US6232156B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1998-04-14
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Granted: 2001-05-15
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Expires: 2018-04-14
Abstract
Abstract A method of manufacturing a semiconductor device which has a crystalline silicon film comprises the steps of forming crystal nuclei in a surface region of an amorphous silicon film and then growing the crystals from the nuclei by a laser light. Typically the crystal nuclei are silicon crystals or metal silicides having an equivalent structure as silicon crystal.
Inventors
- 👤 Hisashi Ohtani
- 👤 Akiharu Miyanaga
- 👤 Junichi Takeyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3454; H10P14/38; H10P14/3802; H10P14/3806; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
46 words
A method of manufacturing a semiconductor device, said method comprising the steps of: forming a non-single crystalline semiconductor film comprising silicon on an insulating surface; forming discrete silicon crystals within said semiconductor film by heating; and growing said discrete silicon crystals by irradiating with a light.
Claim 2
Independent Claim
46 words
A method of manufacturing a semiconductor device, said method comprising the steps of: forming a non-single crystalline semiconductor film comprising silicon on an insulating surface; forming discrete silicon crystals within said semiconductor film by heating; and growing said discrete silicon crystals by irradiating with a light.
Claim 3
Independent Claim
74 words
A method of manufacturing a semiconductor device, said method comprising the steps of: forming a non-single crystalline semiconductor film comprising silicon on an insulating surface; forming discrete silicon crystals within a portion of said semiconductor film by heating; and growing said discrete silicon crystals by irradiating with a light so that said portion of said semiconductor film is crystallized, wherein said portion of said semiconductor film includes an active region of said semiconductor device.
Claim 4
Independent Claim
74 words
A method of manufacturing a semiconductor device, said method comprising the steps of: forming a non-single crystalline semiconductor film comprising silicon on an insulating surface; forming discrete silicon crystals within a portion of said semiconductor film by heating; and growing said discrete silicon crystals by irradiating with a light so that said portion of said semiconductor film is crystallized, wherein said portion of said semiconductor film includes an active region of said semiconductor device.
Claim 5
Independent Claim
80 words
A method of manufacturing a semiconductor device, said method comprising the steps of: forming a non-single crystalline semiconductor film comprising silicon on an insulating surface; forming discrete silicon crystals in an upper portion of said semiconductor film by heating; and performing a crystallization of said semiconductor film by irradiating with a light so that said portion of said semiconductor film is crystallized, wherein said crystallization of said semiconductor film proceeds only from said discrete silicon crystals through said semiconductor film.
Claim 6
Independent Claim
80 words
A method of manufacturing a semiconductor device, said method comprising the steps of: forming a non-single crystalline semiconductor film comprising silicon on an insulating surface; forming discrete silicon crystals in an upper portion of said semiconductor film by heating; and performing a crystallization of said semiconductor film by irradiating with a light so that said portion of said semiconductor film is crystallized, wherein said crystallization of said semiconductor film proceeds only from said discrete silicon crystals through said semiconductor film.
Claim 7
Dependent Claim
13 words
A method according to claim 1 wherein said light is a laser light.
Claim 8
Dependent Claim
14 words
A method according to claim 1 wherein said light is applied by a lamp.
Claim 9
Dependent Claim
17 words
A method according to claim 1 , wherein said semiconductor device is a thin film integrated circuit.
Claim 10
Dependent Claim
34 words
A method according to claim 1 wherein said semiconductor film includes a catalyst element being capable of promoting crystallization of said semiconductor film at a concentration not higher than 3×10 18 cm −3 .
Claim 11
Dependent Claim
13 words
A method according to claim 2 wherein said light is a laser light.
Claim 12
Dependent Claim
15 words
A method according to claim 2 , wherein said light is applied by a lamp.
Claim 13
Dependent Claim
16 words
A method according to claim 2 wherein said semiconductor device is a thin film integrated circuit.
Claim 14
Dependent Claim
32 words
A method according to claim 2 wherein said semiconductor film includes a catalyst element being capable of promoting said semiconductor film at a concentration not higher than 3×10 18 cm −3 .
Claim 15
Dependent Claim
13 words
A method according to claim 3 wherein said light is a laser light.
Claim 16
Dependent Claim
14 words
A method according to claim 3 wherein said light is applied by a lamp.
Claim 17
Dependent Claim
16 words
A method according to claim 3 wherein said semiconductor device is a thin film integrated circuit.
Claim 18
Dependent Claim
32 words
A method according to claim 3 wherein said semiconductor film includes a catalyst element being capable of promoting said semiconductor film at a concentration not higher than 3×10 18 cm −3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-14 | 2004-11-13 | 2005-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-14 | 2008-11-13 | 2009-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-14 | 2012-11-13 | 2013-05-15 | $7700.00 | Window Closed / Lapsed |