Patent US6316800B1 successfully refreshed from Google Patents.
US6316800B1
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US
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Boride electrodes and barriers for cell dielectrics
Assignee: Mosaid Technologies Inc
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Filing: 2000-05-04
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Granted: 2001-11-13
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Expires: 2020-05-04
Abstract
Abstract Titanium boride (TiB x ), zirconium boride (ZrB x ) and hafnium boride (HfB x ) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.
Inventors
- 👤 Husam N. Al-Shareef
- 👤 Scott J. Deboer
- 👤 Dan Gealy
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:59
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10B12/30; H10B12/31; H10B12/312; H10B12/48; H10B12/485; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
54 words
A capacitor, comprising a first conductive layer, a dielectric layer, and a second conductive layer, wherein said first conductive layer comprises hemispherical grained polysilicon and at least one of said first and second conductive layers comprises a material selected from the group consisting of TiB 2 , ZrB 2 , and HfB 2 .
Claim 2
Dependent Claim
54 words
A capacitor, comprising a first conductive layer, a dielectric layer, and a second conductive layer, wherein said first conductive layer comprises hemispherical grained polysilicon and at least one of said first and second conductive layers comprises a material selected from the group consisting of TiB 2 , ZrB 2 , and HfB 2 .
Claim 3
Dependent Claim
62 words
A capacitor, comprising a first conductive layer, a dielectric layer over said first conductive layer, and a second conductive layer over said dielectric layer, wherein said second conductive layer comprises a material selected from the group consisting of TiB x , ZrB x , and HfB x , wherein x is 1-3 and said dielectric layer comprises Ta 2 O 5 .
Claim 4
Dependent Claim
62 words
A capacitor, comprising a first conductive layer, a dielectric layer over said first conductive layer, and a second conductive layer over said dielectric layer, wherein said second conductive layer comprises a material selected from the group consisting of TiB x , ZrB x , and HfB x , wherein x is 1-3 and said dielectric layer comprises Ta 2 O 5 .
Claim 5
Dependent Claim
98 words
A capacitor, comprising a first conductive layer, a dielectric layer, and a second conductive layer, wherein said first conductive layer comprises hemispherical grained polysilicon and at least one of said first and second conductive layers comprises a material selected from the group consisting of TiB X , ZrB X and HfB x , where x is from 1 to 3; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 6
Dependent Claim
98 words
A capacitor, comprising a first conductive layer, a dielectric layer, and a second conductive layer, wherein said first conductive layer comprises hemispherical grained polysilicon and at least one of said first and second conductive layers comprises a material selected from the group consisting of TiB X , ZrB X and HfB x , where x is from 1 to 3; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 7
Dependent Claim
97 words
A capacitor, comprising a first conductive layer, a dielectric layer over said first conductive layer, a second conductive layer over said dielectric layer, and a conductive barrier layer which comprises a material selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3, over said second conductive layer; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 8
Dependent Claim
97 words
A capacitor, comprising a first conductive layer, a dielectric layer over said first conductive layer, a second conductive layer over said dielectric layer, and a conductive barrier layer which comprises a material selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3, over said second conductive layer; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 9
Dependent Claim
104 words
An integrated circuit comprising a capacitor, said capacitor comprising a first conductive layer, a dielectric layer, and a second conductive layer, wherein said first conductive layer comprises hemispherical grained polysilicon and at least one of said first and second conductive layers comprises a material selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 10
Dependent Claim
104 words
An integrated circuit comprising a capacitor, said capacitor comprising a first conductive layer, a dielectric layer, and a second conductive layer, wherein said first conductive layer comprises hemispherical grained polysilicon and at least one of said first and second conductive layers comprises a material selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 11
Dependent Claim
84 words
A memory cell comprising: a transistor; and a capacitor coupled to said transistor and having a top electrode comprising a dielectric diffusion barrier layer selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3; wherein said capacitor further comprises a dielectric layer selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Titanate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 12
Dependent Claim
84 words
A memory cell comprising: a transistor; and a capacitor coupled to said transistor and having a top electrode comprising a dielectric diffusion barrier layer selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3; wherein said capacitor further comprises a dielectric layer selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Titanate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 13
Dependent Claim
16 words
The memory cell of claim 6 wherein said dielectric layer comprises Ta 2 O 5 .
