US5162243A
Expired / Lapsed
US
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Method of producing high reliability heterojunction bipolar transistors
Assignee: Northrop Grumman Corp
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Filing: 1991-08-30
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Granted: 1992-11-10
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Expires: 2011-08-30
Abstract
Abstract A technique for producing high reliability GaAsAlGaAs heterojunction bipolar transistors by Molecular Beam Epitaxy with beryllium base doping. Beryllium incorporation and diffusion, during base-layer deposition, is controlled through a combination of reduced substrate temperature and increase As/Ga flux ratio during MBE growth resulting in extremely stable heterojunction bipolar transistor profiles. In addition, graded InGaAs surface layers with non-alloyed refractory metal contacts are shown to significantly improve ohmic reliability to alloyed AuGe contacts. High gain (DC beta) is achieved by the use of an increased substrate temperature during emitter deposition. The HBTs in accordance with the present invention are useful in a number of important microwave applications such as log amps, a/d converters, and sample and hold circuits where high reliability is desired.
Inventors
- 👤 Dwight C. Streit
- 👤 Aaron K. Oki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:24
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/021; H10D10/80; H10D10/821; H10D62/00; H10D62/80; H10D62/85; H10D62/854; Y; Y10; Y10S; Y10S438/00; Y10S438/936
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
114 words
A method for producing n-p-n GaAs/AlGaAs heterojunction bipolar transistors, said method comprising the steps of: providing an undoped GaAs substrate; heating the substrate to a temperature approximately between 580° to 620° C.; growing a silicon doped AlGaAs collector with a minimum As/Ga flux ratio sufficient to maintain an arsenic stabilized surface; reducing the substrate temperature to a range between approximately 500° to 580° C.; growing a p-type GaAs base layer with the As/Ga flux ratio raised by a factor of two or more; raising the substrate temperature to approximately 600° C. or higher; and growing an AlGaAs emitter with the As/Ga flux ratio reduced to approximately the minimum level used for said collector growth.
Claim 2
Independent Claim
114 words
A method for producing n-p-n GaAs/AlGaAs heterojunction bipolar transistors, said method comprising the steps of: providing an undoped GaAs substrate; heating the substrate to a temperature approximately between 580° to 620° C.; growing a silicon doped AlGaAs collector with a minimum As/Ga flux ratio sufficient to maintain an arsenic stabilized surface; reducing the substrate temperature to a range between approximately 500° to 580° C.; growing a p-type GaAs base layer with the As/Ga flux ratio raised by a factor of two or more; raising the substrate temperature to approximately 600° C. or higher; and growing an AlGaAs emitter with the As/Ga flux ratio reduced to approximately the minimum level used for said collector growth.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said p-type GaAs base uses beryllium for a dopant.
Claim 4
Dependent Claim
31 words
The method of claim 1 further comprising the step of, after growing said emitter, reducing the substrate temperature to between 500° to 600° C.; and growing a top GaAs contact layer.
Claim 5
Dependent Claim
23 words
The method of claim 1 further comprising the steps of growing an n-plus type GaAs subcollector on said substrate before growing said collector.
Claim 6
Dependent Claim
51 words
The method for claim 1 when said step of growing said emitter further comprises the steps of: growing a first graded emitter layer having an increasing aluminum concentration on said base; growing a second AlGaAs emitter layer; and growing a third graded emitter layer having a gradually reducing concentration of aluminum.
Claim 7
Dependent Claim
22 words
The method of claim 1 further comprising the step of growing an InGaAs emitter contact layer on top of said emitter layer.
Claim 8
Dependent Claim
25 words
The method of claim 6 wherein said contact layer is grown with a reduced substrate temperature and said contact layer comprises an n-type GaAs contact.
Claim 9
Dependent Claim
29 words
The method of claim 7 wherein said contact layer comprises InGaAs and wherein said method further comprises the step of depositing a Ti-Pt-Au ohmic contact on said contact layer.
Claim 10
Independent Claim
75 words
A method for producing a heterojunction bipolar semiconductor device, said method comprising the steps of: providing a substrate material; heating the substrate to a temperature of approximately 580°-620° C.; growing a first layer with a minimum As/Ga flux ratio; reducing the substrate temperature to approximately 500° to 580° C.; and growing a GaAs second layer with the As/Ga flux ratio sufficient to maintain an arsenic stabilized surface raised by a factor of two or more.
Claim 11
Independent Claim
75 words
A method for producing a heterojunction bipolar semiconductor device, said method comprising the steps of: providing a substrate material; heating the substrate to a temperature of approximately 580°-620° C.; growing a first layer with a minimum As/Ga flux ratio; reducing the substrate temperature to approximately 500° to 580° C.; and growing a GaAs second layer with the As/Ga flux ratio sufficient to maintain an arsenic stabilized surface raised by a factor of two or more.
Claim 12
Dependent Claim
13 words
The method of claim 9 wherein said semiconductor device is an n-p-n transistor.
Claim 13
Dependent Claim
15 words
The method of claim 10 wherein said first layer is a silicon doped AlGaAs collector.
Claim 14
Dependent Claim
14 words
The method of claim 11 wherein said second layer is a p-type GaAs base.
Claim 15
Dependent Claim
15 words
The method of claim 12 wherein said p-type GaAs base uses beryllium for a dopant.
Claim 16
Dependent Claim
40 words
The method of claim 12 further comprising the steps of raising the substrate temperature to 600° C. or higher, and growing an AlGaAs emitter with the As/Ga flux ratio reduced to approximately the minimum level used for said collector growth.
Claim 17
Independent Claim
131 words
A method for producing n-p-n GaAs/AlGaAs heterojunction bipolar transistors, said method comprising the steps of: providing an undoped GaAs substrate; heating the substrate to a temperature approximately between 580° to 620° C.; growing a silicon doped AlGaAs collector with a minimum As/Ga flux ratio sufficient to maintain an arsenic stabilized surface; reducing the substrate temperature to a range between approximately 500° to 580° C.; growing a p-type GaAs base layer with the As/Ga flux ratio raised by a factor of two or more; raising the substrate temperature to approximately 600° C. or higher; growing an AlGaAs emitter with the As/Ga flux ratio reduced to approximately the minimum level used for said collector growth; and reducing the substrate temperature to between 500° to 600° C.; and growing a top GaAs contact layer.
Claim 18
Independent Claim
131 words
A method for producing n-p-n GaAs/AlGaAs heterojunction bipolar transistors, said method comprising the steps of: providing an undoped GaAs substrate; heating the substrate to a temperature approximately between 580° to 620° C.; growing a silicon doped AlGaAs collector with a minimum As/Ga flux ratio sufficient to maintain an arsenic stabilized surface; reducing the substrate temperature to a range between approximately 500° to 580° C.; growing a p-type GaAs base layer with the As/Ga flux ratio raised by a factor of two or more; raising the substrate temperature to approximately 600° C. or higher; growing an AlGaAs emitter with the As/Ga flux ratio reduced to approximately the minimum level used for said collector growth; and reducing the substrate temperature to between 500° to 600° C.; and growing a top GaAs contact layer.
References Cited (Backward Citations)
No citation records indexed.
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