Method for developing ultra-thin resist films

Claim 1

A method of applying a developing liquid onto a semiconductor wafer substrate having a UTR film thereon so as to minimize unexposed film thickness loss during development, said method comprising the steps of: rinsing with de-ionized water the wafer substrate having the UTR film thereon and spinning dry the same prior to the step of applying the developing liquid so as to wash away any anti-reflective materials; applying a developing liquid onto a semiconductor wafer substrate having a UTR film thereon while spinning the wafer substrate at a rotational speed of 100 to 1,500 r.p.m. for 0.5 to 5 seconds from a developer nozzle off-set from the central position of the wafer substrate; the developer nozzle being off-set from either side of the central position of the wafer substrate by approximately 1 mm to 8 mm; applying continuously the developing liquid onto the wafer substrate while decreasing the rotational speed to less than 100 r.p.m. for 1 second; allowing the developing liquid to contact the wafer substrate for about 4 to 8.5 seconds; rinsing off the developing liquid; and spinning dry the wafer substrate.

Claim 2

A method of applying a developing liquid onto a semiconductor wafer substrate having a UTR film thereon so as to minimize unexposed film thickness loss during development, said method comprising the steps of: rinsing with de-ionized water the wafer substrate having the UTR film thereon and spinning dry the same prior to the step of applying the developing liquid so as to wash away any anti-reflective materials; applying a developing liquid onto a semiconductor wafer substrate having a UTR film thereon while spinning the wafer substrate at a rotational speed of 100 to 1,500 r.p.m. for 0.5 to 5 seconds from a developer nozzle off-set from the central position of the wafer substrate; the developer nozzle being off-set from either side of the central position of the wafer substrate by approximately 1 mm to 8 mm; applying continuously the developing liquid onto the wafer substrate while decreasing the rotational speed to less than 100 r.p.m. for 1 second; allowing the developing liquid to contact the wafer substrate for about 4 to 8.5 seconds; rinsing off the developing liquid; and spinning dry the wafer substrate.