Claim 14
Dependent Claim
103 words
An integrated memory circuit comprising: a plurality of capacitors; and a plurality of bit lines, which are connectable to said capacitors; wherein said capacitors comprise a bottom electrode comprising hemispherical grained polysilicon, a dielectric layer, and a top electrode comprising a dielectric diffusion barrier layer selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3; and wherein said dielectric layer is selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 15
Dependent Claim
103 words
An integrated memory circuit comprising: a plurality of capacitors; and a plurality of bit lines, which are connectable to said capacitors; wherein said capacitors comprise a bottom electrode comprising hemispherical grained polysilicon, a dielectric layer, and a top electrode comprising a dielectric diffusion barrier layer selected from the group consisting of TiB x , ZrB x and HfB x , where x is from 1 to 3; and wherein said dielectric layer is selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 16
Dependent Claim
17 words
The integrated memory circuit of claim 8 wherein said dielectric layer comprises Ta 2 O 5 .
Claim 17
Dependent Claim
104 words
An integrated circuit comprising a capacitor, said capacitor comprising a first conductive layer, a dielectric layer over said first conductive layer, a second conductive layer over said dielectric layer, and a conductive barrier layer over said second conductive layer, said barrier layer comprising a material selected from the group consisting of TiB X , ZrB X and HfB X , where x is from 1 to 3, and said dielectric layer comprising a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT), and Bismuth Zirconium Titanate (BZT).
Claim 18
Dependent Claim
104 words
An integrated circuit comprising a capacitor, said capacitor comprising a first conductive layer, a dielectric layer over said first conductive layer, a second conductive layer over said dielectric layer, and a conductive barrier layer over said second conductive layer, said barrier layer comprising a material selected from the group consisting of TiB X , ZrB X and HfB X , where x is from 1 to 3, and said dielectric layer comprising a material selected from the group consisting of an oxide of tantalum, Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT), and Bismuth Zirconium Titanate (BZT).
Claim 19
Dependent Claim
16 words
The integrated circuit of claim 10 wherein said dielectric layer comprises Ta 2 O 5 .
Claim 20
Dependent Claim
90 words
A memory cell comprising: a transistor; and a capacitor coupled to said transistor and having a top electrode having a dielectric diffusion barrier layer comprising a material selected from the group consisting of TiB X , ZrB X and HfB X , where x is from 1 to 3; wherein said capacitor further comprises a dielectric layer comprising a material selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Titanate (SBT), and Bismuth Zirconium Titanate (BZT).
Claim 21
Dependent Claim
90 words
A memory cell comprising: a transistor; and a capacitor coupled to said transistor and having a top electrode having a dielectric diffusion barrier layer comprising a material selected from the group consisting of TiB X , ZrB X and HfB X , where x is from 1 to 3; wherein said capacitor further comprises a dielectric layer comprising a material selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Titanate (SBT), and Bismuth Zirconium Titanate (BZT).
Claim 22
Dependent Claim
16 words
The memory cell of claim 12 wherein said dielectric layer comprises Ta 2 O 5 .
Claim 23
Dependent Claim
108 words
An integrated memory circuit comprising: a plurality of capacitors; and a plurality of bit lines, which are connectable to said capacitors; wherein said capacitors comprise a dielectric layer, a conductive layer over said dielectric layer, and a dielectric diffusion barrier layer comprising a material selected from the group consisting of TiB X , ZrB X and HfB X , where x is from 1 to 3, over said conductive layer; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT), and Bismuth Zirconium Titanate (BZT).
Claim 24
Dependent Claim
108 words
An integrated memory circuit comprising: a plurality of capacitors; and a plurality of bit lines, which are connectable to said capacitors; wherein said capacitors comprise a dielectric layer, a conductive layer over said dielectric layer, and a dielectric diffusion barrier layer comprising a material selected from the group consisting of TiB X , ZrB X and HfB X , where x is from 1 to 3, over said conductive layer; and wherein said dielectric layer comprises a material selected from the group consisting of an oxide of tantalum, Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT), and Bismuth Zirconium Titanate (BZT).
Claim 25
Dependent Claim
15 words
The integrated memory circuit of claim 14 wherein said dielectric layer comprises Ta 2 O.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-11-12 | 2005-05-14 | 2005-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-11-12 | 2009-05-14 | 2009-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-11-12 | 2013-05-14 | 2013-11-13 | $7700.00 | Window Closed / Lapsed |