US4891684A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
•
Filing: 1987-08-04
•
Granted: 1990-01-02
•
Expires: 2007-08-04
Abstract
Abstract A reaction-preventing film is provided between a capacitor insulating film made of a material having a high dielectric constant, such as Ta 2 O 5 , and an upper electrode in order to prevent a reaction of the upper electrode with the capacitor insulating film. This effectively prevents the reaction between the upper electrode and the capacitor caused by a heat treatment conducted after formation of the capacitor, and hence prevents an increase in leakage current caused by the reaction. Thus, the reliability of a semiconductor device is remarkably increased.
Inventors
- 👤 Yasushiro Nishioka
- 👤 Hiroshi Shinriki
- 👤 Noriyuki Sakuma
- 👤 Kiichiro Mukai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:51
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/68; H10D1/682; H10D1/688; H01; H01G; H01G4/00; H01G4/002; H01G4/005; H01G4/33; H10B; H10B12/00; H10B12/30
Claims Analysis
Total Claims: 46
Claim 1
Independent Claim
119 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and material of said upper electrode, the capacitor insulating film being made of a member selected from the group consisting of Ta 2 O 5 , Nb 2 O 5 , TiO 2 , ZrO 2 , Al 2 O 3 , HfO and Y 2 O 3 .
Claim 2
Dependent Claim
119 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and material of said upper electrode, the capacitor insulating film being made of a member selected from the group consisting of Ta 2 O 5 , Nb 2 O 5 , TiO 2 , ZrO 2 , Al 2 O 3 , HfO and Y 2 O 3 .
Claim 3
Dependent Claim
24 words
A semiconductor device as claimed in claim 1, wherein a silicon dioxide film is interposed between the lower electrode and the capacitor insulating film.
Claim 4
Dependent Claim
17 words
A semiconductor device as claimed in claim 2, wherein the lower electrode is a polycrystalline silicon film.
Claim 5
Dependent Claim
17 words
A semiconductor device as claimed in claim 1, wherein the lower electrode is a polycrystalline silicon film.
Claim 6
Dependent Claim
34 words
A semiconductor device ax claimed in claim 1, wherein said reaction-preventing film is made of a member selected from the group consisting of SiO 2 , Si 3 N 4 , and phosphosilicate glass.
Claim 7
Dependent Claim
20 words
A semiconductor device as claimed in claim 5, wherein the thickness of said reaction-preventing film is 10 to 100 Å.
Claim 8
Dependent Claim
19 words
A semiconductor device as claimed in claim 6, wherein the thickness of said reaction-preventing film is 20 to 100Å.
Claim 9
Dependent Claim
43 words
A semiconductor device as claimed in claim 1, wherein said upper electrode is made of a member selected from the group consisting of polycrystalline silicon, WSi 2 , MoSi 2 , TaSi 2 , TiSi 2 , W, Mo, Ta, TiN and Cr.
Claim 10
Dependent Claim
16 words
A semiconductor device as claimed in claim 1, wherein said lower electrode comprises a silicon substrate.
Claim 11
Dependent Claim
45 words
A semiconductor device as claimed in claim 1, wherein said lower electrode is a film made of a member selected from the group consisting of polycrystalline silicon, WSi 2 , MoSi 2 , TaSi 2 , TiSi 2 , W, Mo, Ta, TiN and Cr.
Claim 12
Dependent Claim
29 words
A semiconductor device as claimed in claim 9 or 10, wherein an oxide film is formed on said lower electrode by oxidation of the surface of said lower electrode.
Claim 13
Dependent Claim
47 words
A semiconductor device as claimed in claim 9 or 10, wherein material of the capacitor insulating film can react with material of the lower electrode, and wherein a second reaction-preventing film is formed on said lower electrode, interposed between the lower electrode and the capacitor insulating film.
Claim 14
Dependent Claim
35 words
A semiconductor device as claimed in claim 12, wherein said second reaction-preventing film is made of a member selected from the group consisting of SiO 2 , Si 3 N 4 , and phosphosilicate glass.
