US6172671B1
Expired / Lapsed
US
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Active matrix type display device and fabrication method of the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1999-06-03
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Granted: 2001-01-09
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Expires: 2019-06-03
Abstract
Abstract There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
Inventors
- 👤 Tsukasa Shibuya
- 👤 Atsushi Yoshinouchi
- 👤 Hongyong Zhang
- 👤 Akira Takenouchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:56
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/136286; G02F1/1368; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D86/00; H10D86/01; H10D86/021; H10D86/0231; H10D86/40; H10D86/441; H10D86/60
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
192 words
An active matrix type display comprising: a pixel matrix portion provided on a substrate, said pixel matrix portion comprising an N-channel type thin film transistor having: a channel forming region; source and drain regions being high concentration impurity regions with said channel forming regions interposed therebetween; and impurity regions whose concentration is lower than that of said source and drain regions, said impurity regions provided between a channel region and said source region and between said channel region and said drain region, respectively, wherein lengths of said impurity regions are the same each other; and a peripheral driving circuit portion provided on said substrate, comprising: an N-channel type thin film transistor having: source and drain regions which are high concentration impurity regions; and impurity regions whose concentration is lower than said source and drain regions provided between a channel region and said source region and between said channel region and said drain region, respectively, so that the length of one of impurity regions on the drain side is larger than the other of impurity regions on the source side; and a P-channel type thin film transistor having no low concentration impurity region.
Claim 2
Dependent Claim
192 words
An active matrix type display comprising: a pixel matrix portion provided on a substrate, said pixel matrix portion comprising an N-channel type thin film transistor having: a channel forming region; source and drain regions being high concentration impurity regions with said channel forming regions interposed therebetween; and impurity regions whose concentration is lower than that of said source and drain regions, said impurity regions provided between a channel region and said source region and between said channel region and said drain region, respectively, wherein lengths of said impurity regions are the same each other; and a peripheral driving circuit portion provided on said substrate, comprising: an N-channel type thin film transistor having: source and drain regions which are high concentration impurity regions; and impurity regions whose concentration is lower than said source and drain regions provided between a channel region and said source region and between said channel region and said drain region, respectively, so that the length of one of impurity regions on the drain side is larger than the other of impurity regions on the source side; and a P-channel type thin film transistor having no low concentration impurity region.
Claim 3
Dependent Claim
30 words
A device according to claim 1 wherein the length is defined as what is in the direction along a moving path of carriers in each of said thin film transistors.
Claim 4
Dependent Claim
27 words
A device according to claim 1 wherein said peripheral driving circuit include a driver circuit, a shift register circuit, a data processing circuit and a memory circuit.
Claim 5
Dependent Claim
27 words
A device according to claim 1 wherein said substrate is selected from the group consisting of a glass substrate, a quartz substrate, and an alumina glass substrate.
Claim 6
Dependent Claim
18 words
A device according to claim 1 wherein said thin film transistors are top gate type thin film transistors.
Claim 7
Dependent Claim
191 words
An active matrix type display comprising: a pixel matrix portion, on a substrate, comprising at least one N-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions, wherein length of said pair of low concentration impurity regions are the same each other, and a peripheral driving circuit portion on said substrate, comprising at least one N-channel type thin film transistor and at least one P-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions disposed between said channel region and said source region and between said channel region and said drain region, respectively, wherein lengths of said pair of low concentration impurity regions are different from each other, and said P-channel type thin film transistor comprising an active layer having a channel region, a source region, and a drain region, wherein said P-channel type thin film transistor does not include low concentration impurity regions therein.
Claim 8
Dependent Claim
191 words
An active matrix type display comprising: a pixel matrix portion, on a substrate, comprising at least one N-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions, wherein length of said pair of low concentration impurity regions are the same each other, and a peripheral driving circuit portion on said substrate, comprising at least one N-channel type thin film transistor and at least one P-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions disposed between said channel region and said source region and between said channel region and said drain region, respectively, wherein lengths of said pair of low concentration impurity regions are different from each other, and said P-channel type thin film transistor comprising an active layer having a channel region, a source region, and a drain region, wherein said P-channel type thin film transistor does not include low concentration impurity regions therein.
