Microwave doherty amplifier

Claim 2

A microwave frequency amplifier comprising: phase quadrature producing means coupled to an input signal for producing a phase quadrature relationship over a broad-band between a first output signal and a second output signal from said phase quadrature producing means; carrier amplifier means for amplifying said first output signal from said phase quadrature producing means; peak amplifier means for amplifying said second output signal from said phase quadrature producing means; distributed line means coupled between an output of said carrier amplifier means and an output of said peak amplifier means for controlling a phase of said output of said carrier amplifier means relative to the output of said peak amplifier means whereby said carrier amplifier means output and said peak amplifier means output combine in additive phase, and said distributed line means further provides impedance transforming action to an apparent load presented to said carrier amplifier means as a function of a degree of conduction of said peak amplifying means; predetermined output impedance producing means coupled to said distributed line means and said output of said peak amplifier means for producing a predetermined output impedance of said microwave frequency amplifier; said predetermined output impedance producing means comprises means for providing an operational voltage source for said carrier amplifier means and said peak amplifier means; and said microwave frequency amplifier operates over a plurality of microwave frequencies including 1300 MHz.

Claim 3

The microwave frequency amplifier as recited in claim 1 wherein: said input signal comprises multi-carrier signals.

Claim 4

The microwave frequency amplifier as recited in claim 1 wherein: said input signal comprises a continuous single carrier that varies in amplitude.

Claim 5

The microwave frequency amplifier as recited in claim 1 wherein: said input signal comprises a multi-carrier signal with each carrier signal varying in amplitude.

Claim 6

The microwave frequency amplifier as recited in claim 1 wherein: said carrier amplifier means comprises a gallium arsenide semiconductor device.

Claim 7

The microwave frequency amplifier as recited in claim 1 wherein: said peak amplifier means comprises a gallium arsenide semiconductor device.

Claim 8

The microwave frequency amplifier as recited in claim 1 wherein: said distributed line means comprises a quarter-wave transformer.

Claim 9

The microwave frequency amplifier as recited in claim 1 wherein: said degree of conduction of said peak amplifier means is determined by an input drive level of said second output signal from said phase quadrature producing means relative to a predetermined control input applied to said peak amplifier means.

Claim 10

A microwave frequency amplifier comprising: phase quadrature producing means coupled to an input signal for producing a phase quadrature relationship over a broad-band between a first output signal and a second output signal from said phase quadrature producing means; means for amplifying said first output signal; first matching means coupled between said first output signal and said first output signal amplifying means for matching an impedance at an input of said first output signal amplifying means to an output impedance of said first output signal, said first matching means providing a low DC resistance and low reactance path at a frequency of a modulation envelope at baseband and providing sufficient RF signal isolation at a carrier frequency in order to bias said first output signal amplifying means; means for amplifying said second output signal; second matching means coupled between said second output signal and said second output signal amplifying means for matching an impedance at an input of said second output signal amplifying means to an output impedance of said second output signal, said second matching means providing a low DC resistance and low reactance path at the frequence of the modulation envelope at baseband and providing sufficient RF signal isolation at the carrier frequency in order to bias said second output signal amplifying means; a first biasing means coupled to said first matching means for providing a bias to a control input of said first output signal amplifying means; a second biasing means coupled to said second matching means for providing a bias to a control input of said second output signal amplifying means; distributed line means coupled between an output of said first output signal amplifying means and an output of said second output signal amplifying means for controlling a phase of said output of said first output signal amplifying means relative to said output of said second output signal amplifying means whereby said first output signal amplifying means output and said second output signal amplifying means output combine in additive phase, and said distributed line means further provides impedance transforming action to an apparent load presented to said first output signal amplifying means as a function of a degree of conduction of said second output signal amplifying means; predetermined output impedence producing means coupled to said distributed line means and said output of said second output signal amplifying means for producing a predetermined output impedance of said microwave frequency amplifier; and said predetermined output impedance producing means comprises means for providing an operational voltage source for said first output signal amplifying means and said second output signal amplifying means.

