US5667922A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of semiconductor fabrication utilizing rinse of polyimide film
Assignee: Allegro Microsystems LLC
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Filing: 1996-04-26
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Granted: 1997-09-16
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Expires: 2016-04-26
Abstract
Abstract A method of fabricating a patterned polyimide film on a semiconductor wafer including spin coating the wafer with a polyimide precursor solution, baking the polyimide precursor solution in order to remove solvents from and to slightly cure the solution to form a polyimide film, and rinsing the polyimide film with deionized water immediately following the baking step prior to further processing. The rinsing in part serves to further remove solvents associated with the polyimide film. The process continues with photolithography techniques in which the wafer spin coated with a selected photoresist to form a photoresist film immediately following the rinsing step, and a baking of the photoresist film. Thereafter, the photoresist film is exposed to radiation through a photomask, and developed with a solution to form a pattern. The pattern is then etched into the polyimide film with the solution. The remaining portions of the photoresist are removed with a chemical stripper. The wafer is then baked to fully cure the pattern formed in the polyimide film. The present invention provides an improved semiconductor fabrication process which yields better defined patterns and greatly enhances the uniformity and repeatability of the photolithographic process.
Inventors
- 👤 Thomas J. Martiska
- 👤 Stephen Darling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:54
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/16; G03F7/168
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
58 words
A method of processing a semiconductor wafer, comprising: coating said wafer with a polyimide precursor solution; baking said polyimide precursor solution following said coating step in order to remove solvents from and to slightly cure said solution to form a partially cured polyimide film; and rinsing said polyimide film following said baking step and prior to further processing.
Claim 2
Independent Claim
58 words
A method of processing a semiconductor wafer, comprising: coating said wafer with a polyimide precursor solution; baking said polyimide precursor solution following said coating step in order to remove solvents from and to slightly cure said solution to form a partially cured polyimide film; and rinsing said polyimide film following said baking step and prior to further processing.
Claim 3
Dependent Claim
15 words
The method of claim 1, wherein said step of rinsing comprises rinsing with deionized water.
Claim 4
Dependent Claim
17 words
The method of claim 1, wherein said rinsing step further removes solvents associated with said polyimide film.
Claim 5
Dependent Claim
28 words
The method of claim 1 further comprising: coating said wafer with a selected photoresist following said rinsing step to form a photoresist film; and baking said photoresist film.
Claim 6
Dependent Claim
38 words
The method of claim 4 further comprising: exposing said photoresist film to radiation through a photomask; developing said photoresist film with a solution to form a pattern; and etching said pattern into said polyimide film with said solution.
Claim 7
Dependent Claim
30 words
The method of claim 5 further comprising: removing portions of said photoresist with a chemical stripper; and baking said wafer to fully cure the pattern formed in said polyimide film.
Claim 8
Independent Claim
70 words
A method of fabricating a patterned polyimide film on a semiconductor wafer, comprising: coating said wafer with a polyimide precursor solution; baking said wafer and said polyimide precursor solution following said coating step in order to remove solvents from and to slightly cure said solution to form a partially cured polyimide film; and rinsing said polyimide film with deionized water immediately following said baking step and prior to further processing.
Claim 9
Independent Claim
70 words
A method of fabricating a patterned polyimide film on a semiconductor wafer, comprising: coating said wafer with a polyimide precursor solution; baking said wafer and said polyimide precursor solution following said coating step in order to remove solvents from and to slightly cure said solution to form a partially cured polyimide film; and rinsing said polyimide film with deionized water immediately following said baking step and prior to further processing.
Claim 10
Dependent Claim
17 words
The method of claim 7, wherein said rinsing step further removes solvents associated with said polyimide film.
Claim 11
Dependent Claim
33 words
The method of claim 7 further comprising: coating said wafer with a selected photoresist following said rinsing step to form a photoresist film immediately following said rinsing step; and baking said photoresist film.
Claim 12
Dependent Claim
38 words
The method of claim 9 further comprising: exposing said photoresist film to radiation through a photomask; developing said photoresist film with a solution to form a pattern; and etching said pattern into said polyimide film with said solution.
Claim 13
Dependent Claim
34 words
The method of claim 10 further comprising: removing portions of said photoresist with a chemical stripper following said etching step; and baking said wafer to fully cure the pattern formed in said polyimide film.
Claim 14
Dependent Claim
69 words
A semiconductor wafer having a patterned polyimide film produced thereon, said patterned polyimide film produced by coating said wafer with a polyimide precursor solution, baking said polyimide precursor solution following said coating in order to remove solvents from and to slightly cure said solution to form a partially cured polyimide film, and rinsing said polyimide film with deionized water immediately following said baking step and prior to further processing.
Claim 15
Dependent Claim
69 words
A semiconductor wafer having a patterned polyimide film produced thereon, said patterned polyimide film produced by coating said wafer with a polyimide precursor solution, baking said polyimide precursor solution following said coating in order to remove solvents from and to slightly cure said solution to form a partially cured polyimide film, and rinsing said polyimide film with deionized water immediately following said baking step and prior to further processing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-09-15 | 2001-03-17 | 2001-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-15 | 2005-03-17 | 2005-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-15 | 2009-03-17 | 2009-09-16 | $7700.00 | Window Closed / Lapsed |