US5962196A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deep ultraviolet light photoresist processing
Assignee: Intel Corp
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Filing: 1993-10-13
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Granted: 1999-10-05
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Expires: 2013-10-13
Abstract
Abstract Process for post exposure treatment of a latent image on a semiconductor wafer. After a deep ultraviolet (UV) photoresist has been exposed, the wafer, including the latent image in the attached photoresist, is maintained in an inert gas to protect the resist from the air atmosphere. Then the latent image is baked to stabilize the image.
Inventors
- 👤 Siddhartha Das
- 👤 Harry H. Fujimoto
- 👤 Henry Gaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 08:38
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/004; G03F7/0045
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
136 words
In a semiconductor fabrication process comprising the steps of: coating a wafer with photoresist, said photoresist producing a photoacid when irradiated with radiation of a predetermined range of wavelengths, said photoacid catalyzing a chemical reaction when said photoresist is baked to increase the solubility said photoresist in the non irradiated areas with respect to the a solubility of said photoresist in the non irradiated areas; irradiating said photoresist on said wafer with said radiation of a predetermined wavelength to generate said photoacid defining a latent image in said photoresist on said wafer, said irradiating step following said coating step; preventing said photoacid from being neutralized by maintaining said wafer coated with said photoresist containing said latent image in water; and baking said latent image in photoresist on said wafer, said baking step following said preventing step.
Claim 2
Dependent Claim
136 words
In a semiconductor fabrication process comprising the steps of: coating a wafer with photoresist, said photoresist producing a photoacid when irradiated with radiation of a predetermined range of wavelengths, said photoacid catalyzing a chemical reaction when said photoresist is baked to increase the solubility said photoresist in the non irradiated areas with respect to the a solubility of said photoresist in the non irradiated areas; irradiating said photoresist on said wafer with said radiation of a predetermined wavelength to generate said photoacid defining a latent image in said photoresist on said wafer, said irradiating step following said coating step; preventing said photoacid from being neutralized by maintaining said wafer coated with said photoresist containing said latent image in water; and baking said latent image in photoresist on said wafer, said baking step following said preventing step.
Claim 3
Dependent Claim
28 words
The process as in claim 1, wherein said photoresist is a deep UV photoresist, said deep UV photoresist being responsive to radiation of a wavelength of 100-300 nm.
Claim 4
Dependent Claim
27 words
The process as in claim 1, wherein said photoresist is an I-line photoresist, said I-line photoresist being responsive to radiation of a wavelength of approximately 365 nm.
Claim 5
Dependent Claim
144 words
A process for forming a photoresist pattern comprising the steps of: coating a wafer with a photoresist, said photoresist producing a photoacid when irradiated with radiation of a predetermined range of wavelengths, said photoacid catalyzing a chemical reaction when said photoresist is baked to increase the solubility of said photoresist in the irradiated areas with respect to the solubility of said photoresist in the non irradiated areas; irradiating said photoresist on said wafer with said radiation of a predetermined wavelength to generate said photoacid defining a latent image in said photoresist on said wafer, said irradiating step following said coating step; preventing said photoacid from being neutralized by maintaining said wafer coated with said photoresist in a nitrogen atmosphere, said preventing step following said irradiating step; and baking said latent image in said photoresist on said wafer, said baking step following said maintaining step.
Claim 6
Dependent Claim
144 words
A process for forming a photoresist pattern comprising the steps of: coating a wafer with a photoresist, said photoresist producing a photoacid when irradiated with radiation of a predetermined range of wavelengths, said photoacid catalyzing a chemical reaction when said photoresist is baked to increase the solubility of said photoresist in the irradiated areas with respect to the solubility of said photoresist in the non irradiated areas; irradiating said photoresist on said wafer with said radiation of a predetermined wavelength to generate said photoacid defining a latent image in said photoresist on said wafer, said irradiating step following said coating step; preventing said photoacid from being neutralized by maintaining said wafer coated with said photoresist in a nitrogen atmosphere, said preventing step following said irradiating step; and baking said latent image in said photoresist on said wafer, said baking step following said maintaining step.
Claim 7
Dependent Claim
28 words
The process as in claim 4, wherein said photoresist is a deep UV photoresist, said deep UV photoresist being responsive to radiation of a wavelength of 100-300 nm.
Claim 8
Dependent Claim
27 words
The process as in claim 4, wherein said photoresist is an I-line photoresist, said I-line photoresist being responsive to radiation of a wavelength of approximately 365 nm.
Claim 9
Dependent Claim
161 words
A process for forming a photoresist pattern comprising the steps of: coating a wafer with photoresist, said photoresist producing a photoacid when irradiated with radiation of a predetermined range of wavelengths, said photoacid catalyzing a chemical reaction when said photoresist is baked to increase the solubility of said photoresist in the non irradiated areas; maintaining said wafer coated with said photoresist in a nitrogen atmosphere, said maintaining step following said coating step; irradiating said photoresist on said wafer with said radiation of a predetermined wavelength to generate said photoacid defining a latent image in said photoresist on said wafer, wherein said irradiation occurs in said nitrogen atmosphere, said irradiating step following said coating step; preventing said photoacid from being neutralized by maintaining said latent image in said photoresist on said wafer in said nitrogen atmosphere, said preventing step following said irradiating step; and baking said latent image in said photoresist on said wafer, said baking step following said second maintaining step.
Claim 10
Dependent Claim
161 words
A process for forming a photoresist pattern comprising the steps of: coating a wafer with photoresist, said photoresist producing a photoacid when irradiated with radiation of a predetermined range of wavelengths, said photoacid catalyzing a chemical reaction when said photoresist is baked to increase the solubility of said photoresist in the non irradiated areas; maintaining said wafer coated with said photoresist in a nitrogen atmosphere, said maintaining step following said coating step; irradiating said photoresist on said wafer with said radiation of a predetermined wavelength to generate said photoacid defining a latent image in said photoresist on said wafer, wherein said irradiation occurs in said nitrogen atmosphere, said irradiating step following said coating step; preventing said photoacid from being neutralized by maintaining said latent image in said photoresist on said wafer in said nitrogen atmosphere, said preventing step following said irradiating step; and baking said latent image in said photoresist on said wafer, said baking step following said second maintaining step.
Claim 11
Dependent Claim
28 words
The process as in claim 7, wherein said photoresist is a deep UV photoresist, said deep UV photoresist being responsive to radiation of a wavelength of 100-300 nm.
Claim 12
Dependent Claim
27 words
The process as in claim 7, wherein said photoresist is an I-line photoresist, said I-line photoresist being responsive lo radiation of a wavelength of approximately 365 nm.
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