Claim 15
Dependent Claim
20 words
A semiconductor device as claimed in claim 1, wherein the thickness of said capacitor insulating film is 20 to 350Å.
Claim 16
Dependent Claim
124 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and material of said upper electrode, wherein said reaction-preventing film is a SiO 2 film or a phosphosilicate glass film and wherein a Si 3 N 4 film is formed on said SiO 2 film or said phosphosilicate glass film by nitriding the surface of said SiO 2 film or said phosphosilicate glass film.
Claim 17
Dependent Claim
124 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and material of said upper electrode, wherein said reaction-preventing film is a SiO 2 film or a phosphosilicate glass film and wherein a Si 3 N 4 film is formed on said SiO 2 film or said phosphosilicate glass film by nitriding the surface of said SiO 2 film or said phosphosilicate glass film.
Claim 18
Dependent Claim
24 words
A semiconductor device as claimed in claim 15, wherein a silicon dioxide film is interposed between the lower electrode and the capacitor insulating film.
Claim 19
Dependent Claim
16 words
A semiconductor device as claimed in claim 16, wherein the lower electrode is polycrystalline silicone film.
Claim 20
Dependent Claim
17 words
A semiconductor device as claimed in claim 15, wherein the lower electrode is a polycrystalline silicon film.
Claim 21
Dependent Claim
43 words
A semiconductor device as claimed in claim 15, wherein said upper electrode is made of a member selected from the group consisting of polycrystalline silicon, WSi 2 , MoSi 2 , TaSi 2 , TiSi 2 , W, Mo, Ta, TiN and Cr.
Claim 22
Dependent Claim
16 words
A semiconductor device as claimed in claim 15, wherein said lower electrode comprises a silicon substrate.
Claim 23
Dependent Claim
45 words
A semiconductor device as claimed in claim 15, wherein said lower electrode is a film made of a member selected from the group consisting of polycrystalline silicon, WSi 2 , MoSi 2 , TaSi 2 , TiSi 2 , W, Mo, Ta, TiN and Cr.
Claim 24
Dependent Claim
29 words
A semiconductor device as claimed in claim 20 or 21, wherein an oxide film is formed on said lower electrode by oxidation of the surface of said lower electrode.
Claim 25
Dependent Claim
47 words
A semiconductor device as claimed in claim 20 or 21, wherein material of the capacitor insulating film can react with material of the lower electrode, and wherein a second reaction-preventing film is formed on said lower electrode, interposed between the lower electrode and the capacitor insulating film.
Claim 26
Dependent Claim
35 words
A semiconductor device as claimed in claim 23, wherein said second reaction-preventing film is made of a member selected from the group consisting of SiO 2 , Si 3 N 4 , and phosphosilicate glass.
Claim 27
Dependent Claim
111 words
A semiconductor having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and material of said upper electrode, wherein said reaction-preventing film is a Si 3 N 4 film and a SiO 2 film is formed on said Si 3 N 4 film by oxidizing the surface of said Si 3 N 4 film.
Claim 28
Dependent Claim
111 words
A semiconductor having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and material of said upper electrode, wherein said reaction-preventing film is a Si 3 N 4 film and a SiO 2 film is formed on said Si 3 N 4 film by oxidizing the surface of said Si 3 N 4 film.
Claim 29
Dependent Claim
24 words
A semiconductor device as claimed in claim 25, wherein a silicon dioxide film is interposed between the lower electrode and the capacitor insulating film.
Claim 30
Dependent Claim
17 words
A semiconductor device as claimed in claim 26, wherein the lower electrode is a polycrystalline silicon film.
Claim 31
Dependent Claim
17 words
A semiconductor device as claimed in claim 25, wherein the lower electrode is a polycrystalline silicon film.
Claim 32
Dependent Claim
43 words
A semiconductor device as claimed in claim 25, wherein said upper electrode is made of a member selected from the group consisting of polycrystalline silicon, WSi 2 , MoSi 2 , TaSi 2 , TiSi 2 , W, Mo, Ta, TiN and Cr.
Claim 33
Dependent Claim
16 words
A semiconductor device as claimed in claim 25, wherein said lower electrode comprises a silicon substrate.
