US5923997A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-06-17
•
Granted: 1999-07-13
•
Expires: 2017-06-17
Abstract
Abstract One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600° C. or less. The crystallization develops from a region where the element has been introduced in a direction parallel to a substrate. An active region of a semiconductor device is formed in a portion of the crystallized semiconductor layer in such a manner that the relation between the crystal growth direction and the direction in which the electric current of the device is selected in accordance with a desired mobility of the active region.
Inventors
- 👤 Akiharu Mitanaga
- 👤 Hisashi Ohtani
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
128 words
A method for manufacturing a semiconductor device comprising the steps of: forming a non-single crystalline semiconductor layer comprising silicon on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; and forming an active region of said semiconductor device within a portion of said semiconductor layer after said crystallizing; wherein said portion of the semiconductor layer includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of said device is to be passed.
Claim 2
Independent Claim
128 words
A method for manufacturing a semiconductor device comprising the steps of: forming a non-single crystalline semiconductor layer comprising silicon on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; and forming an active region of said semiconductor device within a portion of said semiconductor layer after said crystallizing; wherein said portion of the semiconductor layer includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of said device is to be passed.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein said crystals are in the form of a column or needle.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein a concentration of said element in said channel semiconductor layer is in the range of 2×10 17 to 2×10 19 atoms/cm 3 .
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein said semiconductor device is a TFT forming a driver for a peripheral circuit of an active type liquid crystal display.
Claim 6
Independent Claim
139 words
A method for manufacturing a semiconductor device comprising the steps of: forming a non-single crystalline semiconductor layer comprising silicon on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; recrystallizing said semiconductor layer by using light after said heat crystallizing; and forming an active region of said semiconductor device within a portion of said semiconductor layer after said recrystallizing; wherein said portion of the semiconductor layer includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of said device is to be passed.
Claim 7
Independent Claim
139 words
A method for manufacturing a semiconductor device comprising the steps of: forming a non-single crystalline semiconductor layer comprising silicon on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; recrystallizing said semiconductor layer by using light after said heat crystallizing; and forming an active region of said semiconductor device within a portion of said semiconductor layer after said recrystallizing; wherein said portion of the semiconductor layer includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of said device is to be passed.
Claim 8
Dependent Claim
17 words
The method of claim 5 wherein said crystals are in the form of a column or needle.
Claim 9
Dependent Claim
29 words
The method of claim 5 wherein a concentration of said material in said channel semiconductor layer is in the range of 2×10 17 to 2×10 19 atoms/cm 3 .
Claim 10
Dependent Claim
13 words
The method of claim 5 wherein said light is emitted from a lamp.
Claim 11
Dependent Claim
12 words
The method of claim 5 wherein said light is a laser light.
Claim 12
Independent Claim
164 words
A method for manufacturing at least first and second semiconductor devices comprising the steps of: forming a non-single crystalline semiconductor layer comprising silicon on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; and patterning said semiconductor layer into at least first and second active regions after said heat crystallizing; wherein said first active region includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of the first semiconductor device is to be passed, wherein said second active region includes at least one grain boundary extending in a direction substantially perpendicular to a direction in which an electric current of the second semiconductor device is to be passed.
Claim 13
Independent Claim
164 words
A method for manufacturing at least first and second semiconductor devices comprising the steps of: forming a non-single crystalline semiconductor layer comprising silicon on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; and patterning said semiconductor layer into at least first and second active regions after said heat crystallizing; wherein said first active region includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of the first semiconductor device is to be passed, wherein said second active region includes at least one grain boundary extending in a direction substantially perpendicular to a direction in which an electric current of the second semiconductor device is to be passed.
Claim 14
Dependent Claim
17 words
The method of claim 10 wherein said crystals are in the form of a column or needle.
Claim 15
Dependent Claim
29 words
The method of claim 10 wherein a concentration of said material in said channel semiconductor layer is in the range of 2×10 17 to 2×10 19 atoms/cm 3 .
Claim 16
Dependent Claim
27 words
The method of claim 10 wherein said first semiconductor device is a TFT forming a driver for a peripheral circuit of an active type liquid crystal display.
Claim 17
Dependent Claim
22 words
The method of claim 10 wherein said second semiconductor device is a TFT for pixels of an active type liquid crystal display.
Claim 18
Dependent Claim
24 words
The method of claim 10 wherein said second semiconductor layer is crystallized by said heating perpendicularly to said surface in said second active region.
Claim 19
Independent Claim
174 words
A method for manufacturing at least first and second semiconductor devices comprising the steps of: forming a non-single crystalline semiconductor layer on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; recrystallizing said semiconductor layer by using light after said heat crystallizing; and then patterning said semiconductor layer into at least first and second active regions after said heat crystallizing; wherein said first active region includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of the first semiconductor device is to be passed, wherein said second active region includes at least one grain boundary extending in a direction substantially perpendicular to a direction in which an electric current of the second semiconductor device is to be passed.
Claim 20
Independent Claim
174 words
A method for manufacturing at least first and second semiconductor devices comprising the steps of: forming a non-single crystalline semiconductor layer on a surface; introducing an element selected from the group consisting of B, Al, Ga, In, Tl, Sc, Y, Lanthanide series elements, C, Ge, Sn, Pb, Ti, Zr, Hf, N, P, As, Sb, Bi, V, Nb, Zn and Ta into at least a portion of said semiconductor layer; heat crystallizing said semiconductor layer after said introducing; recrystallizing said semiconductor layer by using light after said heat crystallizing; and then patterning said semiconductor layer into at least first and second active regions after said heat crystallizing; wherein said first active region includes at least one grain boundary extending in a direction substantially parallel with a direction in which an electric current of the first semiconductor device is to be passed, wherein said second active region includes at least one grain boundary extending in a direction substantially perpendicular to a direction in which an electric current of the second semiconductor device is to be passed.
Claim 21
Dependent Claim
17 words
The method of claim 16 wherein said crystals are in the form of a column or needle.
Claim 22
Dependent Claim
29 words
The method of claim 16 wherein a concentration of said material in said channel semiconductor layer is in the range of 2×10 17 to 2×10 19 atoms/cm 3 .
Claim 23
Dependent Claim
13 words
The method of claim 16 wherein said light is emitted from a lamp.
Claim 24
Dependent Claim
12 words
The method of claim 16 wherein said light is a laser light.
Claim 25
Dependent Claim
23 words
The method of claim 16 wherein said semiconductor layer is crystallized by said heating perpendicularly to said surface in said second active region.
References Cited (Backward Citations)
US4068020A
Cited
US5142344A
Cited
US5315132A
Cited
GB2171844A
Cited
US4868014A
Cited
US4755865A
Cited
JPH02140915A
Cited
US5531182A
Cited
US5242507A
Cited
US5278093A
Cited
US5252507A
Cited
US5318919A
Cited
US5147826A
Cited
JPH04139728A
Cited
US5266816A
Cited
US5485019A
Cited
US5491107A
Cited
US5275851A
Cited
US5481121A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-12 | 2003-01-11 | 2003-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-12 | 2007-01-11 | 2007-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-12 | 2011-01-11 | 2011-07-13 | $7700.00 | Window Closed / Lapsed |