Claim 11

A microwave frequency amplifier comprising: phase quadrature producing means coupled to an input signal for producing a phase quadrature relationship over a broad-band between a first output signal and a second output signal from said phase quadrature producing means; means for amplifying said first output signal; first matching means coupled between said first output signal and said first output signal amplifying means for matching an impedance at an input of said first output signal amplifying means to an output impedance of said first output signal, said first matching means providing a low DC resistance and low reactance path at a frequency of a modulation envelope at baseband and providing sufficient RF signal isolation at a carrier frequency in order to bias said first output signal amplifying means; means for amplifying said second output signal; second matching means coupled between said second output signal and said second output signal amplifying means for matching an impedance at an input of said second output signal amplifying means to an output impedance of said second output signal, said second matching means providing a low DC resistance and low reactance path at the frequence of the modulation envelope at baseband and providing sufficient RF signal isolation at the carrier frequency in order to bias said second output signal amplifying means; a first biasing means coupled to said first matching means for providing a bias to a control input of said first output signal amplifying means; a second biasing means coupled to said second matching means for providing a bias to a control input of said second output signal amplifying means; distributed line means coupled between an output of said first output signal amplifying means and an output of said second output signal amplifying means for controlling a phase of said output of said first output signal amplifying means relative to said output of said second output signal amplifying means whereby said first output signal amplifying means output and said second output signal amplifying means output combine in additive phase, and said distributed line means further provides impedance transforming action to an apparent load presented to said first output signal amplifying means as a function of a degree of conduction of said second output signal amplifying means; predetermined output impedence producing means coupled to said distributed line means and said output of said second output signal amplifying means for producing a predetermined output impedance of said microwave frequency amplifier; and said predetermined output impedance producing means comprises means for providing an operational voltage source for said first output signal amplifying means and said second output signal amplifying means.

Claim 12

The microwave frequency amplifier as recited in claim 9 wherein: said microwave frequency amplifier operates over a plurality of microwave frequencies including 1300 MHz.

Claim 13

The microwave frequency amplifier as recited in claim 10 wherein: said degree of conduction of said second output signal amplifying means is determined by an input drive level relative to a predetermined control input applied to said second output signal amplifying means.

Claim 14

The microwave frequency amplifier as recited in claim 10 wherein said first matching means and said second matching means each comprises a band-pass network.

Claim 15

The microwave frequency amplifier as recited in claim 10 wherein each of said first and second biasing means comprises a bias voltage.

Claim 16

The microwave frequency amplifier as recited in claim 10 wherein: a voltage source for a first output signal amplifying means is coupled to said first reactive network means.

Claim 17

The microwave frequency amplifier as recited in claim 10 wherein: a voltage source for a second output signal amplifying means is coupled to said second reactive network means.

Claim 18

The microwave frequency amplifier as recited in claim 9 wherein: said input signal comprises multi-carrier signals.

Claim 19

The microwave frequency amplifier as recited in claim 9 wherein: said input signal comprises a continuous single carrier that varies in amplitude.

Claim 20

The microwave frequency amplifier as recited in claim 9 wherein: said input signal comprises a multi-carrier signal with each carrier signal varying in amplitude.

Claim 21

The microwave frequency amplifier as recited in claim 9 wherein: said first output signal amplifying means comprises a gallium arsenide semiconductor device.

Claim 22

The microwave frequency amplifier as recited in claim 9 wherein: said second output signal amplifying means comprises a gallium arsenide semiconductor device.

Claim 23

The microwave frequency amplifier as recited in claim 9 wherein: said distributed line means comprises a quarter-wave transformer.

Claim 24

The microwave frequency amplifier as recited in claim 9 wherein: said predetermined output impedance producing means comprises a transmission line connected to the distributed line means.

Claim 25

The microwave frequency amplifier as recited in claim 9 wherein: said degree of conduction of said second output signal amplifying means is determined by an input drive level relative to said control input applied to said second output signal amplifying means.

Claim 26

The microwave frequency amplifier as recited in claim 9 wherein said first matching means and said second matching means each comprises a transmission line.

Claim 27

The microwave frequency amplifier as recited in claim 9 wherein each of said first and second bias means comprises a bias tee.

Claim 28

The microwave frequency amplifier as recited in claim 9 wherein: said second output signal amplifying means comprises a gallium arsenide semiconductor device.

Claim 29

A microwave frequency amplifier comprising: phase quadrature producing means coupled to an input signal for producing a phase quadrature relationship over a broad-band between a first output signal and a second output signal from said phase quadrature producing means; means for amplifying said first output signal; first matching means coupled between said first output signal and said first output signal amplifying means for matching an impedance at an input of said first output signal amplifying means to an output impedance of said first output signal; means for amplifying said second output signal; second matching means coupled between said second output signal and said second output signal amplifying means for matching an impedance at an input of said second output signal amplifying means to an output impedance of said second output signal; means coupled to said first matching means for providing a bias to a control input of said first output signal amplifying means; means coupled to said second matching means for providing a bias to a control input of said second output signal amplifying means; distributed line means coupled between an output of said first output signal amplifying means and an output of said second output signal amplifying means for controlling a phase of said output of said first output signal amplifying means relative to the output of said second output signal amplifying means whereby said first output signal amplifying means output and said second output signal amplifying means output combine in additive phase and said distributed line means further provides impedance transforming action to an apparent load presented to said first output signal amplifying means as a function of a degree of conduction of said second output signal amplifying means; means coupled to said distributed line means and said output of said second output signal amplifying means for providing an output matching network; first reactive network means coupled to said first output signal amplifying means output for canceling capacitance present at said first output signal amplifying means output; and second reactive network means coupled to said second output signal amplifying means for canceling capacitance present at said second output signal amplifying means output.

