Patent US6335240B1 successfully refreshed from Google Patents.
US6335240B1
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Capacitor for a semiconductor device and method for forming the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1999-01-06
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Granted: 2002-01-01
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Expires: 2019-01-06
Abstract
Abstract A capacitor having high capacitance using a silicon-containing conductive layer as a storage node, and a method for forming the same, are provided. The capacitor includes a storage node, an amorphous Al2O3 dielectric layer, and a plate node. The amorphous Al2O3 layer is formed by a method in which reactive vapor phase materials are supplied on the storage node, for example, an atomic layered deposition method. Also, the storage node is processed by rapid thermal nitridation before forming the amorphous Al2O3 layer. The amorphous Al2O3 layer is densified by annealing at approximately 850° C. after forming a plate node, to thereby realize the equivalent thickness of an oxide layer which approximates a theoretical value of 30 Å.
Inventors
- 👤 Yeong-kwan Kim
- 👤 In-seon Park
- 👤 Sang-min Lee
- 👤 Chang-soo Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:47
CPC Classifications
H; H10; H10D; H10D84/00; H10D1/00; H10D1/60; H10D1/68; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6529; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
115 words
A method for forming a capacitor of a semiconductor device, comprising: (a) forming a storage node; (b) forming a dielectric layer of amorphous Al 2 O 3 , on the storage node; and (c) forming a plate node on the dielectric layer, wherein a primary densification is performed on the amorphous Al 2 O 3 dielectric layer, after forming the plate node, wherein a secondary densification is additionally performed on the amorphous Al 2 O 3 dielectric layer, before forming a plate node, and wherein the secondary densification is performed by annealing the amorphous Al 2 O 3 dielectric layer at a temperature below the temperature of crystallizing the amorphous Al 2 O 3 layer.
Claim 2
Independent Claim
115 words
A method for forming a capacitor of a semiconductor device, comprising: (a) forming a storage node; (b) forming a dielectric layer of amorphous Al 2 O 3 , on the storage node; and (c) forming a plate node on the dielectric layer, wherein a primary densification is performed on the amorphous Al 2 O 3 dielectric layer, after forming the plate node, wherein a secondary densification is additionally performed on the amorphous Al 2 O 3 dielectric layer, before forming a plate node, and wherein the secondary densification is performed by annealing the amorphous Al 2 O 3 dielectric layer at a temperature below the temperature of crystallizing the amorphous Al 2 O 3 layer.
Claim 3
Dependent Claim
15 words
The method of claim 1 , wherein the secondary densification is performed at 150-900° C.
Claim 4
Dependent Claim
34 words
The method of claim 1 , wherein the secondary densification is performed using an ambient gas selected from the group consisting of O 2 , NO and N 2 gas, or in a vacuum.
References Cited (Backward Citations)
US3982906A
Cited
US3894872A
Cited
US4252579A
Cited
US4366613A
Cited
US4481283A
Cited
US4891684A
Cited
US4983544A
Cited
US5153685A
Cited
US4983422A
Cited
US5104636A
Cited
US5141603A
Cited
US4936957A
Cited
US5374570A
Cited
US5196722A
Cited
US5362666A
Cited
US5365097A
Cited
US5488579A
Cited
US5698869A
Cited
US6048764A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-31 | 2005-07-02 | 2006-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-31 | 2009-07-02 | 2010-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-31 | 2013-07-02 | 2014-01-01 | $7700.00 | Window Closed / Lapsed |