Patent US6469581B1 successfully refreshed from Google Patents.
US6469581B1
Expired / Lapsed
US
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HEMT-HBT doherty microwave amplifier
Assignee: Northrop Grumman Systems Corp
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Filing: 2001-06-08
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Granted: 2002-10-22
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Expires: 2021-06-08
Abstract
Abstract A microwave amplifier and more particularly to a microwave amplifier configured as a Doherty amplifier. The amplifier includes a carrier amplifier, a peak amplifier, a Lange coupler at the input of the amplifiers and quarter wave amplifier at the output of the amplifiers. In order to further increase the efficiency, the Doherty amplifier is formed from HEMT/HBT technology to take advantage of the low-noise performance of HEMTs and the high-linearity of HBTs to form a relatively efficient amplifier that functions as a low-noise amplifier at low power levels and automatically switches to high-power amplification for relatively high-impact RF power levels.
Inventors
- 👤 Kevin W. Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:50
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/02; H03F1/04; H03F1/06; H03F1/07; H03F3/00; H03F3/60; H03F1/0205; H03F1/0288; H03F1/30; H03F1/306; H03F3/189; H03F3/19; H03F3/193; H03F3/1935; H03F2200/00; H03F2200/192; H03F2200/294; H03F2200/372
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
93 words
A microwave power amplifier comprising: a carrier amplifier formed from one of either an HEMT or an HBT having a first input an first output; a peak amplifier formed the other of an HEMT or an HBT having a second input and a second output; and a coupler having first and second input terminals and first and second output terminals, said first and second output terminals coupled to said first and second inputs, said first input terminal defining a RF input port and said second input terminal coupled to an input termination impedance.
Claim 2
Dependent Claim
93 words
A microwave power amplifier comprising: a carrier amplifier formed from one of either an HEMT or an HBT having a first input an first output; a peak amplifier formed the other of an HEMT or an HBT having a second input and a second output; and a coupler having first and second input terminals and first and second output terminals, said first and second output terminals coupled to said first and second inputs, said first input terminal defining a RF input port and said second input terminal coupled to an input termination impedance.
Claim 3
Dependent Claim
21 words
The microwave power amplifier as recited in claim 1 , wherein said carrier amplifier is formed from at least one HEMT.
Claim 4
Dependent Claim
21 words
The microwave power amplifier as recited in claim 2 , wherein said peak amplifier is formed from at least one HBT.
Claim 5
Dependent Claim
21 words
The microwave power amplifier as recited in claim 1 , wherein said carrier amplifier is formed from at least one HBT.
Claim 6
Dependent Claim
21 words
The microwave power amplifier as recited in claim 4 , wherein said peak amplifier is formed from at least one HEMT.
Claim 7
Dependent Claim
109 words
A microwave power amplifier comprising: a carrier amplifier formed from one of either an HEMT or an HBT having a first input an first output; a peak amplifier formed the other of an HEMT or an HBT having a second input and a second output; a coupler having first and second input terminals and first and second output terminals, said first and second output terminals coupled to said first and second inputs, said first input terminal defining a RF input port and said second input terminal coupled to an input termination impedance; and means for electronically tuning one or the other of said carrier amplifier and said HBT amplifier.
Claim 8
Dependent Claim
109 words
A microwave power amplifier comprising: a carrier amplifier formed from one of either an HEMT or an HBT having a first input an first output; a peak amplifier formed the other of an HEMT or an HBT having a second input and a second output; a coupler having first and second input terminals and first and second output terminals, said first and second output terminals coupled to said first and second inputs, said first input terminal defining a RF input port and said second input terminal coupled to an input termination impedance; and means for electronically tuning one or the other of said carrier amplifier and said HBT amplifier.
Claim 9
Dependent Claim
21 words
The microwave power amplifier as recited in claim 6 , wherein said carrier amplifier is formed from at least one HEMT.
Claim 10
Dependent Claim
21 words
The microwave power amplifier as recited in claim 7 , wherein said peak amplifier is formed from at least one HBT.
Claim 11
Dependent Claim
21 words
The microwave power amplifier as recited in claim 6 , wherein said carrier amplifier is formed from at least one HBT.
Claim 12
Dependent Claim
21 words
The microwave power amplifier as recited in claim 9 , wherein said peak amplifier is formed from at least one HEMT.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-10-21 | 2006-04-22 | 2006-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-21 | 2010-04-22 | 2010-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-10-21 | 2014-04-22 | 2014-10-22 | $7700.00 | Window Closed / Lapsed |