US4252579A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
Assignee: International Business Machines Corp
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Filing: 1979-05-07
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Granted: 1981-02-24
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Expires: 1999-05-07
Abstract
Abstract A method for making highly dense, dielectrically isolated, U-shaped MOSFET. In a preferred method a monocrystalline silicon P substrate with a N+ layer thereon, a P layer on the N+ layer and a N+ layer on the P layer is provided. A pattern of U-shaped openings is formed in the body through to the P substrate by the reactively ion etching technique. This pattern of openings is filled with an insulator material, such as silicon dioxide. A conductive layer of N+ doped polycrystalline silicon is deposited on the bare surface of this silicon body. Openings are formed in the polycrystalline silicon over the silicon dioxide filled openings. A silicon dioxide layer is then grown by, for example, thermal oxidation over the polycrystalline silicon layer. Reactively ion etching is used to produce substantially U-shaped openings through the layers over the P substrate and into the P substrate to substantially bisect the regions of monocrystalline silicon. This etching step forms two storage cells in the monocrystalline silicon areas and a bit line for each column of cells in the polycrystalline silicon layer. A silicon dioxide gate insulator is grownon the monocrystalline silicon surfaces of the U-shaped openings by thermal oxidation in a suitable ambient. Conductively doped polycrystalline silicon is deposited in the U-shaped openings over the silicon dioxide gate insulator layer until the openings are filled and cover the surface of the body. The conductively doped polycrystalline silicon on the surface of the body is etched in a suitable pattern to produce the word lines of the random access memory device.
Inventors
- 👤 Irving T. Ho
- 👤 Jacob Riseman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:08
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0383; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/35; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H10B12/30; H10B12/39; H10B12/395; H10D; H10D30/00; H10D30/60; H10D30/63; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/051; Y10S148/085; Y10S148/117; Y10S148/131
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
149 words
Method for producing a matrix of highly dense vertical MOSFET devices which are dielectrically isolated from one another comprising: providing a P monocrystalline silicon substrate having a P layer thereon and a N+ layer; reactively ion etching a pattern of U-shaped openings in the body into the P substrate which isolates regions of said monocrystalline silicon substrate and layers thereover; filling said openings with silicon dioxide; reactive ion etching a substantially U-shaped opening through said layers over said P substrate and into said substrate to substantially bisect said regions of monocrystalline silicon; growing on the monocrystalline silicon surface of said U-shaped opening a gate silicon dioxide by thermal oxidation in a suitable ambient; depositing doped polycrystalline silicon into the said openings and over said silicon dioxide surface layer until said openings are filled; and etching said doped polycrystalline silicon to form the word line of said random access memory.
Claim 2
Dependent Claim
149 words
Method for producing a matrix of highly dense vertical MOSFET devices which are dielectrically isolated from one another comprising: providing a P monocrystalline silicon substrate having a P layer thereon and a N+ layer; reactively ion etching a pattern of U-shaped openings in the body into the P substrate which isolates regions of said monocrystalline silicon substrate and layers thereover; filling said openings with silicon dioxide; reactive ion etching a substantially U-shaped opening through said layers over said P substrate and into said substrate to substantially bisect said regions of monocrystalline silicon; growing on the monocrystalline silicon surface of said U-shaped opening a gate silicon dioxide by thermal oxidation in a suitable ambient; depositing doped polycrystalline silicon into the said openings and over said silicon dioxide surface layer until said openings are filled; and etching said doped polycrystalline silicon to form the word line of said random access memory.
Claim 3
Dependent Claim
51 words
The method of claim 1 wherein said MOSFET devices are part of a random access memory wherein the N+ layer between said U-shaped silicon dioxide filled openings and said U-shaped polycrystalline silicon filled openings are bit lines of said memory and said P layer is the channel of said MOSFET devices.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the said U-shaped openings are slightly wider at the surface than at the bottom of the opening.
Claim 5
Dependent Claim
37 words
The method of claim 1 wherein said P layer is formed on said P substrate by epitaxial growth and said N+ layer is formed by a blanket diffusion into a surface portion of said epitaxial P layer.
