US5587330A
Expired / Lapsed
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Method for manufacturing semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-10-18
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Granted: 1996-12-24
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Expires: 2015-10-18
Abstract
Abstract In producing a top gate type insulated gate semiconductor device in which a non-single crystalline semiconductor layer is used to form a channel forming region, after a gate electrode is formed on the non-single crystalline semiconductor layer through a gate insulating film, while ultraviolet light is irradiated to the non-single crystalline semiconductor layer, heating treatment is performed at a temperature of from 300 DEG to 600 DEG C. in an atmosphere containing nitrogen oxide or hydrogen nitride, in order to neutralize a recombination center in the non-single crystalline film or a boundary between the non-single crystalline film and the gate insulating film.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:54
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6717; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D30/675; Y; Y10; Y10S; Y10S148/00; Y10S148/09; Y10S148/15; Y10S438/00; Y10S438/909; Y10S438/91
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
75 words
A method for producing a semiconductor device comprising the steps of: forming a top gate type thin film transistor, wherein at least a portion of a channel forming region adjacent to a gate insulating film is a semiconductor; and irradiating the top gate type thin film transistor with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including a nitrogen oxide while heating treatment is performed at 300° C. or higher.
Claim 2
Independent Claim
75 words
A method for producing a semiconductor device comprising the steps of: forming a top gate type thin film transistor, wherein at least a portion of a channel forming region adjacent to a gate insulating film is a semiconductor; and irradiating the top gate type thin film transistor with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including a nitrogen oxide while heating treatment is performed at 300° C. or higher.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the semiconductor is non-single crystalline.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein the semiconductor is single crystalline.
Claim 5
Dependent Claim
22 words
The method of claim 1 wherein the nitrogen oxide includes one of N 2 O, NO, NO 2 and NO x (0.5<x<2).
Claim 6
Dependent Claim
23 words
The method of claim 1 wherein the top gate type thin film transistor has a gate electrode formed over the channel forming region.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein the atmosphere further includes nitrogen hydride.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein the heating treatment is performed at 600° C. or lower.
Claim 9
Independent Claim
75 words
A method for producing a semiconductor device comprising the steps of: forming a top gate type thin film transistor, wherein at least a portion of a channel forming region adjacent to a gate insulating film is a semiconductor; and irradiating the top gate type thin film transistor with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including a nitrogen hydride while heating treatment is performed at 300° C. or higher.
Claim 10
Independent Claim
75 words
A method for producing a semiconductor device comprising the steps of: forming a top gate type thin film transistor, wherein at least a portion of a channel forming region adjacent to a gate insulating film is a semiconductor; and irradiating the top gate type thin film transistor with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including a nitrogen hydride while heating treatment is performed at 300° C. or higher.
Claim 11
Dependent Claim
11 words
The method of claim 8 wherein the semiconductor is non-single crystalline.
Claim 12
Dependent Claim
11 words
The method of claim 8 wherein the semiconductor is single crystalline.
Claim 13
Dependent Claim
16 words
The method of claim 8 wherein the heating treatment is performed at 600° C. or lower.
Claim 14
Dependent Claim
24 words
The method of claim 8 wherein the nitrogen hydride includes one of NH 3 , N 2 H 4 , and NH x (1<x<3).
Claim 15
Dependent Claim
23 words
The method of claim 8 wherein the top gate type thin film transistor has a gate electrode formed over the channel forming region.
Claim 16
Independent Claim
81 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; forming a gate electrode on the semiconductor film through a gate insulating film; introducing an impurity into the semiconductor film using the gate electrode as a mask; and irradiating the semiconductor film with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including nitrogen oxide while heating treatment is performed at 300° C. or higher.
Claim 17
Independent Claim
81 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; forming a gate electrode on the semiconductor film through a gate insulating film; introducing an impurity into the semiconductor film using the gate electrode as a mask; and irradiating the semiconductor film with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including nitrogen oxide while heating treatment is performed at 300° C. or higher.
Claim 18
Dependent Claim
12 words
The method of claim 14 wherein the semiconductor film is non-single crystalline.
