US4992356A
Expired / Lapsed
US
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Process of developing a radiation imaged product with trinuclear novolak oligomer having o-naphthoquinone diazide sulfonyl group
Assignee: Olin Microelectronic Chemicals Inc
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Filing: 1990-06-08
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Granted: 1991-02-12
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Expires: 2010-06-08
Abstract
Abstract A trinuclear novolak oligomer of the formula (I): ##STR1## wherein each X is selected from the group consisting of hydroxyl group and halide group and Y is selected from the group consisting of a lower alkyl group having 1-4 carbon atoms and halogen atom.
Inventors
- 👤 Alfred T. Jeffries, III
- 👤 Andrew J. Blakeney
- 👤 Medhat A. Toukhy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:07
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; C; C07; C07C; C07C309/00; C07C309/63; C07C309/72; C07C309/76; C07C39/00; C07C39/12; C07C39/15; C08; C08G; C08G8/00; C08G8/04; C08G8/08; C08G8/28
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
194 words
The process of developing an image-wise exposed photoresist-coated substrate comprising: (1) coating said substrate with a radiation sensitive mixture useful as a positive working photoresist, said mixture comprising an admixture of an alkali soluble binder resin and a photoactive compound of formula II: ##STR10## wherein each X' is selected from the group consisting of hydrogen, OD and halide; Y' is selected from the group consisting of a lower alkyl group having 1-4 carbon atoms and halogen atom; and D is selected from the group consisting of o-naphthoquinone diazide sulfonyl group and hydrogen; with the proviso that at least two Ds are o-naphthoquinone diazide sulfonyl groups; and wherein the amount of said binder resin being about 60% to 95% by weight and the amount of photoactive compound being from about 5% to about 40% by weight, based on the total solids content of said radiation sensitive mixture; (2) subjecting said coating on said substrate to an image-wise exposure of radiation; and (3) subjecting said image-wise exposed coated substrate to a developing solution the exposed areas of said radiation-exposed coating are dissolved and removed from the substrate, thereby resulting in positive image-wise pattern in the coating.
Claim 2
Dependent Claim
194 words
The process of developing an image-wise exposed photoresist-coated substrate comprising: (1) coating said substrate with a radiation sensitive mixture useful as a positive working photoresist, said mixture comprising an admixture of an alkali soluble binder resin and a photoactive compound of formula II: ##STR10## wherein each X' is selected from the group consisting of hydrogen, OD and halide; Y' is selected from the group consisting of a lower alkyl group having 1-4 carbon atoms and halogen atom; and D is selected from the group consisting of o-naphthoquinone diazide sulfonyl group and hydrogen; with the proviso that at least two Ds are o-naphthoquinone diazide sulfonyl groups; and wherein the amount of said binder resin being about 60% to 95% by weight and the amount of photoactive compound being from about 5% to about 40% by weight, based on the total solids content of said radiation sensitive mixture; (2) subjecting said coating on said substrate to an image-wise exposure of radiation; and (3) subjecting said image-wise exposed coated substrate to a developing solution the exposed areas of said radiation-exposed coating are dissolved and removed from the substrate, thereby resulting in positive image-wise pattern in the coating.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein said radiation is ultraviolet light.
Claim 4
Dependent Claim
34 words
The process of claim 1 wherein said image-wise exposed coated substrate is subjected to a post exposure bake at a temperature from about 90° C. to about 120° C. before said development step (3).
Claim 5
Dependent Claim
27 words
The process of claim 1 wherein said developing solution comprises an aqueous solution of an alkali metal hydroxide or silicates or an aqueous solution of tetramethylammonium hydroxide.
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