Patent US6409904B1 successfully refreshed from Google Patents.
US6409904B1
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US
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Method and apparatus for depositing and controlling the texture of a thin film
Assignee: Novellus Systems Inc
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Filing: 1999-08-13
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Granted: 2002-06-25
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Expires: 2019-08-13
Abstract
Abstract The present invention provides a method and apparatus for plating a conductive material to a substrate and also modifying the physical properties of a conductive film while the substrate is being plated. The present invention further provides a method and apparatus that plates a conductive material on a workpiece surface in a “proximity” plating manner while a pad type material or other fixed feature is making contact with the workpiece surface in a “cold worked” manner. In this manner, energy stored in the cold worked regions of the plated layer is used to accelerate and enhance micro-structural recovery and growth. Thus, large grain size is obtained in the plated material at a lower annealing temperature and a shorter annealing time.
Inventors
- 👤 Cyprian Emeka Uzoh
- 👤 Homayoun Talieh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:42
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; B; B24; B24B; B24B37/00; B24B37/04; B24B37/042; B24B37/11; B24B37/20; B24B37/22; B24B37/24; B24B37/26; C; C25; C25D; C25D17/00; C25D17/10; C25D17/14; C25D21/00; C25D21/02; C25D5/00; C25D5/02; C25D5/04; C25D5/06; C25D5/22; C25D5/48; C25D5/50; C25D7/00; C25D7/12; C25D7/123; C25F; C25F7/00; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10P52/00; H10P52/40; H10P52/403; H10P72/00; H10P72/04; H10P72/0448; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
98 words
A method for altering the texture of a top portion of a conductive layer formed on a substrate, the method comprising the steps of: (1) plating the conductive layer on the substrate by applying a plating solution thereto using an anode and a pad disposed in proximity to the substrate, when the anode and the substrate are energized with electric power; and (2) altering the texture of the top portion of the conductive layer during a period when the pad makes contact with the top portion of the conductive layer, when the anode and the substrate are de-energized.
Claim 2
Independent Claim
98 words
A method for altering the texture of a top portion of a conductive layer formed on a substrate, the method comprising the steps of: (1) plating the conductive layer on the substrate by applying a plating solution thereto using an anode and a pad disposed in proximity to the substrate, when the anode and the substrate are energized with electric power; and (2) altering the texture of the top portion of the conductive layer during a period when the pad makes contact with the top portion of the conductive layer, when the anode and the substrate are de-energized.
Claim 3
Dependent Claim
13 words
A method according to claim 1 , wherein the conductive layer comprises copper.
Claim 4
Dependent Claim
46 words
A method according to claim 2 , wherein the altering step further comprises the step of using the pad to make contact with the top portion of the conductive layer at a pressure ranging from 0.0001 to 5 pounds per inch for 1 to 180 seconds.
Claim 5
Dependent Claim
20 words
A method according to claim 1 , wherein the anode comprises one of a cylindrical anode or a plate anode.
Claim 6
Dependent Claim
12 words
A method according to claim 4 , wherein the anode is movable.
Claim 7
Dependent Claim
30 words
A method according to claim 5 , wherein one of the anode and the substrate rotates in a circular manner in a range of 10 to 2000 revolutions per minute.
Claim 8
Dependent Claim
45 words
A method according to claim 1 , wherein the plating step further comprises the step of plating the conductive layer on the substrate when the pad and the substrate are spaced apart from each other at a distance ranging from 1 micron to 2 millimeters.
Claim 9
Dependent Claim
19 words
A method according to claim 1 , wherein the steps (1) and (2) are repeated a plurality of times.
Claim 10
Dependent Claim
32 words
A method according to claim 1 , wherein the surface of the substrate comprises the surface of one of a wafer, a flat panel, a magnetic film head, or a packaging device.
Claim 11
Dependent Claim
39 words
A method according to claim 1 , wherein the conductive layer comprises one of a copper, gold, aluminum, iron, nickel, chromium, indium, lead, tin, lead-tin alloys, nonleaded solderable alloys, silver, zinc, cadmium, titanium, tungsten, molybdenum, ruthenium, or combinations thereof.
Claim 12
Dependent Claim
58 words
A method according to claim 1 further comprising the step of, after altering the texture of the top portion of the conductive layer, annealing the conductive layer at a temperature between 50 to 400° C. for a period of 15 seconds to 60 minutes, thereby forming grains in the conductive layer that are between 1 to 100 microns.
Claim 13
Dependent Claim
31 words
A method according to claim 11 further comprising the step of polishing the annealed conductive layer such that a single crystal is formed in a via or trench of the substrate.