Claim 19
Dependent Claim
12 words
The method of claim 14 wherein the semiconductor film is single crystalline.
Claim 20
Dependent Claim
16 words
The method of claim 14 wherein the heating treatment is performed at 600° C. or lower.
Claim 21
Dependent Claim
22 words
The method of claim 14 wherein the nitrogen oxide includes one of N 2 O, NO, NO 2 and NO x (0.5<x<2).
Claim 22
Dependent Claim
12 words
The method of claim 14 wherein the atmosphere further includes nitrogen hydride.
Claim 23
Dependent Claim
24 words
The method of claim 19 wherein the nitrogen hydride includes one of NH 3 , N 2 H 4 , and NH x (1<x<3).
Claim 24
Independent Claim
81 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; forming a gate electrode on the semiconductor film through a gate insulating film; introducing an impurity into the semiconductor film using the gate electrode as a mask; and irradiating the semiconductor film with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including nitrogen hydride while heating treatment is performed at 300° C. or higher.
Claim 25
Independent Claim
81 words
A method for producing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; forming a gate electrode on the semiconductor film through a gate insulating film; introducing an impurity into the semiconductor film using the gate electrode as a mask; and irradiating the semiconductor film with ultraviolet light having a wavelength of 350 nm or less in an atmosphere including nitrogen hydride while heating treatment is performed at 300° C. or higher.
Claim 26
Dependent Claim
12 words
The method of claim 21 wherein the semiconductor film is non-single crystalline.
Claim 27
Dependent Claim
12 words
The method of claim 21 wherein the semiconductor film is single crystalline.
Claim 28
Dependent Claim
16 words
The method of claim 21 wherein the heating treatment is performed at 600° C. or lower.
Claim 29
Independent Claim
73 words
A method for producing a thin film transistor comprising the steps of: forming an amorphous silicon film on a substrate having an insulating surface; crystallizing the amorphous silicon film; forming a gate electrode on the crystallized silicon film through a gate insulating film; introducing an impurity into the crystallized silicon film using the gate electrode as a mask; and performing heating treatment in an atmosphere including nitrogen oxide while ultraviolet light is irradiated.
Claim 30
Independent Claim
73 words
A method for producing a thin film transistor comprising the steps of: forming an amorphous silicon film on a substrate having an insulating surface; crystallizing the amorphous silicon film; forming a gate electrode on the crystallized silicon film through a gate insulating film; introducing an impurity into the crystallized silicon film using the gate electrode as a mask; and performing heating treatment in an atmosphere including nitrogen oxide while ultraviolet light is irradiated.
Claim 31
Independent Claim
71 words
A method for producing a thin film transistor comprising the steps of: forming a silicon film on a substrate having an insulating surface; crystallizing the silicon film; forming a gate electrode on the crystallized silicon film through a gate insulating film; introducing an impurity into the crystallized silicon film using the gate electrode as a mask; and performing heating treatment in an atmosphere including nitrogen hydride while ultraviolet light is irradiated.
Claim 32
Independent Claim
71 words
A method for producing a thin film transistor comprising the steps of: forming a silicon film on a substrate having an insulating surface; crystallizing the silicon film; forming a gate electrode on the crystallized silicon film through a gate insulating film; introducing an impurity into the crystallized silicon film using the gate electrode as a mask; and performing heating treatment in an atmosphere including nitrogen hydride while ultraviolet light is irradiated.
Claim 33
Dependent Claim
12 words
The method of claim 26 wherein the silicon film is non-single crystalline.
Claim 34
Dependent Claim
22 words
The method of claim 26 wherein the nitrogen oxide includes one of N 2 O, NO, NO 2 and NO x (0.5<x<2).
Claim 35
Dependent Claim
12 words
The method of claim 26 wherein the atmosphere further includes nitrogen hydride.
Claim 36
Dependent Claim
23 words
The method of claim 29 wherein the nitrogen hydride includes one of NH 3 , N 2 H 4 , and NHx (1<x<3).
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1999-12-24 | 2000-06-24 | 2000-12-24 | $2000.00 | Window Closed / Lapsed |
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