Patent US6147000A successfully refreshed from Google Patents.
US6147000A
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US
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Method for forming low dielectric passivation of copper interconnects
Assignee: GlobalFoundries Inc
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Filing: 1999-01-05
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Granted: 2000-11-14
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Expires: 2019-01-05
Abstract
Abstract A Cu interconnect member is passivated by diffusing Sn, Ta or Cr atoms into its upper surface to form an intermetallic layer. Embodiments include depositing Cu by electroplating or electroless plating to fill a damascene opening in a dielectric layer, CMP, depositing a sacrificial layer of Sn, Ta or Cr on the planarized surface, heating to diffuse Sn, Ta or Cr into the upper surface of the deposited Cu to form a passivating intermetallic alloy layer, and removing any remaining sacrificial layer by CMP or etching.
Inventors
- 👤 Lu You
- 👤 Shekhar Pramanick
- 👤 Takeshi Nogami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/032; H10W20/033; H10W20/037; H10W20/047; H10W20/049
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
94 words
A method of manufacturing a semiconductor device, the method comprising sequentially: forming a copper (Cu) layer; chemical mechanical polishing an upper surface of the Cu layer; forming a sacrificial layer, comprising tin (Sn), tantalum (Ta), chromium (Cr) or an alloy thereof, on the planarized surface of the Cu layer; heating to diffuse Sn, Ta, and/or Cr into the upper surface of the Cu layer to form a passivating surface layer comprising Cu and Sn, Ta, and/or Cr leaving a remaining portion of the sacrificial layer; and removing the remaining portion of the sacrificial layer.
Claim 2
Independent Claim
94 words
A method of manufacturing a semiconductor device, the method comprising sequentially: forming a copper (Cu) layer; chemical mechanical polishing an upper surface of the Cu layer; forming a sacrificial layer, comprising tin (Sn), tantalum (Ta), chromium (Cr) or an alloy thereof, on the planarized surface of the Cu layer; heating to diffuse Sn, Ta, and/or Cr into the upper surface of the Cu layer to form a passivating surface layer comprising Cu and Sn, Ta, and/or Cr leaving a remaining portion of the sacrificial layer; and removing the remaining portion of the sacrificial layer.
Claim 3
Dependent Claim
23 words
The method according to claim 1, further comprising removing the remaining portion of the sacrificial layer on the passivating surface layer after heating.
Claim 4
Dependent Claim
21 words
The method according to claim 2, comprising removing the remaining portion of the sacrificial layer by chemical mechanical polishing or etching.
Claim 5
Dependent Claim
44 words
The method according to claim 2, comprising: depositing the sacrificial layer to a thickness of about 100 Å to about 1,000 Å; and heating to leave the remaining portion of the sacrificial layer having a thickness of about 50 Å to about 50 Å.
Claim 6
Dependent Claim
25 words
The method according to claim 1, comprising forming the Cu layer by: depositing a seedlayer; and electroplating or electroless plating the Cu on the seedlayer.
Claim 7
Dependent Claim
22 words
The method according to claim 1, wherein: the passivating surface layer comprises an intermetallic alloy of Cu and Sn, Ta or Cr.
Claim 8
Dependent Claim
39 words
The method according to claim 1, comprising heating to diffuse the Sn, Ta or Cr at a temperature of about 200° C. to about 400° C. for about 1 minute to about 10 minutes in an inert gaseous atmosphere.
Claim 9
Dependent Claim
17 words
The method according to claim 1, wherein the sacrificial layer consists essentially of Sn, Ta or Cr.
Claim 10
Dependent Claim
16 words
The method according to claim 8, wherein the sacrificial layer consists of Sn, Ta and Cr.
Claim 11
Dependent Claim
26 words
The method according to claim 1, comprising heating to diffuse the Sn, Ta or Cr at a temperature of about 200° C. to about 300° C.
Claim 12
Dependent Claim
58 words
The method according to claim 1, comprising: forming a dielectric layer overlying a substrate; forming an opening in the dielectric layer; depositing the Cu layer in the opening and over the dielectric layer; and removing the remaining portion of the sacrificial layer beyond the opening by chemical mechanical polishing after heating to diffuse the Sn, Ta and/or Cr.
Claim 13
Dependent Claim
23 words
The method according to claim 11, comprising: forming a barrier layer in the opening and; depositing the Cu layer on the barrier layer.
Claim 14
Dependent Claim
25 words
The method according to claim 12, comprising: depositing a seedlayer on the barrier layer, and electroplating or electroless plating the Cu layer on the seedlayer.
Claim 15
Dependent Claim
21 words
The method according to claim 1, further comprising forming a metal interconnection in direct electrical contact with the passivation surface layer.
Claim 16
Independent Claim
68 words
A method of manufacturing a semiconductor device, the method comprising sequentially: forming a copper (Cu) layer; chemical mechanical polishing an upper surface of the Cu layer; forming a sacrificial layer, comprising tin (Sn) or an alloy thereof, on the planarized surface of the Cu layer; and heating to diffuse Sn into the upper surface of the Cu layer to form a passivating surface layer comprising Cu and Sn.
Claim 17
Independent Claim
68 words
A method of manufacturing a semiconductor device, the method comprising sequentially: forming a copper (Cu) layer; chemical mechanical polishing an upper surface of the Cu layer; forming a sacrificial layer, comprising tin (Sn) or an alloy thereof, on the planarized surface of the Cu layer; and heating to diffuse Sn into the upper surface of the Cu layer to form a passivating surface layer comprising Cu and Sn.
Claim 18
Dependent Claim
19 words
The method according to claim 15, wherein: the passivating surface layer comprises an intermetallic alloy of Cu and Sn.
Claim 19
Dependent Claim
33 words
The method according to claim 15, comprising heat treating at a temperature of about 200° C. to about 400° C. for about 1 minute to about 10 minutes in an inert gaseous environment.
Claim 20
Dependent Claim
20 words
The method according to claim 15, comprising removing any remaining sacrificial layer after heating by chemical mechanical polishing or etching.
Claim 21
Dependent Claim
38 words
The method according to claim 16, comprising: depositing the sacrificial layer to a thickness of about 100 Å to about 1,000 Å; and heating to leave a remaining sacrificial layer of about 50 Å to about 500 Å.
Claim 22
Dependent Claim
54 words
The method according to claim 15, comprising: forming a dielectric layer overlying a substrate; forming an opening in the dielectric layer; depositing the Cu layer in the opening and over the dielectric layer; and removing any portion of the sacrificial layer beyond the opening by chemical mechanical polishing after heating to diffuse the Sn.
Claim 23
Dependent Claim
21 words
The method according to claim 15, further comprising forming a metal interconnection in direct electrical contact with the passivation surface layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-14 | 2004-05-15 | 2004-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-14 | 2008-05-15 | 2008-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-14 | 2012-05-15 | 2012-11-14 | $7700.00 | Window Closed / Lapsed |