US6022808A
Expired / Lapsed
US
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Copper interconnect methodology for enhanced electromigration resistance
Assignee: GlobalFoundries Inc
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Filing: 1998-03-16
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Granted: 2000-02-08
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Expires: 2018-03-16
Abstract
Abstract Copper interconnects with enhanced electromigration are formed by filling a via/contact hole and/or trench in a dielectric layer with undoped Cu. A Cu layer containing a dopant element, such as Pd, Zr or Sn is deposited on the undoped Cu contact/via and/or line. Annealing is then conducted to diffuse the dopant element into the copper contact/via and/or line to improve its electromigration resistance. CMP is then performed.
Inventors
- 👤 Takeshi Nogami
- 👤 Shekhar Pramanick
- 👤 Dirk Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:52
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W20/01; H10W20/031; H10W20/056; H10W20/425
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
68 words
A method of manufacturing a semiconductor device, the method comprising: forming a contact/via hole and/or trench in a dielectric layer; depositing substantially undoped copper filling the hole and/or trench; depositing a layer of copper containing a dopant element on the undoped copper; and annealing to diffuse the dopant element into the copper filled contact/via hole and/or trench, thereby enhancing the electromigration resistance of the copper-filled hole or trench.
Claim 2
Independent Claim
68 words
A method of manufacturing a semiconductor device, the method comprising: forming a contact/via hole and/or trench in a dielectric layer; depositing substantially undoped copper filling the hole and/or trench; depositing a layer of copper containing a dopant element on the undoped copper; and annealing to diffuse the dopant element into the copper filled contact/via hole and/or trench, thereby enhancing the electromigration resistance of the copper-filled hole or trench.
Claim 3
Dependent Claim
33 words
The method of claim 1, further comprising planarizing by chemical mechanical polishing after annealing, so that the copper filled hole and/or trench is substantially coplanar with an upper surface of the dielectric layer.
Claim 4
Dependent Claim
20 words
The method according to claim 2, comprising depositing the undoped copper layer in a contact/via hole to form a contact/via.
Claim 5
Dependent Claim
19 words
The method according to claim 2, comprising depositing the undoped copper in a trench to form an interconnect line.
Claim 6
Dependent Claim
19 words
The method according to claim 1, comprising depositing the undoped copper by chemical vapor deposition, electroplating or electroless plating.
Claim 7
Dependent Claim
30 words
The method according to claim 1, comprising initially depositing a barrier layer on an upper surface of the surface of the dielectric layer and lining the contact/via hole and/or trench.
Claim 8
Dependent Claim
25 words
The method according to claim 6, comprising; depositing a seed layer on the barrier layer; and depositing the undoped copper by electroplating or electroless plating.
Claim 9
Dependent Claim
23 words
The method according to claim 1, comprising depositing the doped copper layer at a thickness of about 1,000 Å to about one micron.
Claim 10
Dependent Claim
23 words
The method according to claim 8, comprising depositing the doped copper layer at a thickness of about 3,000 Å to about 6,000 Å.
Claim 11
Dependent Claim
27 words
The method according to claim 1, comprising annealing at a temperature of about 300° C. to about 500° C. for about 10 minutes to about 2 hours.
Claim 12
Dependent Claim
25 words
The method according to claim 10, comprising annealing at a temperature of about 350° to about 450° for about 30 minutes to about 1 hour.
Claim 13
Dependent Claim
13 words
The method according to claim 1, comprising sputter depositing the doped copper layer.
Claim 14
Dependent Claim
23 words
The method according to claim 1, wherein the doped copper layer contains about 0.5 to about 12% by weight of the dopant element.
Claim 15
Dependent Claim
25 words
The method according to claim 13, wherein the doped cop per layer c ontains about 0.5 to about 6% by weight of the dopant element.
Claim 16
Dependent Claim
30 words
The method according to claim 1, comprising annealing is conducted so that the copper filled hole and/or trench contains about 3% to about 6% by weight of the dopant element.
Claim 17
Dependent Claim
28 words
The method according to claim 15, comprising annealing so that the copper filled hole and/or trench contains about 0.5 to about 2% by weight of the dopant element.
Claim 18
Dependent Claim
17 words
The method according to claim 1, wherein the dopant is palladium, zirconium, tin, magnesium, chromium or tantalum.
Claim 19
Dependent Claim
34 words
The method according to claim 17, wherein the dopant is tin and, after annealing, is present in the copper filled hole and/or trench in an amount of about 0.3 to about 1% by weight.
Claim 20
Independent Claim
163 words
A method of manufacturing a semiconductor device, the method comprising sequentially; forming a contact/via hole and/or trench in a dielectric layer; depositing a barrier layer on an upper surface of the dielectric layer lining the hole and/or trench; depositing substantially undoped copper by chemical vapor deposition, electroplating or electroless plating, filling the hole and/or trench; sputter depositing a layer of copper containing about 0.5 to about 12 weight percent of a dopant element at a thickness of about 1000 Å to about 1 micron on the undoped copper; annealing at a temperature of about 300° C. to about 500° C. for about thirty minutes to about two hours to diffuse the dopant element into the copper filled hole and/or trench, so that the copper filled hole and/or trench contains about 0.3% to about 6 weight percent of the dopant element; and chemical mechanical polishing so that the copper filled hole and/or trench is substantially coplanar with the upper surface of the dielectric layer.
Claim 21
Independent Claim
163 words
A method of manufacturing a semiconductor device, the method comprising sequentially; forming a contact/via hole and/or trench in a dielectric layer; depositing a barrier layer on an upper surface of the dielectric layer lining the hole and/or trench; depositing substantially undoped copper by chemical vapor deposition, electroplating or electroless plating, filling the hole and/or trench; sputter depositing a layer of copper containing about 0.5 to about 12 weight percent of a dopant element at a thickness of about 1000 Å to about 1 micron on the undoped copper; annealing at a temperature of about 300° C. to about 500° C. for about thirty minutes to about two hours to diffuse the dopant element into the copper filled hole and/or trench, so that the copper filled hole and/or trench contains about 0.3% to about 6 weight percent of the dopant element; and chemical mechanical polishing so that the copper filled hole and/or trench is substantially coplanar with the upper surface of the dielectric layer.
Claim 22
Dependent Claim
18 words
The method according to claim 19, wherein the dopant element comprises palladium, zirconium, tin, magnesium, chromium or tantalum.
References Cited (Backward Citations)
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