Claim 30

A microwave frequency amplifier comprising: phase quadrature producing means coupled to an input signal for producing a phase quadrature relationship over a broad-band between a first output signal and a second output signal from said phase quadrature producing means; means for amplifying said first output signal; first matching means coupled between said first output signal and said first output signal amplifying means for matching an impedance at an input of said first output signal amplifying means to an output impedance of said first output signal; means for amplifying said second output signal; second matching means coupled between said second output signal and said second output signal amplifying means for matching an impedance at an input of said second output signal amplifying means to an output impedance of said second output signal; means coupled to said first matching means for providing a bias to a control input of said first output signal amplifying means; means coupled to said second matching means for providing a bias to a control input of said second output signal amplifying means; distributed line means coupled between an output of said first output signal amplifying means and an output of said second output signal amplifying means for controlling a phase of said output of said first output signal amplifying means relative to the output of said second output signal amplifying means whereby said first output signal amplifying means output and said second output signal amplifying means output combine in additive phase and said distributed line means further provides impedance transforming action to an apparent load presented to said first output signal amplifying means as a function of a degree of conduction of said second output signal amplifying means; means coupled to said distributed line means and said output of said second output signal amplifying means for providing an output matching network; first reactive network means coupled to said first output signal amplifying means output for canceling capacitance present at said first output signal amplifying means output; and second reactive network means coupled to said second output signal amplifying means for canceling capacitance present at said second output signal amplifying means output.

Claim 31

The microwave frequency amplifier as recited in claim 27 wherein: said microwave frequency amplifier operates over a plurality of microwave frequencies including 1300 MHz.

Claim 32

The microwave frequency amplifier as recited in claim 27 wherein: said input signal comprises multi-carrier signals.

Claim 33

The microwave frequency amplifier as recited in claim 27 wherein: said input signal comprises a continuous single carrier that varies in amplitude.

Claim 34

The microwave frequency amplifier as recited in claim 27 wherein: said input signal comprises a multi-carrier signal with each carrier signal varying in amplitude.

Claim 35

The microwave frequency amplifier as recited in claim 27 wherein: said first output signal amplifying means comprises a first gallium arsenide semiconductor device.

Claim 36

A microwave frequency amplifier comprising: phase quadrature producing means coupled to an input signal for producing a phase quadrature relationship over a broad-band between a first output signal and a second output signal from said phase quadrature producing means; means for amplifying said first output signal; first matching means coupled between said first output signal and said first output signal amplifying means for matching an impedance at an input of said first output signal amplifying means to an output impedance of said first output signal; means for amplifying said second output signal; second matching means coupled between said second output signal and said second output signal amplifying means for matching an impedance at an input of said second output signal amplifying means to an output impedance of said second output signal; means coupled to said first matching means for providing a bias to a control input of said first output signal amplifying means; means coupled to said second matching means for providing a bias to a control input of said second output signal amplifying means; distributed line means coupled between an output of said first output signal amplifying means and an output of said second output signal amplifying means for controlling a phase of said output of said first output signal amplifying means relative to an output of said second output signal amplifying means whereby said first output signal amplifying means output and said second output signal amplifying means output combine in additive phase and said distributed line means further provides impedance transforming action to an apparent load presented to said first output signal amplifying means as a function of a degree of conduction of said second output signal amplifying means; means coupled to said distributed line means and said output of said second output signal amplifying means for providing an output matching network; first reactive network means coupled to said first output signal amplifying means output for canceling capacitance present at said first output signal amplifying means output; second reactive network means coupled to said second output signal amplifying means for canceling capacitance present at said second output signal amplifying means output; means coupled to said first output signal amplifying means output for providing zero impedance to a second harmonic of a design frequency at said first output signal amplifying means output; and means coupled to said second output signal amplifying means output for providing zero impedance to a second harmonic of a design frequency at said second output signal amplifying means output.

