the insulated gate field effect transistor is not longer than 0.25 μm.

Claim 30

Dependent Claim 21 words

A process according to claim 22 , wherein a thickness of the gate insulating film is not thicker than 5 nm.

Claim 31

Dependent Claim 25 words

A process according to claim 23 , wherein the composition of hydrogen and oxygen in a gas provided to synthesize the water vapor is hydrogen-rich.

Claim 32

Dependent Claim 25 words

A process according to claim 24 , wherein the heat treatment of the wafer is performed at a temperature not lower than 800 degrees centigrade.

Claim 33

Dependent Claim 170 words

A process for the fabrication of a semiconductor integrated circuit device, comprising: (a) forming a first insulating film over a silicon surface region over a major surface of a wafer, wherein said first insulating film is to be a gate insulating film of an insulated gate field effect transistor; (b) forming a first silicon-containing film over the first insulating film, wherein said first silicon-containing film includes silicon as its principal component; (c) forming a first refractory metal film over the first silicon-containing film; (d) forming a gate electrode of the insulated gate field effect transistor by patterning the first silicon-containing film and the first refractory metal film; (e) after step (d), performing heat treatment, in a heat treatment chamber of a single wafer processing furnace by lamp heating under a mixed gas ambient including hydrogen gas and water vapor synthesized from hydrogen gas and oxygen gas by catalyst, of the wafer so as to oxidize the surface region and the first silicon-containing film without oxidizing the first refractory metal film.

Claim 34

Dependent Claim 170 words

A process for the fabrication of a semiconductor integrated circuit device, comprising: (a) forming a first insulating film over a silicon surface region over a major surface of a wafer, wherein said first insulating film is to be a gate insulating film of an insulated gate field effect transistor; (b) forming a first silicon-containing film over the first insulating film, wherein said first silicon-containing film includes silicon as its principal component; (c) forming a first refractory metal film over the first silicon-containing film; (d) forming a gate electrode of the insulated gate field effect transistor by patterning the first silicon-containing film and the first refractory metal film; (e) after step (d), performing heat treatment, in a heat treatment chamber of a single wafer processing furnace by lamp heating under a mixed gas ambient including hydrogen gas and water vapor synthesized from hydrogen gas and oxygen gas by catalyst, of the wafer so as to oxidize the surface region and the first silicon-containing film without oxidizing the first refractory metal film.

Claim 35

Dependent Claim 30 words

A process according to claim 26 , wherein said water vapor synthesized from hydrogen gas and oxygen gas is transferred into the heat treatment chamber while maintaining its gas state.

Claim 36

Dependent Claim 28 words

A process according to claim 27 , wherein the synthesis of water vapor is performed at a temperature lower than that of the heat treatment of the wafer.

Claim 37

Dependent Claim 28 words

A process according to claim 28 , wherein a gate length of the gate electrode of the insulated gate field effect transistor is not longer than 0.25 μm.

Claim 38

Dependent Claim 21 words

A process according to claim 29 , wherein a thickness of the gate insulating film is not thicker than 5 nm.

Claim 39

Dependent Claim 25 words

A process according to claim 30 , wherein the composition of hydrogen and oxygen in a gas provided to synthesize the water vapor is hydrogen-rich.

Claim 40

Dependent Claim 25 words

A process according to claim 31 , wherein the heat treatment of the wafer is performed at a temperature not lower than 800 degrees centigrade.

Claim 41

Dependent Claim 139 words

A process for fabrication of a semiconductor intergrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness of not more than 5 nm and formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film overlying said silicon film; (c) forming a gate electrode by patterning said silicon film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing hydrogen and water vapor, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Claim 42

Dependent Claim 139 words

A process for fabrication of a semiconductor intergrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness of not more than 5 nm and formed over a silicon surface of a major surface of a wafer; (b) forming a refractory metal film overlying said silicon film; (c) forming a gate electrode by patterning said silicon film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (d) after said step (c), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing hydrogen and water vapor, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Claim 43

Dependent Claim 160 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness of not more than 5 nm and formed over a silicon surface of a major surface of a wafer; (b) forming a first film, including depositing a nitride of a refractory metal, overlying the silicon film; (c) forming a refractory metal film overlying said first film; (d) forming a gate electrode by patterning said silicon film, said first film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (e) after said step (d), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing hydrogen and water vapor, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Claim 44

Dependent Claim 160 words

A process for the fabrication of a semiconductor integrated circuit device, comprising the steps of: (a) forming a silicon film over a silicon-oxide-film-containing gate insulation film, the gate insulation film having a thickness of not more than 5 nm and formed over a silicon surface of a major surface of a wafer; (b) forming a first film, including depositing a nitride of a refractory metal, overlying the silicon film; (c) forming a refractory metal film overlying said first film; (d) forming a gate electrode by patterning said silicon film, said first film and said refractory metal film, the gate length of said gate electrode being not more than 0.25 μm; and (e) after said step (d), thermally oxidizing the silicon film without oxidizing said refractory metal film, under a gas ambient containing hydrogen and water vapor, and containing substantially no hydrogen radicals, the partial pressure of the water vapor being lower than that of the hydrogen in the gas ambient.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2006-01-06	2006-07-08	2007-01-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2010-01-06	2010-07-08	2011-01-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2014-01-06	2014-07-08	2015-01-07	$7700.00	Window Closed / Lapsed

Fabrication process of a semiconductor integrated circuit device

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