Patent US6348705B1 successfully refreshed from Google Patents.
US6348705B1
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Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor
Assignee: Entegris Inc
•
Filing: 1999-12-22
•
Granted: 2002-02-19
•
Expires: 2019-12-22
Abstract
Abstract A fully amorphous thin film material that is related to ferroelectric compositions which is grown at low temperature, e.g., below 400° C., to yield a material with voltage independent capacitance, capacitance density of from about 1000 to about 10000 nF/cm2, leakage of <10-7 A/cm2, root mean square roughness <1 nanometer independent of film thickness, and an inverse capacitance that scales as a ratio of film thickness, reflecting uniform dielectric constant throughout the film. The film material may be employed for various capacitor structures, including decoupling capacitors, DRAM storage capacitors, feedthrough capacitors, bypass capacitors, capacitors for RC filters and capacitors for switched capacitor filters.
Inventors
- 👤 Bryan C. Hendrix
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 86
Claim 1
Independent Claim
67 words
A paraelectric amorphous metal oxide dielectric material, said material: (a) when formed as a thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; and (iii) a current leakage of <10 −7 A/cm 2 ; and (b) being annealable to produce a fefroelectric crystalline material in thin film and bulk forms.
Claim 2
Dependent Claim
67 words
A paraelectric amorphous metal oxide dielectric material, said material: (a) when formed as a thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; and (iii) a current leakage of <10 −7 A/cm 2 ; and (b) being annealable to produce a fefroelectric crystalline material in thin film and bulk forms.
Claim 3
Dependent Claim
16 words
The material of claim 1 , having a capacitance that is substantially independent of bias voltage.
Claim 4
Dependent Claim
24 words
The material of claim 1 , having a capacitance characterized by <0.5% change over a range of bias voltage from 0 to 250 kV/cm.
Claim 5
Dependent Claim
15 words
The material of claim 1 , having a capacitance that is substantially independent of temperature.
Claim 6
Dependent Claim
24 words
The material of claim 1 , having a capacitance characterized by <10% change over a range of temperature from 298° K. to 77° K.
Claim 7
Dependent Claim
15 words
The material of claim 1 , wherein the metal of said metal oxide comprises bismuth.
Claim 8
Dependent Claim
16 words
The material of claim 6 , wherein the metal of said metal oxide further comprises tantalum.
Claim 9
Dependent Claim
16 words
The material of claim 7 , wherein the metal of said metal oxide further comprises strontium.
Claim 10
Dependent Claim
15 words
The material of claim 1 , wherein the metal of said metal oxide comprises titanium.
Claim 11
Dependent Claim
16 words
The material of claim 9 , wherein the metal of said metal oxide further comprises barium.
Claim 12
Dependent Claim
16 words
The material of claim 10 , wherein the metal of said metal oxide further comprises strontium.
Claim 13
Dependent Claim
17 words
The material of claim 1 , as a component of a capacitor in a microelectronic device structure.
Claim 14
Dependent Claim
28 words
The material of claim 1 , selected from the group consisting of barium titanate, strontium titanate, barium strontium titanate, strontium bismuth tantalate, bismuth titanate, and lead zirconium titanate.
Claim 15
Dependent Claim
14 words
The material of claim 1 , comprising an A-site (ABO 3 ) deficient material.
Claim 16
Dependent Claim
38 words
The material of claim 1 , comprising PbO or Bi 2 O 3 additions to an oxide of one or more metals selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, and tungsten.
Claim 17
Dependent Claim
23 words
The material of claim 1 , comprising an alloying component selected from the group consisting of La, Nb, Zr, Hf, W, and Ba.
Claim 18
Dependent Claim
14 words
The material of claim 1 , comprising SrBi 2 Ta 2 O 9 .
Claim 19
Dependent Claim
14 words
The material of claim 1 , comprising Bi 4 Ti 3 O 12 .
Claim 20
Dependent Claim
10 words
The material of claim 1 , comprising (Ba,Sr)TiO 3 .
Claim 21
Dependent Claim
9 words
The material of claim 1 , comprising a Ba—Sr—Ti-oxide.
Claim 22
Dependent Claim
9 words
The material of claim 1 , comprising a Sr—Bi—Ta-oxide.
Claim 23
Dependent Claim
142 words
An amorphous, metal oxide, dielectric, paraelectric material, said material: (a) when formed as a paraelectric thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; (iii) a current leakage of <10 −7 A/cm 2 ; and (iv) a ratio of metal in the dielectric paraelectric thin film selected from the group consisting of: (I) 0 to 20% strontium, 5 to 70% bismuth and 10 to 95% tantalum; (II) 0 to 10% strontium, 5 to 55% bismuth and 35 to 95% tantalum; and (III) 0 to 5% strontium, 15 to 50% bismuth and 45 to 85% tantalum; and (b) a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material.