Claim 34
Dependent Claim
45 words
A semiconductor device as claimed in claim 25, wherein said lower electrode is a film made of a member selected from the group consisting of polycrystalline silicon, WSi 2 , MoSi 2 , TaSi 2 , TiSi 2 , W, Mo, Ta, TiN and Cr.
Claim 35
Dependent Claim
29 words
A semiconductor device as claimed in claim 30 or 31, wherein an oxide film is formed on said lower electrode by oxidation of the surface of said lower electrode.
Claim 36
Dependent Claim
47 words
A semiconductor device as claimed in claim 30 or 31, wherein material of the capacitor insulating film can react with material of the lower electrode, and wherein a second reaction-preventing film is formed on said lower electrode, interposed between the lower electrode and the capacitor insulating film.
Claim 37
Dependent Claim
35 words
A semiconductor device as claimed in claim 33, wherein said second reaction-preventing film is made of a member selected from the group consisting of SiO 2 , Si 3 N 4 , and phosphosilicate glass.
Claim 38
Dependent Claim
131 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, said capacitor insulating film being made of a material that reacts with material of which the upper electrode is made, selected from the group consisting of Ta 2 O 5 , Nb 2 O 5 , TiO 2 , ZrO 2 , Al 2 O 3 , HfO and Y 2 O 3 , and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 39
Dependent Claim
131 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, said capacitor insulating film being made of a material that reacts with material of which the upper electrode is made, selected from the group consisting of Ta 2 O 5 , Nb 2 O 5 , TiO 2 , ZrO 2 , Al 2 O 3 , HfO and Y 2 O 3 , and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 40
Dependent Claim
143 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor, insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, said capacitor insulating film being made of a material that reacts with material of which the upper electrode is made, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film being a SiO 2 film or a phosphosilicate glass film, with a Si 3 N 4 film being provided on said SiO 2 film or said phosphosilicate glass film by nitriding the surface of said SiO 2 film or said phosphosilicate glass film, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 41
Dependent Claim
143 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor, insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, said capacitor insulating film being made of a material that reacts with material of which the upper electrode is made, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film being a SiO 2 film or a phosphosilicate glass film, with a Si 3 N 4 film being provided on said SiO 2 film or said phosphosilicate glass film by nitriding the surface of said SiO 2 film or said phosphosilicate glass film, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 42
Dependent Claim
131 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, said capacitor insulating film being made of a material that reacts with material of which the upper electrode is made, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film being a Si 3 N 4 film and a SiO 2 film provided on said Si 3 N 4 film by oxidizing the surface of said Si 3 N 4 film, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 43
Dependent Claim
131 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulating film, said capacitor insulating film being made of a material that reacts with material of which the upper electrode is made, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film being a Si 3 N 4 film and a SiO 2 film provided on said Si 3 N 4 film by oxidizing the surface of said Si 3 N 4 film, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 44
Dependent Claim
101 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulting film, said capacitor insulating film being made of a high dielectric constant metal oxide that reacts with material of which the upper electrode is made, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 45
Dependent Claim
101 words
A semiconductor device having a capacitor, which comprises a lower electrode, a capacitor insulating film formed on said lower electrode and made of a high dielectric constant material, an upper electrode formed on said capacitor insulting film, said capacitor insulating film being made of a high dielectric constant metal oxide that reacts with material of which the upper electrode is made, and a reaction-preventing film interposed between said capacitor insulating film and said upper electrode, said reaction-preventing film having a thickness so as to prevent a reaction between material of said capacitor insulating film and the material of said upper electrode.
Claim 46
Dependent Claim
40 words
A semiconductor device as claimed in claim 38, wherein said upper electrode is made of a member selected from the group consisting of polycrystalline silicon, WSi 2 , MoSi 2 , TaSi 2 , W, Mo, Ta, TiN and Cr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-01 | 1993-07-03 | 1994-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-01 | 1997-07-03 | 1998-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-01 | 2001-07-03 | 2002-01-02 | $7700.00 | Window Closed / Lapsed |