Claim 37

A microwave frequency amplifier comprising: phase quadrature producing means coupled to an input signal for producing a phase quadrature relationship over a broad-band between a first output signal and a second output signal from said phase quadrature producing means; means for amplifying said first output signal; first matching means coupled between said first output signal and said first output signal amplifying means for matching an impedance at an input of said first output signal amplifying means to an output impedance of said first output signal; means for amplifying said second output signal; second matching means coupled between said second output signal and said second output signal amplifying means for matching an impedance at an input of said second output signal amplifying means to an output impedance of said second output signal; means coupled to said first matching means for providing a bias to a control input of said first output signal amplifying means; means coupled to said second matching means for providing a bias to a control input of said second output signal amplifying means; distributed line means coupled between an output of said first output signal amplifying means and an output of said second output signal amplifying means for controlling a phase of said output of said first output signal amplifying means relative to an output of said second output signal amplifying means whereby said first output signal amplifying means output and said second output signal amplifying means output combine in additive phase and said distributed line means further provides impedance transforming action to an apparent load presented to said first output signal amplifying means as a function of a degree of conduction of said second output signal amplifying means; means coupled to said distributed line means and said output of said second output signal amplifying means for providing an output matching network; first reactive network means coupled to said first output signal amplifying means output for canceling capacitance present at said first output signal amplifying means output; second reactive network means coupled to said second output signal amplifying means for canceling capacitance present at said second output signal amplifying means output; means coupled to said first output signal amplifying means output for providing zero impedance to a second harmonic of a design frequency at said first output signal amplifying means output; and means coupled to said second output signal amplifying means output for providing zero impedance to a second harmonic of a design frequency at said second output signal amplifying means output.

Claim 38

The microwave frequency amplifier as recited in claim 33 wherein: said microwave frequency amplifier operates over a plurality of microwave frequencies including 1300 MHz.

Claim 39

The microwave frequency amplifier as recited in claim 33 wherein: said input signal comprises multi-carrier signals.

Claim 40

The microwave frequency amplifier as recited in claim 33 wherein: said input signal comprises a continuous single carrier that varies in amplitude.

Claim 41

The microwave frequency amplifier as recited in claim 33 wherein: said input signal comprises a multi-carrier signal with each carrier signal varying in amplitude.

Claim 42

The microwave frequency amplifier as recited in claim 33 wherein: said first output signal amplifying means comprises a gallium arsenide semiconductor device.

Claim 43

The microwave frequency amplifier as recited in claim 33 wherein: said second output signal amplifying means comprises a gallium arsenide semiconductor device.

Claim 44

The microwave frequency amplifier as recited in claim 33 wherein: said degree of conduction of said second output signal amplifying means is determined by an input drive level relative to said control input applied to said second output signal amplifying means.

Claim 45

The microwave frequency amplifier as recited in claim 33 wherein said first matching means and said second matching means each comprises a band-pass network.

Claim 46

The microwave frequency amplifier as recited in claim 33 wherein said biasing means comprises a bias voltage.

Claim 47

The microwave frequency amplifier as recited in claim 33 wherein: a voltage source for said first output signal amplifying means is coupled to said first reactive network means.

Claim 48

The microwave frequency amplifier as recited in claim 33 wherein: a voltage source for said second output signal amplifying means is coupled to said second reactive network means.

Claim 51

The method as recited in claim 45 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having multi-carrier signals.

Claim 52

The method as recited in claim 45 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having a continuous single carrier that varies in amplitude.

Claim 53

The method as recited in claim 45 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having a multi-carrier signal with each carrier signal varying in amplitude.

Claim 54

The method as recited in claim 45 wherein said step of amplifying said first output signal includes the step of operating a gallium arsenide semiconductor device.

Claim 55

The method as recited in claim 45 wherein said step of amplifying said second output signal includes the step of operating a gallium arsenide semiconductor device.

Claim 58

The method as recited in claim 51 wherein said microwave frequency amplifier operates over a plurality of microwave frequencies including 1300 MHz.

Claim 59

The method as recited in claim 51 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having multi-carrier signals.

Claim 60

The method as recited in claim 51 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having a continuous single carrier that varies in amplitude.

Claim 61

The method as recited in claim 51 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having multi-carrier signals with each carrier signal varying in amplitude.

Claim 62

The method as recited in claim 51 wherein said step of amplifying said first output signal includes the step of operating a gallium arsenide semiconductor device.

Claim 63

The method as recited in claim 51 wherein said step of amplifying said second output signal includes the step of operating a gallium arsenide semiconductor device.

Claim 66

The method as recited in claim 59 wherein said microwave frequency amplifier operates over a plurality of microwave frequencies including 1300 MHz.

Claim 67

The method as recited in claim 58 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having multi-carrier signals.

Claim 68

The method as recited in claim 58 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having a continuous single carrier that varies in amplitude.

Claim 69

The method as recited in claim 58 wherein said step of providing a phase quadrature relationship comprises the step of said phase quadrature producing means being coupled to an input signal having a multi-carrier signal with each carrier signal varying in amplitude.

Claim 70

The method as recited in claim 58 wherein said step of amplifying said first output signal includes the step of operating a gallium arsenide semiconductor device.

Claim 71

The method as recited in claim 58 wherein said step of amplifying said second output signal includes the step of operating a gallium arsenide semiconductor device.