Claim 24
Dependent Claim
142 words
An amorphous, metal oxide, dielectric, paraelectric material, said material: (a) when formed as a paraelectric thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; (iii) a current leakage of <10 −7 A/cm 2 ; and (iv) a ratio of metal in the dielectric paraelectric thin film selected from the group consisting of: (I) 0 to 20% strontium, 5 to 70% bismuth and 10 to 95% tantalum; (II) 0 to 10% strontium, 5 to 55% bismuth and 35 to 95% tantalum; and (III) 0 to 5% strontium, 15 to 50% bismuth and 45 to 85% tantalum; and (b) a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material.
Claim 25
Dependent Claim
85 words
A thin film capacitor microelectronic device structure, comprising: a first electrode; a thin film of an amorphous paraelectric metal oxide material, said material: (a) when formed as a thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; and (iii) a current leakage of <10 −7 A/cm 2 ; and (b) being annealable to produce a ferroelectric crystalline material in thin film and bulk forms; and a second electrode.
Claim 26
Dependent Claim
85 words
A thin film capacitor microelectronic device structure, comprising: a first electrode; a thin film of an amorphous paraelectric metal oxide material, said material: (a) when formed as a thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; and (iii) a current leakage of <10 −7 A/cm 2 ; and (b) being annealable to produce a ferroelectric crystalline material in thin film and bulk forms; and a second electrode.
Claim 27
Dependent Claim
27 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material has a root mean square roughness <1 nanometer, independent of film thickness.
Claim 28
Dependent Claim
27 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material has an inverse capacitance that scales as a ratio of film thickness.
Claim 29
Dependent Claim
22 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film has substantially uniform dielectric constant throughout the film.
Claim 30
Dependent Claim
25 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance that is substantially independent of bias voltage.
Claim 31
Dependent Claim
31 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance characterized by <0.5% change over a range of from 0 to 250 kV/cm.
Claim 32
Dependent Claim
24 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance that is substantially independent of temperature.
Claim 33
Dependent Claim
32 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance characterized by <10% change over a range 1 from 298° K. to 77° K.
Claim 34
Dependent Claim
15 words
The structure of claim 23 , wherein the metal of said metal oxide comprises bismuth.
Claim 35
Dependent Claim
16 words
The structure of claim 31 , wherein the metal of said metal oxide further comprises tantalum.
Claim 36
Dependent Claim
16 words
The structure of claim 31 , wherein the metal of said metal oxide further comprises strontium.
Claim 37
Dependent Claim
15 words
The structure of claim 23 , wherein the metal of said metal oxide comprises titanium.
Claim 38
Dependent Claim
16 words
The structure of claim 34 , wherein the metal of said metal oxide further comprises barium.
Claim 39
Dependent Claim
16 words
The structure of claim 35 , wherein the metal of said metal oxide further comprises strontium.
Claim 40
Dependent Claim
40 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material comprises a material selected from the group consisting of barium titanate, strontium titanate, barium strontium titanate, strontium bismuth tantalate, bismuth titanate and lead zirconium titanate.
Claim 41
Dependent Claim
23 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material comprises an A-site (ABO 3 ) deficient material.
Claim 42
Dependent Claim
47 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material comprises PbO or Bi 2 O 3 additions to an oxide of one or more metals selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten.
Claim 43
Dependent Claim
32 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material comprises an alloying component selected from the group consisting of La, Nb, Zr, Hf, W and Ba.
Claim 44
Dependent Claim
23 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material comprises SrBi 2 Ta 2 O 9 .
Claim 45
Dependent Claim
23 words
The structure of claim 23 , wherein the amorphous paraelectric metal oxide thin film material comprises Bi 4 Ti 3 O 12 .
Claim 46
Dependent Claim
18 words
The structure of claim 23 , wherein the amorphous metal oxide thin film material comprises (Ba,Sr)TiO 3 .
Claim 47
Dependent Claim
17 words
The structure of claim 23 , wherein the amorphous metal oxide thin film material comprises a Ba—Sr—Ti-oxide.
Claim 48
Dependent Claim
17 words
The structure of claim 23 , wherein the amorphous metal oxide thin film material comprises a Sr—Bi—Ta-oxide.
Claim 49
Dependent Claim
11 words
The structure of claim 23 , comprising an integrated circuit chip.
