EP0486019A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for forming single crystal layer
Assignee: Canon Inc
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Filing: 1991-11-14
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Granted: —
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Expires: 2011-11-14
Abstract
Abstract A crystal forming method comprises disposing, on a surface of a substrate or in recessed portion formed in the substrate having a surface with a low nucleation density, primary seed having a sufficient small volume to singly aggregate and a rectangular prismatic or cubic shape in which all the sides and the bottom are surrounded by an insulator in contact therewith; performing heat treatment for aggregating the primary seed to form monocrystalline seed crystal having controlled plane orientation and in-plane orientation; and selectively growing monocrystal by crystal growth treatment using the seed crystal as starting point.
Inventors
- 👤 Kenji Yamagata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 15:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/276; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
96 words
A crystal forming method comprising disposing, on a surface of a substrate or in recessed portion formed in said substrate having a surface with a low nucleation density, primary seed having a sufficient small volume to singly aggregate and a rectangular prismatic or cubic shape in which all the sides and the bottom are surrounded by an insulator in contact therewith; performing heat treatment for aggregating said primary seed to form monocrystalline seed crystal having controlled plane orientation and in-plane orientation; and selectively growing monocrystal by crystal growth treatment using said seed crystal as starting point.
Claim 2
Dependent Claim
21 words
A crystal forming method according to Claim 1, wherein said surface with a low nucleation density is an amorphous insulating surface.
Claim 3
Dependent Claim
25 words
A crystal forming method according to Claim 1, wherein the temperature of said heat treatment is lower than the melting point of said primary seed.
Claim 4
Dependent Claim
22 words
A crystal forming method according to Claim 1, wherein said primary seed is subjected to heat treatment in an atmosphere of hydrogen.
Claim 5
Dependent Claim
99 words
A crystal forming method comprising disposing monocrystalline seed crystal on a substrate, and growing monocrystal using as starting point said seed crystal, wherein recessed portion having at least an angular portion where three surfaces comprising the bottom and two sides vertically contact with each other is formed in a surface of said substrate, a primary seed is disposed in said angular portion so as to contact with said three surfaces and is subjected to heat treatment for singly aggregating said primary seed to form monocrystalline seed crystal, and monocrystal is grown using said monocrystalline seed crystal as starting point.
Claim 6
Dependent Claim
21 words
A crystal forming method according to Claim 5, wherein said substrate has at least a surface with a low nucleation density.
Claim 7
Dependent Claim
20 words
A crystal forming method according to Claim 5, wherein said substrate has at least a surface comprising an amorphous insulator.
Claim 8
Dependent Claim
25 words
A crystal forming method according to Claim 5, wherein the temperature of said heat treatment is lower than the melting point of said primary seed.
Claim 9
Dependent Claim
19 words
A crystal forming method according to Claim 5, wherein said heat treatment is performed in an atmosphere of hydrogen.
Claim 10
Dependent Claim
104 words
A crystal forming method comprising disposing, on a surface of a substrate or in recessed portion formed in said substrate having a surface with a low nucleation density, a primary seed having a rectangular prismatic or cubic shape in which all the surfaces are surrounded by an insulator in contact therewith, melting and then solidifying said primary seed to form monocrystal having controlled plane orientation and in-plane orientation, partially removing the insulator covering said monocrystal to expose the surface of said monocrystal which are used as a seed crystal, performing crystal growth treatment for selectively forming monocrystal using said seed crystal as starting point.
Claim 11
Dependent Claim
91 words
A crystal forming method comprising disposing monocrystalline seed crystal on a substrate and growing monocrystal using said seed crystal as starting point, wherein recessed portion having at least an angular portion where three surfaces comprising a bottom and two sides vertically contact with each other is formed in the surface of said substrate, a primary seed is disposed in said angular portion so as to contact with said three surfaces and melted and than solidified to form monocrystalline seed crystal, and monocrystal is grown using said seed crystal as starting point.
Claim 12
Dependent Claim
20 words
crystal forming method according to Claim 11, wherein said substrate has at least a surface with a low nucleation density.
Claim 13
Dependent Claim
20 words
A crystal forming method according to Claim 11, wherein said substrate has at least a surface comprising an amorphous insulator.
References Cited (Backward Citations)
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