US4868014A
Expired / Lapsed
US
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Method for forming thin film multi-layer structure member
Assignee: Canon Inc
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Filing: 1987-01-13
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Granted: 1989-09-19
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Expires: 2007-01-13
Abstract
Abstract A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
Inventors
- 👤 Masahiro Kanai
- 👤 Masaaki Hirooka
- 👤 Jun-Ichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:57
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235; H10D30/0321; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
194 words
A method for forming a thin film multi-layer structure member having at least one semiconductor thin film controlled in valence electron or one semiconductor thin film regulated in band gap, which comprises: energizing a heat-generating member provided in a film-forming space housing a substrate to generate heat; said heat-generating member comprising a metal or alloy of a transition metal; bringing a gaseous starting material (A) for deposited film formation and a gaseous compound (B) into contact with the heat-generating member under heat generating state to cause a catalytic thermal dissociation reaction to thereby form a precursor (X); said starting material (A) containing hydrogen or a halogen; said compound (b) containing an element capable of being an electron controller or a band gap regulator; and forming on said substrate a deposited thin film from said precursor (X); introducing a gaseous starting material (A) for deposited film formation and a gaseous halogenic oxidizing agent into a reaction space to effect an oxidation reaction therebetween to thereby form a plurality of precursors including precursors in an excited state; and forming on said substrate in said film-forming space a thin film from at least one of said precursors.
Claim 2
Independent Claim
194 words
A method for forming a thin film multi-layer structure member having at least one semiconductor thin film controlled in valence electron or one semiconductor thin film regulated in band gap, which comprises: energizing a heat-generating member provided in a film-forming space housing a substrate to generate heat; said heat-generating member comprising a metal or alloy of a transition metal; bringing a gaseous starting material (A) for deposited film formation and a gaseous compound (B) into contact with the heat-generating member under heat generating state to cause a catalytic thermal dissociation reaction to thereby form a precursor (X); said starting material (A) containing hydrogen or a halogen; said compound (b) containing an element capable of being an electron controller or a band gap regulator; and forming on said substrate a deposited thin film from said precursor (X); introducing a gaseous starting material (A) for deposited film formation and a gaseous halogenic oxidizing agent into a reaction space to effect an oxidation reaction therebetween to thereby form a plurality of precursors including precursors in an excited state; and forming on said substrate in said film-forming space a thin film from at least one of said precursors.
Claim 3
Dependent Claim
27 words
The method according to claim 1, wherein the gaseous starting material (a) is selected from chain silane compounds, cyclic silane compounds, chain germanium compounds and hydrogenated tin.
Claim 4
Dependent Claim
27 words
The method according to claim 1, wherein the gaseous halogenic oxidizing agent is selected from F 2 , Cl 2 , Br 2 and I 2 .
Claim 5
Dependent Claim
22 words
The method according to claim 1, wherein the gaseous halogenic oxidizing agent is selected from fluorine, chlorine and bromine under nascent state.
Claim 6
Dependent Claim
34 words
The method according to claim 1, wherein the ratio of the amount of the gaseous starting material (a) and the amount of the gaseous halogenic oxidizing agent introduced into the reaction space is 1/20-100/1.
Claim 7
Dependent Claim
21 words
The method according to claim 1, wherein the film forming space and the reaction space is one and the same space.
Claim 8
Dependent Claim
35 words
The method according to claim 1, wherein the transition metal is selected from among Ti, Nb, V, Cr, Mo, W, Fe, Zr, Hf, Ta, Ni, Co, Rh, Pt, Pd, Au, Mn, Ag, Zn and CD.
Claim 9
Dependent Claim
17 words
The method according to claim 1, wherein the alloy of the transition metal is Pd-Ag or Ni-Cr.
Claim 10
Dependent Claim
333 words
The method according to claim 1, wherein the starting material (A) is selected from (a) SiF 4 , (SiF 2 ) 5 , (SiF 2 ) 6 , (SiF 2 ) 4 , Si 2 F 6 . Si 3 F 8 , SiHF 3 , SiH 2 F 2 , SiCl 4 , (SiCl 2 ) 5 , SiBr 4 , (SiBr 2 ) 5 , Si 2 Cl 6 , Si 2 Br 6 , SiHCl 3 , SiH 2 Cl 2 , SiHBr 3 , SiHl 3 , Si 2 Cl 3 F 3 , Si 2 H 3 F 3 , Si 2 H 2 F 4 , Si 2 H 3 Cl 3 and Si 2 H 2 Cl 4 ; (b) CF 4 , (CF 2 ) 5 , (CF 2 ) 6 , (CF 2 ) 4 , C 2 F 6 , C 3 F 8 , CHF 3 , CH 2 F 2 , CCl 4 , (CCl 2 ) 5 , CBr 4 , (CBr 2 ) 5 , C 2 Cl 6 , C 2 Br 6 , CHCl 3 , CH 2 Cl 2 , CHI 3 , CH 2 I 2 , C 2 Cl 3 F 3 , C 2 H 3 F 3 and C 2 H 2 F 4 ; and (c) GeH 4 , Ge 2 F 6 , GeF 4 , (GeF 2 ) 5 , (GeF 2 ) 6 , (GeF 2 ) 4 , Ge 2 F 6 , Ge 3 F 8 , GeHF 3 , GeH 2 F 2 , GeCl 4 , (GeCl 2 ) 5 , GeBr 4 , GeBr 2 ) 5 , Ge 2 Cl 6 , Ge 2 Br 6 , GeHCl 3 , GeH 2 Cl 2 , GeHBr 3 , GeHI 3 , Ge 2 Cl 3 F 3 , Ge 2 H 3 F 3 and Ge 2 H 2 F 4 .
Claim 11
Dependent Claim
224 words
The method according to claim 1, wherein the compound (B) is selected from (d) PH 3 , P 2 H 4 , PF 3 , PF 5 , PCl 3 , AsH 3 , AsF 3 , AsF 5 , AsCl 3 , SbH 3 , SbF 5 , BF 3 , BCl 3 , BBr 3 , B 2 H 6 , B 4 H 10 , B 5 H 9 , B 5 H 11 , B 6 H 10 and B 6 H 12 ; (e) CF 4 , (CF 2 ) 5 , (CF 2 ) 6 , (CF 2 ) 4 , C 2 F 6 , C 3 F 8 , CHF 3 , CH 2 F 2 , CCl 4 , (CCl 2 ) 5 , CBr 4 , (CBr 2 ) 5 . C 2 C 16 , C 2 Br 6 , CHCl 3 , CH 2 Cl 2 , CHI 3 , CH 2 I 2 , C 2 Cl 3 F 3 , C 2 H 3 F 3 and C 2 H 2 F 4 ; (f) O 2 , CO 2 , NO, NO 2 , N 2 O, O 3 , CO, H 2 O , CH 3 OH and CH 3 CH 2 OH; and (g) SnH 4 .
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