Claim 9
Dependent Claim
30 words
A device according to claim 6 wherein the length is defined as what is in the direction along a moving path of carriers in each of said thin film transistors.
Claim 10
Dependent Claim
27 words
A device according to claim 6 wherein said peripheral driving circuit include a driver circuit, a shift register circuit, a data processing circuit and a memory circuit.
Claim 11
Dependent Claim
27 words
A device according to claim 6 wherein said substrate is selected from the group consisting of a glass substrate, a quartz substrate, and an alumina glass substrate.
Claim 12
Dependent Claim
18 words
A device according to claim 6 wherein said thin film transistors are top gate type thin film transistors.
Claim 13
Dependent Claim
162 words
An active matrix type display comprising: a pixel matrix portion, on a substrate, comprising at least one N-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions, wherein length of said pair of low concentration impurity regions are the same each other, and a peripheral driving circuit portion on said substrate, comprising at least one N-channel type thin film transistor and at least one P-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, a first low concentration impurity regions disposed between said channel region and said source region, and a second low concentration region disposed between said channel region and said drain region, wherein length of said second low concentration impurity region are larger than that of said first low concentration impurity region.
Claim 14
Dependent Claim
162 words
An active matrix type display comprising: a pixel matrix portion, on a substrate, comprising at least one N-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions, wherein length of said pair of low concentration impurity regions are the same each other, and a peripheral driving circuit portion on said substrate, comprising at least one N-channel type thin film transistor and at least one P-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, a first low concentration impurity regions disposed between said channel region and said source region, and a second low concentration region disposed between said channel region and said drain region, wherein length of said second low concentration impurity region are larger than that of said first low concentration impurity region.
Claim 15
Dependent Claim
30 words
A device according to claim 11 wherein the length is defined as what is in the direction along a moving path of carriers in each of said thin film transistors.
Claim 16
Dependent Claim
27 words
A device according to claim 11 wherein said peripheral driving circuit include a driver circuit, a shift register circuit, a data processing circuit and a memory circuit.
Claim 17
Dependent Claim
27 words
A device according to claim 11 wherein said substrate is selected from the group consisting of a glass substrate, a quartz substrate, and an alumina glass substrate.
Claim 18
Dependent Claim
18 words
A device according to claim 11 wherein said thin film transistors are top gate type thin film transistors.
Claim 19
Dependent Claim
154 words
An active matrix type display comprising: a pixel matrix portion, on a substrate, comprising at least one N-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions, wherein length of said pair of low concentration impurity regions are the same each other, and a peripheral driving circuit portion on said substrate, comprising at least one N-channel type thin film transistor and at least one P-channel type thin film transistor, said N-channel type thin film transistor comprising: an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions disposed between said channel region and said source region and between said channel region and said drain region, respectively, wherein lengths of said pair of low concentration impurity regions are different from each other.
Claim 20
Dependent Claim
154 words
An active matrix type display comprising: a pixel matrix portion, on a substrate, comprising at least one N-channel type thin film transistor, said N-channel type thin film transistor comprising an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions, wherein length of said pair of low concentration impurity regions are the same each other, and a peripheral driving circuit portion on said substrate, comprising at least one N-channel type thin film transistor and at least one P-channel type thin film transistor, said N-channel type thin film transistor comprising: an active layer having a channel region, a source region, a drain region, and a pair of low concentration impurity regions disposed between said channel region and said source region and between said channel region and said drain region, respectively, wherein lengths of said pair of low concentration impurity regions are different from each other.
Claim 21
Dependent Claim
30 words
A device according to claim 16 wherein the length is defined as what is in the direction along a moving path of carriers in each of said thin film transistors.
Claim 22
Dependent Claim
27 words
A device according to claim 16 wherein said peripheral driving circuit include a driver circuit, a shift register circuit, a data processing circuit and a memory circuit.
Claim 23
Dependent Claim
27 words
A device according to claim 16 wherein said substrate is selected from the group consisting of a glass substrate, a quartz substrate, and an alumina glass substrate.
Claim 24
Dependent Claim
18 words
A device according to claim 16 wherein said thin film transistors are top gate type thin film transistors.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-09 | 2004-07-10 | 2005-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-09 | 2008-07-10 | 2009-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-09 | 2012-07-10 | 2013-01-09 | $7700.00 | Window Closed / Lapsed |