Claim 50
Dependent Claim
159 words
A thin film capacitor microelectronic device structure, comprising: a first electrode; an amorphous paraelectric, metal oxide, dielectric thin film material, said material: (a) when formed as a paraelectric thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; (iii) a current leakage of <10 −7 A/cm 2 ; and (iv) a ratio of metal in the dielectric paraelectric thin film selected from the group consisting of: (I) 0 to 20% strontium, 5 to 70% bismuth and 10 to 95% tantalum; (II) 0 to 10% strontium, 5 to 55% bismuth and 35 to 95% tantalum; and (III) 0 to 5% strontium, 15 to 50% bismuth and 45 to 85% tantalum; and (b) a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material; and a second electrode.
Claim 51
Dependent Claim
159 words
A thin film capacitor microelectronic device structure, comprising: a first electrode; an amorphous paraelectric, metal oxide, dielectric thin film material, said material: (a) when formed as a paraelectric thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; (iii) a current leakage of <10 −7 A/cm 2 ; and (iv) a ratio of metal in the dielectric paraelectric thin film selected from the group consisting of: (I) 0 to 20% strontium, 5 to 70% bismuth and 10 to 95% tantalum; (II) 0 to 10% strontium, 5 to 55% bismuth and 35 to 95% tantalum; and (III) 0 to 5% strontium, 15 to 50% bismuth and 45 to 85% tantalum; and (b) a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material; and a second electrode.
Claim 52
Independent Claim
111 words
A method of forming a thin film capacitor structure on a substrate, comprising: forming a first electrode on the substrate; depositing on the first electrode a layer of amorphous paraelectric metal oxide thin film material, said material: (a) when formed as a thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; and (iii) a current leakage of <10 −7 A/cm 2 ; and (b) being annealable to produce a ferroelectric crystalline material in thin film and bulk forms; and forming a second electrode on the layer of amorphous paraelectric metal oxide thin film material.
Claim 53
Independent Claim
111 words
A method of forming a thin film capacitor structure on a substrate, comprising: forming a first electrode on the substrate; depositing on the first electrode a layer of amorphous paraelectric metal oxide thin film material, said material: (a) when formed as a thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; and (iii) a current leakage of <10 −7 A/cm 2 ; and (b) being annealable to produce a ferroelectric crystalline material in thin film and bulk forms; and forming a second electrode on the layer of amorphous paraelectric metal oxide thin film material.
Claim 54
Dependent Claim
27 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material has a root mean square roughness <1 nanometer, independent of film thickness.
Claim 55
Dependent Claim
27 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material has an inverse capacitance that scales as a ratio of film thickness.
Claim 56
Dependent Claim
23 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material has substantially uniform dielectric constant throughout the film.
Claim 57
Dependent Claim
25 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance that is substantially independent of bias voltage.
Claim 58
Dependent Claim
33 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance characterized by <0.5% change over a range of bias voltage from 0 to 250 kV/cm.
Claim 59
Dependent Claim
24 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance that is substantially independent of temperature.
Claim 60
Dependent Claim
33 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material has a capacitance characterized by <10% change over a range of temperature from 298° K. to 77° K.
Claim 61
Dependent Claim
15 words
The method of claim 48 , wherein the metal of said metal oxide comprises bismuth.
Claim 62
Dependent Claim
16 words
The method of claim 56 , wherein the metal of said metal oxide further comprises tantalum.
Claim 63
Dependent Claim
16 words
The method of claim 57 , wherein the metal of said metal oxide further comprises strontium.
Claim 64
Dependent Claim
15 words
The method of claim 48 , wherein the metal of said metal oxide comprises titanium.
Claim 65
Dependent Claim
16 words
The method of claim 59 , wherein the metal of said metal oxide further comprises barium.
Claim 66
Dependent Claim
16 words
The method of claim 60 , wherein the metal of said metal oxide further comprises strontium.
Claim 67
Dependent Claim
40 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises a material selected from the group consisting of barium titanate, strontium titanate, barium strontium titanate, strontium bismuth tantalate, bismuth titanate and lead zirconium titanate.
Claim 68
Dependent Claim
23 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises an A-site (ABO 3 ) deficient material.
Claim 69
Dependent Claim
47 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises PbO or Bi 2 O 3 additions to an oxide of one or more metals selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten.
Claim 70
Dependent Claim
32 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises an alloying component selected from the group consisting of La, Nb, Zr, Hf, W and Ba.
Claim 71
Dependent Claim
23 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises SrBi 2 Ta 2 O 9 .
Claim 72
Dependent Claim
23 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises Bi 4 Ti 3 O 12 .
Claim 73
Dependent Claim
19 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises (Ba,Sr)TiO 3 .
Claim 74
Dependent Claim
18 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises a Ba—Sr—Ti-oxide.