Claim 6
Dependent Claim
34 words
The method of claim 1 wherein said P layer is formed on said P substrate by epitaxial growth and said N+ layer is formed by epitaxial growth on the surface of said P layer.
Claim 7
Independent Claim
224 words
The method for producing a MOSFET single sidewall random access memory device comprising: providing a P monocrystalline silicon substrate having a N+ layer thereon, a P layer on the said N+ layer, and a N+ layer on the said P layer; reactively ion etching a pattern of U-shaped openings in the body into the P substrate which isolates regions of said monocrystalline silicon substrate and layers thereover; filling said openings with silicon dioxide; reactively ion etching any material from the surface of said N+ layer on said P layer; depositing a layer of N+ doped polycrystalline silicon on the surface of said N+ layer on said P layer and on said silicon dioxide filled openings; forming openings in said polycrystalline silicon over said silicon dioxide filled openings; growing a silicon dioxide layer over the surface of said polycrystalline silicon layer; reactively ion etching a substantially U-shaped opening through said layers over said P substrate and into said substrate to substantially bisect said regions of monocrystalline silicon; growing on the monocrystalline silicon surface of said U-shaped opening a gate silicon dioxide insulator by thermal oxidation in a suitable ambient; depositing doped polycrystalline silicon into the said openings and over said silicon dioxide surface layers until said openings are filled; and etching said doped polycrystalline silicon to form the word line of said random access memory.
Claim 8
Independent Claim
224 words
The method for producing a MOSFET single sidewall random access memory device comprising: providing a P monocrystalline silicon substrate having a N+ layer thereon, a P layer on the said N+ layer, and a N+ layer on the said P layer; reactively ion etching a pattern of U-shaped openings in the body into the P substrate which isolates regions of said monocrystalline silicon substrate and layers thereover; filling said openings with silicon dioxide; reactively ion etching any material from the surface of said N+ layer on said P layer; depositing a layer of N+ doped polycrystalline silicon on the surface of said N+ layer on said P layer and on said silicon dioxide filled openings; forming openings in said polycrystalline silicon over said silicon dioxide filled openings; growing a silicon dioxide layer over the surface of said polycrystalline silicon layer; reactively ion etching a substantially U-shaped opening through said layers over said P substrate and into said substrate to substantially bisect said regions of monocrystalline silicon; growing on the monocrystalline silicon surface of said U-shaped opening a gate silicon dioxide insulator by thermal oxidation in a suitable ambient; depositing doped polycrystalline silicon into the said openings and over said silicon dioxide surface layers until said openings are filled; and etching said doped polycrystalline silicon to form the word line of said random access memory.
Claim 9
Dependent Claim
62 words
The method of claim 6 wherein said N+ polycrystalline silicon is the bit line of said memory, said N+ layers are source/drain regions of the said MOSFET, and P layer separates said N+ layers and provides the region for location of the MOSFET channel, and the junction between said P substrate and said N+ layer thereon is the capacitor of said memory.
Claim 10
Dependent Claim
18 words
The method of claim 6 wherein said N+ layers and said P layers are formed by epitaxial growth.
Claim 11
Dependent Claim
34 words
The method of claim 6 wherein said openings are filled with silicon dioxide by subjecting said body to an oxidation ambient and an elevated temperature to thermally oxidize the silicon surfaces in said openings.
Claim 12
Dependent Claim
20 words
The method of claim 6 and further comprising depositing a passivating layer over entire surface of said random access memory.
Claim 13
Dependent Claim
28 words
The method of claim 6 wherein the new areas of monocrystalline silicon resulting from the said bisection of said regions of monocrystalline silicon are substantially equal in size.
Claim 14
Dependent Claim
54 words
The method of claim 6 wherein said N+ layer on said P substrate is formed by epitaxial growth, said P layer is formed by epitaxial growth and said N+ layer on said P layer is formed by N+ outdiffusion from said N+ polycrystalline layer into a portion of the thickness of said P layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-24 | 1984-08-25 | 1985-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-24 | 1988-08-25 | 1989-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-24 | 1992-08-25 | 1993-02-24 | $7700.00 | Window Closed / Lapsed |