Claim 14
Independent Claim
91 words
A method for altering the texture of a top portion of a conductive layer formed on a seed layer on a substrate, the method comprising the steps of: (1) plating the conductive layer on the seed layer by applying a plating solution thereto, when an anode and the substrate are energized with electric power; and (2) altering the texture of the top portion of the conductive layer during a period when a pad makes contact with the top portion of the conductive layer, when the anode and the substrate are de-energized.
Claim 15
Independent Claim
91 words
A method for altering the texture of a top portion of a conductive layer formed on a seed layer on a substrate, the method comprising the steps of: (1) plating the conductive layer on the seed layer by applying a plating solution thereto, when an anode and the substrate are energized with electric power; and (2) altering the texture of the top portion of the conductive layer during a period when a pad makes contact with the top portion of the conductive layer, when the anode and the substrate are de-energized.
Claim 16
Dependent Claim
17 words
A method according to claim 13 , wherein the conductive layer and the seed layer comprises copper.
Claim 17
Dependent Claim
41 words
A method according to claim 13 , wherein the altering step further comprises the step of using the pad to make contact with the top portion of the conductive layer at a pressure ranging from 0.0001 to 5 pounds per inch.
Claim 18
Dependent Claim
35 words
A method according to claim 13 , wherein the altering step further comprises the step of using the pad to make contact with the top portion of the conductive layer for 1 to 180 seconds.
Claim 19
Dependent Claim
46 words
A method according to claim 13 , wherein the plating step further comprises the step of plating the conductive layer on the seed layer when the pad and the substrate are spaced apart from each other at a distance ranging from 1 micron to 2 millimeters.
Claim 20
Dependent Claim
19 words
A method according to claim 13 , wherein the steps (1) and (2) are repeated a plurality of times.
Claim 21
Dependent Claim
42 words
A method according to claim 13 , further comprising the step of, after altering the texture of the top portion of the conductive layer, annealing the conductive layer, thereby forming grains in the conductive layer that are between 1 to 100 microns.
Claim 22
Independent Claim
103 words
A method for altering the texture of a top portion of a conductive layer formed on a substrate, the method comprising the steps of: (1) plating the conductive layer on the substrate by applying a plating solution thereto using an anode and a pad disposed in proximity to the substrate, when the anode and the substrate are energized with electric power; and (2) altering the texture of the top portion of the conductive layer during a period when the pad makes contact with the top portion of the conductive layer by transforming the size or shape of certain grains in the conductive layer.
Claim 23
Independent Claim
103 words
A method for altering the texture of a top portion of a conductive layer formed on a substrate, the method comprising the steps of: (1) plating the conductive layer on the substrate by applying a plating solution thereto using an anode and a pad disposed in proximity to the substrate, when the anode and the substrate are energized with electric power; and (2) altering the texture of the top portion of the conductive layer during a period when the pad makes contact with the top portion of the conductive layer by transforming the size or shape of certain grains in the conductive layer.
Claim 24
Dependent Claim
13 words
A method according to claim 20 , wherein the conductive layer comprises copper.
Claim 25
Dependent Claim
32 words
A method according to claim 20 , wherein the altering step further comprises de-energizing the anode and the substrate when the pad makes contact with the top portion of the conductive layer.
Claim 26
Dependent Claim
41 words
A method according to claim 22 , wherein the altering step further comprises the step of using the pad to make contact with the top portion of the conductive layer at a pressure ranging from 0.0001 to 5 pounds per inch.
Claim 27
Dependent Claim
35 words
A method according to claim 22 , wherein the altering step further comprises the step of using the pad to make contact with the top portion of the conductive layer for 1 to 180 seconds.
Claim 28
Dependent Claim
20 words
A method according to claim 20 , wherein the anode comprises one of a cylindrical anode or a plate anode.
Claim 29
Dependent Claim
12 words
A method according to claim 25 , wherein the anode is movable.
Claim 30
Dependent Claim
30 words
A method according to claim 26 , wherein one of the anode and the substrate rotates in a circular manner in a range of 10 to 2000 revolutions per minute.
Claim 31
Dependent Claim
32 words
A method according to claim 20 , wherein the surface of the substrate comprises the surface of one of a wafer, a flat panel, a magnetic film head, or a packaging device.
Claim 32
Dependent Claim
58 words
A method according to claim 20 further comprising the step of, after altering the texture of the top portion of the conductive layer, annealing the conductive layer at a temperature between 50 to 400° C. for a period of 15 seconds to 60 minutes, thereby forming grains in the conductive layer that are between 1 to 100 microns.
Claim 33
Dependent Claim
31 words
A method according to claim 29 further comprising the step of polishing the annealed conductive layer such that a single crystal is formed in a via or trench of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-06-24 | 2005-12-24 | 2006-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-24 | 2009-12-24 | 2010-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-24 | 2013-12-24 | 2014-06-25 | $7700.00 | Window Closed / Lapsed |