US5539256A
Expired / Lapsed
US
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Semiconductor device having an interconnection of a laminate structure and a method for manufacturing the same
Assignee: NEC Electronics Corp
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Filing: 1995-02-23
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Granted: 1996-07-23
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Expires: 2015-02-23
Abstract
Abstract A metallic interconnection has a laminate structure including a Ti film, a TiN film, a Cu--Ti compound film and a Cu alloy film containing Cu and a small amount of other metallic elements, the films being consecutively formed on a SiO 2 film located on a semiconductor substrate. A W film covers the surface of the laminate structure. The Cu--Ti compound film is formed by sputtering a Ti and a Cu alloy targets followed by a subsequent heat treatment or by sputtering Cu--Ti alloy target and a subsequent heat treatment. The Cu--Ti compound film increases the adhesion force between the Cu alloy film and the TiN film while the W film protects the metallic interconnection against oxidation and corrosion.
Inventors
- 👤 Kaoru Mikagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 01:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
70 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film and a Cu alloy film including Cu and a minute amount of at least one metallic element selected from a group consisting of Ag, Sn and Sb, said films being consecutively formed at least on said insulating film.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film and a Cu alloy film including Cu and a minute amount of at least one metallic element selected from a group consisting of Ag, Sn and Sb, said films being consecutively formed at least on said insulating film.
Claim 3
Dependent Claim
30 words
A semiconductor device as defined in claim 1 wherein said metallic interconnection has a via-plug penetrating said insulating film and said via-plug forms an ohmic contact with said semiconductor substrate.
Claim 4
Dependent Claim
20 words
A semiconductor device as defined in claim 1 wherein said interconnection further includes a W film covering said laminate structure.
Claim 5
Dependent Claim
68 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film and a Cu alloy film including Cu and an amount between 0.01 and 0.5 wt. % of at least one metallic element other than Cu, said films being consecutively formed at least on said insulating film.
Claim 6
Dependent Claim
68 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film and a Cu alloy film including Cu and an amount between 0.01 and 0.5 wt. % of at least one metallic element other than Cu, said films being consecutively formed at least on said insulating film.
Claim 7
Dependent Claim
72 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film at an atomic ratio ranging between Cu:Ti=5:1 and Cu:Ti=1:2 and a Cu alloy film including Cu and a minute amount of at least one metallic element other than Cu, said films being consecutively formed at least on said insulating film.
Claim 8
Dependent Claim
72 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film at an atomic ratio ranging between Cu:Ti=5:1 and Cu:Ti=1:2 and a Cu alloy film including Cu and a minute amount of at least one metallic element other than Cu, said films being consecutively formed at least on said insulating film.
Claim 9
Dependent Claim
72 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film at an atomic ratio ranging between Cu:Ti=7:2 and Cu:Ti=1:2 and a Cu alloy film including Cu and a minute amount of at least one metallic element other than Cu, said films being consecutively formed at least on said insulating film.
Claim 10
Dependent Claim
72 words
A semiconductor device comprising: a semiconductor substrate; an insulating film overlying said substrate; and a metallic interconnection of a laminate structure including a Ti film, a TiN film, a Ti--Cu compound film at an atomic ratio ranging between Cu:Ti=7:2 and Cu:Ti=1:2 and a Cu alloy film including Cu and a minute amount of at least one metallic element other than Cu, said films being consecutively formed at least on said insulating film.
References Cited (Backward Citations)
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