US5744376A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing copper interconnect with top barrier layer
Assignee: GlobalFoundries Singapore Pte Ltd
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Filing: 1996-04-08
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Granted: 1998-04-28
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Expires: 2016-04-08
Abstract
Abstract A structure and method for making copper interconnections in an integrated circuit are described. The structure is a damascene copper connector whose upper surface is coplanar with the upper surface of the insulating layer in which it is embedded. Out-diffusion of copper from the connector is prevented by two barrier layers. One is located at the interface between the connector and the insulating layer ,while the second barrier is an insulating layer which covers the upper surface of the connector. The damascene process involves filling a trench in the surface of the insulator with copper and then removing the excess by chem.-mech. polishing. Since photoresist is never in direct contact with the copper the problem of copper oxidation during resist ashing has been effectively eliminated.
Inventors
- 👤 Lap Chan
- 👤 Jia Zhen Zheng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/031; H10W20/032; H10W20/033; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
168 words
A method for manufacturing a copper connector in an integrated circuit comprising: (a) providing a silicon substrate; (b) depositing a first insulating layer on said silicon substrate; (c) patterning and then etching said first insulating layer to form a trench therein; (d) depositing a first barrier layer on said first insulating layer and on all walls of said trench; (e) depositing a copper layer on said first barrier layer so as to more than fill said trench; (f) removing said copper layer and said first barrier layer down to the level of said first insulating layer, thereby forming a damascene connector having an upper surface; (g) depositing a second barrier layer on said first insulating layer and said upper surface of said damascene connector; (h) depositing a second insulating layer on said second barrier layer; and (i) patterning and then etching said second insulating layer to form a via passing through said second insulating layer and said second barrier layer to said upper surface of the damascene connector.
Claim 2
Independent Claim
168 words
A method for manufacturing a copper connector in an integrated circuit comprising: (a) providing a silicon substrate; (b) depositing a first insulating layer on said silicon substrate; (c) patterning and then etching said first insulating layer to form a trench therein; (d) depositing a first barrier layer on said first insulating layer and on all walls of said trench; (e) depositing a copper layer on said first barrier layer so as to more than fill said trench; (f) removing said copper layer and said first barrier layer down to the level of said first insulating layer, thereby forming a damascene connector having an upper surface; (g) depositing a second barrier layer on said first insulating layer and said upper surface of said damascene connector; (h) depositing a second insulating layer on said second barrier layer; and (i) patterning and then etching said second insulating layer to form a via passing through said second insulating layer and said second barrier layer to said upper surface of the damascene connector.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said first insulating layer comprises silicon oxide or polyimide.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein said first insulating layer is deposited to a thickness between about 0.5 and 2 microns.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein the depth of said trench is between about 4,000 and 12,000 Angstroms.
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein said first barrier layer comprises material taken from the group consisting of titanium nitride, tungsten nitride, titanium tungstide, and tantalum nitride.
Claim 7
Dependent Claim
21 words
The method of claim 1 wherein said first barrier layer is deposited to a thickness between about 200 and 2,000 Angstroms.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein said copper layer is deposited by chemical vapor deposition or physical vapor deposition or electroplating.
Claim 9
Dependent Claim
17 words
The method of claim 1 wherein said copper layer is removed by chemical-mechanical polishing or blanket etch-back.
Claim 10
Dependent Claim
14 words
The method of claim 1 wherein said trench is etched by plasma dry etching.
Claim 11
Dependent Claim
14 words
The method of claim 1 wherein said via is etched by plasma dry etching.
Claim 12
Dependent Claim
15 words
The method of claim 1 wherein said second insulating layer comprises silicon oxide or polyimide.
Claim 13
Dependent Claim
21 words
The method of claim 1 wherein said second insulating layer is deposited to a thickness between about 0.5 and 2 microns.
Claim 14
Dependent Claim
23 words
The method of claim 1 wherein step (g) further comprises depositing the second barrier layer by chemical vapor deposition or physical vapor deposition.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-27 | 2001-10-27 | 2002-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-27 | 2005-10-27 | 2006-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-27 | 2009-10-27 | 2010-04-28 | $7700.00 | Window Closed / Lapsed |