Claim 75
Dependent Claim
18 words
The method of claim 48 , wherein the amorphous paraelectric metal oxide thin film material comprises a Sr—Bi—Ta-oxide.
Claim 76
Dependent Claim
33 words
The method of claim 48 , wherein said step of depositing on the first electrode a layer of amorphous paraelectric metal oxide thin film material is conducted at a temperature below 500° C.
Claim 77
Dependent Claim
33 words
The method of claim 48 , wherein said step of depositing on the first electrode a layer of amorphous paraelectric metal oxide thin film material is conducted at a temperature below 400° C.
Claim 78
Dependent Claim
27 words
The method of claim 48 , wherein said step of depositing on the first electrode a layer of amorphous paraelectric metal oxide thin film material comprises MOCVD.
Claim 79
Dependent Claim
29 words
The method of claim 48 , wherein said step of depositing on the first electrode a layer of amorphous paraelectric metal oxide thin film material comprises liquid delivery MOCVD.
Claim 80
Independent Claim
189 words
A method of forming a thin film capacitor structure on a substrate, comprising: forming a first electrode on the substrate; depositing on the first electrode a layer of amorphous paraelectric, metal oxide, dielectric, thin film material, said material, said material: (a) when formed as a paraelectric thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; (iii) a current leakage of <10 −7 A/cm 2 ; and (iv) a ratio of metal in the dielectric paraelectric thin film selected from the group consisting of: (I) 0 to 20% strontium, 5 to 70% bismuth and 10 to 95% tantalum; (II) 0 to 10% strontium, 5 to 55% bismuth and 35 to 95% tantalum; and (III) 0 to 5% strontium, 15 to 50% bismuth and 45 to 85% tantalum; and (b) a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material; and forming a second electrode on the layer of amorphous paraelectric metal oxide thin film material.
Claim 81
Independent Claim
189 words
A method of forming a thin film capacitor structure on a substrate, comprising: forming a first electrode on the substrate; depositing on the first electrode a layer of amorphous paraelectric, metal oxide, dielectric, thin film material, said material, said material: (a) when formed as a paraelectric thin film by CVD, having properties comprising: (i) a voltage independent capacitance; (ii) a capacitance density of from about 1000 to about 10,000 nF/cm 2 ; (iii) a current leakage of <10 −7 A/cm 2 ; and (iv) a ratio of metal in the dielectric paraelectric thin film selected from the group consisting of: (I) 0 to 20% strontium, 5 to 70% bismuth and 10 to 95% tantalum; (II) 0 to 10% strontium, 5 to 55% bismuth and 35 to 95% tantalum; and (III) 0 to 5% strontium, 15 to 50% bismuth and 45 to 85% tantalum; and (b) a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material; and forming a second electrode on the layer of amorphous paraelectric metal oxide thin film material.
Claim 82
Dependent Claim
94 words
A high k amorphous paraelectric metal oxide thin film material having a voltage independent capacitance, a capacitance density greater than 1000 nF/cm 2 , and a current leakage of <10 −7 A/cm 2 , wherein the high k amorphous paraelectric metal oxide thin film material has a composition selected from the group consisting of a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material and a ferroelectric in both crystalline thin film and crystalline bulk forms.
Claim 83
Dependent Claim
94 words
A high k amorphous paraelectric metal oxide thin film material having a voltage independent capacitance, a capacitance density greater than 1000 nF/cm 2 , and a current leakage of <10 −7 A/cm 2 , wherein the high k amorphous paraelectric metal oxide thin film material has a composition selected from the group consisting of a stoichiometric composition that is different from the stoichiometric composition of a bulk crystalline material of the same elements that is annealable to yield a bulk ferroelectric material and a ferroelectric in both crystalline thin film and crystalline bulk forms.
Claim 84
Dependent Claim
73 words
A paraelectric amorphous metal oxide thin film dielectric material with a capacitance density greater than 1000 nF/cm 2 , less than 0.5% change of capacitance in a range from 0 to 250 kV/cm bias, less than 10% change of capacitance in a range of temperature of from 298° K. to 77° K., an inverse capacitance that scales as a ratio of film thickness, and a current leakage of <10 −7 A/cm 2 .
Claim 85
Dependent Claim
73 words
A paraelectric amorphous metal oxide thin film dielectric material with a capacitance density greater than 1000 nF/cm 2 , less than 0.5% change of capacitance in a range from 0 to 250 kV/cm bias, less than 10% change of capacitance in a range of temperature of from 298° K. to 77° K., an inverse capacitance that scales as a ratio of film thickness, and a current leakage of <10 −7 A/cm 2 .
Claim 86
Dependent Claim
22 words
The material of claim 77 , formed by a process wherein all processing is carried out at temperature less than 400° C.
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